JPS59228783A - ＧａＡｓ半導体装置の製造方法 - Google Patents

ＧａＡｓ半導体装置の製造方法

Info

Publication number
JPS59228783A
JPS59228783A JP58104426A JP10442683A JPS59228783A JP S59228783 A JPS59228783 A JP S59228783A JP 58104426 A JP58104426 A JP 58104426A JP 10442683 A JP10442683 A JP 10442683A JP S59228783 A JPS59228783 A JP S59228783A
Authority
JP
Japan
Prior art keywords
active layer
gaas
semiconductor device
ion implantation
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58104426A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0478034B2 (enExample
Inventor
Katsuji Tara
多良　勝司
Shunji Ogata
緒方　俊司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58104426A priority Critical patent/JPS59228783A/ja
Publication of JPS59228783A publication Critical patent/JPS59228783A/ja
Publication of JPH0478034B2 publication Critical patent/JPH0478034B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
JP58104426A 1983-06-10 1983-06-10 ＧａＡｓ半導体装置の製造方法 Granted JPS59228783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58104426A JPS59228783A (ja) 1983-06-10 1983-06-10 ＧａＡｓ半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58104426A JPS59228783A (ja) 1983-06-10 1983-06-10 ＧａＡｓ半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59228783A true JPS59228783A (ja) 1984-12-22
JPH0478034B2 JPH0478034B2 (enExample) 1992-12-10

Family

ID=14380359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58104426A Granted JPS59228783A (ja) 1983-06-10 1983-06-10 ＧａＡｓ半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59228783A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237586A (ja) * 1987-03-26 1988-10-04 Agency Of Ind Science & Technol 微小ホ−ル素子の製造方法
JPH03240281A (ja) * 1990-02-19 1991-10-25 Asahi Chem Ind Co Ltd ＧａＡｓホール素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548927A (en) * 1978-10-04 1980-04-08 Mitsubishi Monsanto Chem Co Preparation of semiconductor element
JPS5732687A (en) * 1980-08-06 1982-02-22 Toshiba Corp Manufacture of magnetoelectric transducer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548927A (en) * 1978-10-04 1980-04-08 Mitsubishi Monsanto Chem Co Preparation of semiconductor element
JPS5732687A (en) * 1980-08-06 1982-02-22 Toshiba Corp Manufacture of magnetoelectric transducer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237586A (ja) * 1987-03-26 1988-10-04 Agency Of Ind Science & Technol 微小ホ−ル素子の製造方法
JPH03240281A (ja) * 1990-02-19 1991-10-25 Asahi Chem Ind Co Ltd ＧａＡｓホール素子

Also Published As

Publication number Publication date
JPH0478034B2 (enExample) 1992-12-10

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