JPS5934652A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS5934652A
JPS5934652A JP57144931A JP14493182A JPS5934652A JP S5934652 A JPS5934652 A JP S5934652A JP 57144931 A JP57144931 A JP 57144931A JP 14493182 A JP14493182 A JP 14493182A JP S5934652 A JPS5934652 A JP S5934652A
Authority
JP
Japan
Prior art keywords
thin film
film
island
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57144931A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0138376B2 (enrdf_load_stackoverflow
Inventor
Yoshiharu Nakao
中尾　▲よし▼治
Masao Nagatomo
長友　正男
Yoshikazu Obayashi
大林　由和
Shinichi Sato
真一 佐藤
Kazuo Mizuguchi
一男 水口
Masahiro Yoneda
昌弘 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57144931A priority Critical patent/JPS5934652A/ja
Publication of JPS5934652A publication Critical patent/JPS5934652A/ja
Publication of JPH0138376B2 publication Critical patent/JPH0138376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
JP57144931A 1982-08-20 1982-08-20 半導体集積回路装置の製造方法 Granted JPS5934652A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57144931A JPS5934652A (ja) 1982-08-20 1982-08-20 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57144931A JPS5934652A (ja) 1982-08-20 1982-08-20 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5934652A true JPS5934652A (ja) 1984-02-25
JPH0138376B2 JPH0138376B2 (enrdf_load_stackoverflow) 1989-08-14

Family

ID=15373527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57144931A Granted JPS5934652A (ja) 1982-08-20 1982-08-20 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5934652A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588737B1 (ko) 2004-12-30 2006-06-12 매그나칩 반도체 유한회사 반도체 장치 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588737B1 (ko) 2004-12-30 2006-06-12 매그나칩 반도체 유한회사 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
JPH0138376B2 (enrdf_load_stackoverflow) 1989-08-14

Similar Documents

Publication Publication Date Title
JPH11330245A (ja) 半導体装置のコンタクト形成方法
JPH09129622A (ja) 炭化ケイ素のエッチング方法
JPS61116834A (ja) 半導体基板にコンタクトを形成する方法
JPS5934652A (ja) 半導体集積回路装置の製造方法
JP2741175B2 (ja) 半導体素子の微細パターン形成方法
JPS61271839A (ja) パタ−ン形成方法
JPS5918858B2 (ja) ホトレジスト被膜の埋込方法
JP3151791B2 (ja) 限界寸法制御装置のモニタパターン及びその使用方法
JPH10125864A (ja) 半導体装置の製造方法
JPS5838939B2 (ja) 集積回路
JPH03276633A (ja) 半導体装置の製造方法
JPS61102039A (ja) 半導体基本にデバイスを製造する方法
JP2557906B2 (ja) 半導体装置の製造方法
JPH11354626A (ja) 半導体素子の素子分離方法及び半導体装置
JPH01244636A (ja) 半導体装置の製造方法
JPS5889861A (ja) 半導体装置およびその製造方法
JPH03184361A (ja) 半導体装置の製造方法
JPH0680664B2 (ja) 半導体装置の配線形成方法
JPS60261132A (ja) 半導体装置の製造方法
JPH0766298A (ja) 半導体装置の製造方法
JPH023926A (ja) 配線の形成方法
JPS60202954A (ja) 半導体装置の製造方法
JPS61166173A (ja) 薄膜トランジスタ装置
JPS6263435A (ja) 半導体装置の製造方法
JPS61119063A (ja) 半導体装置の製造方法