JPS5927543A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5927543A JPS5927543A JP13770582A JP13770582A JPS5927543A JP S5927543 A JPS5927543 A JP S5927543A JP 13770582 A JP13770582 A JP 13770582A JP 13770582 A JP13770582 A JP 13770582A JP S5927543 A JPS5927543 A JP S5927543A
- Authority
- JP
- Japan
- Prior art keywords
- film
- individual element
- element isolation
- silicon oxide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000003647 oxidation Effects 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- 238000002955 isolation Methods 0.000 claims description 42
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 22
- 239000012535 impurity Substances 0.000 abstract description 17
- 229910052681 coesite Inorganic materials 0.000 abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 76
- 238000009792 diffusion process Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 241000293849 Cordylanthus Species 0.000 description 6
- 235000000208 Solanum incanum Nutrition 0.000 description 2
- 244000302301 Solanum incanum Species 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13770582A JPS5927543A (ja) | 1982-08-06 | 1982-08-06 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13770582A JPS5927543A (ja) | 1982-08-06 | 1982-08-06 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5927543A true JPS5927543A (ja) | 1984-02-14 |
| JPS6242382B2 JPS6242382B2 (enrdf_load_stackoverflow) | 1987-09-08 |
Family
ID=15204888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13770582A Granted JPS5927543A (ja) | 1982-08-06 | 1982-08-06 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927543A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4622737A (en) * | 1984-09-25 | 1986-11-18 | Sgs-Ates Componeti Electtronici S.P.A. | Process for the fabrication of a nonvolatile memory cell with very small thin oxide area and cell |
| US4758530A (en) * | 1986-12-08 | 1988-07-19 | Delco Electronics Corporation | Doubly-self-aligned hole-within-a-hole structure in semiconductor fabrication involving a double LOCOS process aligned with sidewall spacers |
| JPH0172728U (enrdf_load_stackoverflow) * | 1987-11-04 | 1989-05-16 | ||
| JPH01143352A (ja) * | 1987-11-30 | 1989-06-05 | Nec Kyushu Ltd | 溝容量部を備えた半導体記憶装置 |
| US5116775A (en) * | 1986-06-18 | 1992-05-26 | Hitachi, Ltd. | Method of producing semiconductor memory device with buried barrier layer |
| US5128274A (en) * | 1989-08-01 | 1992-07-07 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor device having a LOCOS insulating film with at least two different thickness |
| US5498564A (en) * | 1994-08-03 | 1996-03-12 | International Business Machines Corporation | Structure and method for reducing parasitic leakage in a memory array with merged isolation and node trench construction |
| US5679600A (en) * | 1995-10-11 | 1997-10-21 | Micron Technology, Inc. | Double locos for submicron isolation |
-
1982
- 1982-08-06 JP JP13770582A patent/JPS5927543A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4622737A (en) * | 1984-09-25 | 1986-11-18 | Sgs-Ates Componeti Electtronici S.P.A. | Process for the fabrication of a nonvolatile memory cell with very small thin oxide area and cell |
| US5116775A (en) * | 1986-06-18 | 1992-05-26 | Hitachi, Ltd. | Method of producing semiconductor memory device with buried barrier layer |
| US4758530A (en) * | 1986-12-08 | 1988-07-19 | Delco Electronics Corporation | Doubly-self-aligned hole-within-a-hole structure in semiconductor fabrication involving a double LOCOS process aligned with sidewall spacers |
| JPH0172728U (enrdf_load_stackoverflow) * | 1987-11-04 | 1989-05-16 | ||
| JPH01143352A (ja) * | 1987-11-30 | 1989-06-05 | Nec Kyushu Ltd | 溝容量部を備えた半導体記憶装置 |
| US5128274A (en) * | 1989-08-01 | 1992-07-07 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor device having a LOCOS insulating film with at least two different thickness |
| US5498564A (en) * | 1994-08-03 | 1996-03-12 | International Business Machines Corporation | Structure and method for reducing parasitic leakage in a memory array with merged isolation and node trench construction |
| US5679600A (en) * | 1995-10-11 | 1997-10-21 | Micron Technology, Inc. | Double locos for submicron isolation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6242382B2 (enrdf_load_stackoverflow) | 1987-09-08 |
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