JPH0138376B2 - - Google Patents

Info

Publication number
JPH0138376B2
JPH0138376B2 JP57144931A JP14493182A JPH0138376B2 JP H0138376 B2 JPH0138376 B2 JP H0138376B2 JP 57144931 A JP57144931 A JP 57144931A JP 14493182 A JP14493182 A JP 14493182A JP H0138376 B2 JPH0138376 B2 JP H0138376B2
Authority
JP
Japan
Prior art keywords
thin film
island
etching
large number
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57144931A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5934652A (ja
Inventor
Kanji Nakao
Masao Nagatomo
Yoshikazu Oohayashi
Shinichi Sato
Kazuo Mizuguchi
Masahiro Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57144931A priority Critical patent/JPS5934652A/ja
Publication of JPS5934652A publication Critical patent/JPS5934652A/ja
Publication of JPH0138376B2 publication Critical patent/JPH0138376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
JP57144931A 1982-08-20 1982-08-20 半導体集積回路装置の製造方法 Granted JPS5934652A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57144931A JPS5934652A (ja) 1982-08-20 1982-08-20 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57144931A JPS5934652A (ja) 1982-08-20 1982-08-20 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5934652A JPS5934652A (ja) 1984-02-25
JPH0138376B2 true JPH0138376B2 (enrdf_load_stackoverflow) 1989-08-14

Family

ID=15373527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57144931A Granted JPS5934652A (ja) 1982-08-20 1982-08-20 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5934652A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588737B1 (ko) 2004-12-30 2006-06-12 매그나칩 반도체 유한회사 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
JPS5934652A (ja) 1984-02-25

Similar Documents

Publication Publication Date Title
JPH11330245A (ja) 半導体装置のコンタクト形成方法
JP2741175B2 (ja) 半導体素子の微細パターン形成方法
JPS6194366A (ja) 薄膜トランジスタ
JPH0138376B2 (enrdf_load_stackoverflow)
JPS6222463B2 (enrdf_load_stackoverflow)
JPS61271839A (ja) パタ−ン形成方法
JPH0736423B2 (ja) 半導体装置の製造方法
JPS5918858B2 (ja) ホトレジスト被膜の埋込方法
JPH10125864A (ja) 半導体装置の製造方法
JPS614233A (ja) 透明導電膜のエツチング方法
JPS63258020A (ja) 素子分離パタ−ンの形成方法
JP2570729B2 (ja) 半導体装置の製造方法
JP2597424B2 (ja) 半導体装置の製造方法
JPH05343347A (ja) 半導体装置の製造方法
KR100218727B1 (ko) 반도체 소자의 콘택홀 형성방법
KR100363298B1 (ko) 화학적 기계적 연마 방법을 이용한 측면형 전계 방출소자의 제조방법
KR930010113B1 (ko) Dram소자의 개패시터 및 그 제조방법
KR0172249B1 (ko) 반도체소자의 콘택홀 형성방법
JP2694777B2 (ja) 半導体装置の製造方法
JPH01244636A (ja) 半導体装置の製造方法
JPH0766288A (ja) 半導体装置およびその製造方法
JPS61248547A (ja) 半導体装置の製造方法
JPH01157555A (ja) 層間絶縁膜の形成方法
JPS6038854A (ja) 半導体装置の製造方法
JPH03184361A (ja) 半導体装置の製造方法