JPS59217375A - 半導体機械−電気変換装置 - Google Patents

半導体機械−電気変換装置

Info

Publication number
JPS59217375A
JPS59217375A JP58091443A JP9144383A JPS59217375A JP S59217375 A JPS59217375 A JP S59217375A JP 58091443 A JP58091443 A JP 58091443A JP 9144383 A JP9144383 A JP 9144383A JP S59217375 A JPS59217375 A JP S59217375A
Authority
JP
Japan
Prior art keywords
strain gauge
single crystal
resistance
silicon single
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58091443A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367211B2 (en, 2012
Inventor
Susumu Sugiyama
進 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP58091443A priority Critical patent/JPS59217375A/ja
Priority to US06/613,968 priority patent/US4576052A/en
Priority to DE3419710A priority patent/DE3419710A1/de
Publication of JPS59217375A publication Critical patent/JPS59217375A/ja
Publication of JPH0367211B2 publication Critical patent/JPH0367211B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP58091443A 1983-05-26 1983-05-26 半導体機械−電気変換装置 Granted JPS59217375A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58091443A JPS59217375A (ja) 1983-05-26 1983-05-26 半導体機械−電気変換装置
US06/613,968 US4576052A (en) 1983-05-26 1984-05-24 Semiconductor transducer
DE3419710A DE3419710A1 (de) 1983-05-26 1984-05-26 Halbleiterwandler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58091443A JPS59217375A (ja) 1983-05-26 1983-05-26 半導体機械−電気変換装置

Publications (2)

Publication Number Publication Date
JPS59217375A true JPS59217375A (ja) 1984-12-07
JPH0367211B2 JPH0367211B2 (en, 2012) 1991-10-22

Family

ID=14026507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58091443A Granted JPS59217375A (ja) 1983-05-26 1983-05-26 半導体機械−電気変換装置

Country Status (3)

Country Link
US (1) US4576052A (en, 2012)
JP (1) JPS59217375A (en, 2012)
DE (1) DE3419710A1 (en, 2012)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108842U (en, 2012) * 1985-12-26 1987-07-11
JPS6323371A (ja) * 1986-07-16 1988-01-30 Nippon Denso Co Ltd 半導体歪検出器
US5042307A (en) * 1989-07-19 1991-08-27 Fuji Electric Co., Ltd. Amplifying compensation circuit for semiconductor
JPH05164635A (ja) * 1991-12-11 1993-06-29 Fujikura Ltd 半導体圧力センサの増幅補償回路
JP2007512534A (ja) * 2003-11-20 2007-05-17 ハネウェル・インターナショナル・インコーポレーテッド デジタル出力ｍｅｍｓ圧力センサおよび方法
WO2015072189A1 (ja) * 2013-11-14 2015-05-21 シャープ株式会社 圧力センサー、圧力センシングシステム、および圧力センサーの製造方法

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777826A (en) * 1985-06-20 1988-10-18 Rosemount Inc. Twin film strain gauge system
IT206726Z2 (it) * 1985-09-17 1987-10-01 Marelli Autronica Dispositivo misuratore di pressione
DE3616308C2 (de) * 1986-05-14 1995-09-21 Bosch Gmbh Robert Sensor
EP0262366A1 (de) * 1986-09-30 1988-04-06 Siemens Aktiengesellschaft Drucksensorelement
US4966039A (en) * 1988-04-21 1990-10-30 Marelli Autronica S.P.A. Electrical force and/or deformation sensor, particularly for use as a pressure sensor
US5036286A (en) * 1988-06-03 1991-07-30 The Research Corporation Of The University Of Hawaii Magnetic and electric force sensing method and apparatus
US4883992A (en) * 1988-09-06 1989-11-28 Delco Electronics Corporation Temperature compensated voltage generator
JPH0777266B2 (ja) * 1988-12-28 1995-08-16 株式会社豊田中央研究所 半導体歪み検出装置
US5135488A (en) * 1989-03-17 1992-08-04 Merit Medical Systems, Inc. System and method for monitoring, displaying and recording balloon catheter inflation data
US5184515A (en) * 1989-06-22 1993-02-09 Ic Sensors, Inc. Single diaphragm transducer with multiple sensing elements
DE3925177A1 (de) * 1989-07-27 1991-02-07 Siemens Ag Schaltungsanordnung zur temperaturstabilen verstaerkung einer differenzspannung
US5184520A (en) * 1989-10-18 1993-02-09 Ishida Scales Mfg. Co., Ltd. Load sensor
JPH03233334A (ja) * 1990-02-08 1991-10-17 Nec Corp 半導体圧力センサ
JPH0465643A (ja) * 1990-07-05 1992-03-02 Mitsubishi Electric Corp 半導体圧力センサ及びその製造方法
US5174014A (en) * 1990-07-27 1992-12-29 Data Instruments, Inc. Method of manufacturing pressure transducers
JPH04105369A (ja) * 1990-08-24 1992-04-07 Honda Motor Co Ltd 半導体センサ
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
US5279164A (en) * 1990-12-18 1994-01-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor with improved temperature compensation
JP2643029B2 (ja) * 1990-12-18 1997-08-20 三菱電機株式会社 半導体圧力センサ装置
US5606117A (en) * 1991-02-27 1997-02-25 Robert Bosch Gmbh Pressure sensor for measuring pressure in an internal combustion engine
DE4133061A1 (de) * 1991-10-04 1993-04-15 Bosch Gmbh Robert Drucksensor
DE4137624A1 (de) * 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
JPH05149814A (ja) * 1991-11-29 1993-06-15 Fuji Electric Co Ltd 二重ダイヤフラム式半導体圧力センサ
DE4211997A1 (de) * 1992-04-09 1993-10-14 Jaeger Erich Gmbh & Co Kg Verfahren und Schaltungsanordnung zur elektrischen Kompensation des Temperatureinflusses auf das Meßsignal von mechanoelektrischen Meßwandlern
US5343755A (en) * 1993-05-05 1994-09-06 Rosemount Inc. Strain gage sensor with integral temperature signal
JP2991014B2 (ja) * 1993-10-08 1999-12-20 三菱電機株式会社 圧力センサ
US5507171A (en) * 1994-04-15 1996-04-16 Ssi Technologies, Inc. Electronic circuit for a transducer
EP0702221A3 (en) * 1994-09-14 1997-05-21 Delco Electronics Corp Sensor integrated on a chip
US5668320A (en) * 1995-06-19 1997-09-16 Cardiometrics, Inc. Piezoresistive pressure transducer circuitry accommodating transducer variability
US5551301A (en) * 1995-06-19 1996-09-03 Cardiometrics, Inc. Piezoresistive pressure transducer circuitry accommodating transducer variability
DE19527687A1 (de) * 1995-07-28 1997-01-30 Bosch Gmbh Robert Sensor
JP3727133B2 (ja) * 1997-03-14 2005-12-14 日本たばこ産業株式会社 荷重測定方法及び荷重測定装置
CA2320857A1 (en) * 1998-02-18 1999-08-26 Honeywell Data Instruments, Inc. Electrically insulated strain gage
US6729187B1 (en) 1999-04-29 2004-05-04 The Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations Self-compensated ceramic strain gage for use at high temperatures
CN1384914A (zh) * 1999-04-29 2002-12-11 罗得岛及普罗维登斯属地高等教育管理委员会 在高温下使用的自动补偿陶瓷应变计量器
DE10013904A1 (de) * 2000-03-21 2001-09-27 Bosch Gmbh Robert Mikromechanisches Bauelement und Abgleichverfahren
JP2002148131A (ja) * 2000-11-10 2002-05-22 Denso Corp 物理量検出装置
US6739199B1 (en) 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
DE102004026145A1 (de) * 2004-05-28 2006-05-11 Advanced Micro Devices, Inc., Sunnyvale Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur
DE102004043874A1 (de) * 2004-09-10 2006-03-16 Robert Bosch Gmbh Vorrichtung zur Erfassung des Drucks in einem Brennraum einer Verbrennungskraftmaschine
US7032456B1 (en) * 2004-12-30 2006-04-25 The United States Of America As Represented By The Secretary Of The Navy Isostatic piezoresistive pressure transducer with temperature output
US7293466B2 (en) * 2005-07-19 2007-11-13 Hitachi, Ltd. Bolt with function of measuring strain
JP2007205803A (ja) * 2006-01-31 2007-08-16 Fujitsu Ltd センサ信号処理システムおよびディテクタ
JP4697004B2 (ja) * 2006-03-29 2011-06-08 株式会社日立製作所 力学量測定装置
WO2011039567A1 (de) * 2009-09-30 2011-04-07 Tecsis Gmbh Messvorrichtung mit verstimmbarem widerstand
US8881597B2 (en) * 2009-09-30 2014-11-11 Tecsis Gmbh Measuring device including detection of deformations
US9157822B2 (en) * 2011-02-01 2015-10-13 Kulite Semiconductor Products, Inc. Electronic interface for LVDT-type pressure transducers using piezoresistive sensors
US9297687B2 (en) * 2013-05-17 2016-03-29 Sensata Technologies, Inc. Sense element having a stud fitted within the sense element
JP6237453B2 (ja) 2014-03-05 2017-11-29 株式会社デンソー 物理量検出装置
CN105806520A (zh) * 2016-05-18 2016-07-27 北京科技大学 一种电阻应变式压力传感器及其测试方法
JP7629762B2 (ja) * 2021-03-12 2025-02-14 Tdk株式会社 圧力センサおよびセンサシステム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2065640B1 (en, 2012) * 1969-09-09 1976-03-19 Bordeaux Sud
US3836796A (en) * 1973-09-24 1974-09-17 Nat Semiconductor Corp Semiconductor pressure transducer employing novel temperature compensation means
US4300395A (en) * 1978-11-08 1981-11-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor pressure detection device
US4333349A (en) * 1980-10-06 1982-06-08 Kulite Semiconductor Products, Inc. Binary balancing apparatus for semiconductor transducer structures
US4462018A (en) * 1982-11-05 1984-07-24 Gulton Industries, Inc. Semiconductor strain gauge with integral compensation resistors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108842U (en, 2012) * 1985-12-26 1987-07-11
JPS6323371A (ja) * 1986-07-16 1988-01-30 Nippon Denso Co Ltd 半導体歪検出器
US5042307A (en) * 1989-07-19 1991-08-27 Fuji Electric Co., Ltd. Amplifying compensation circuit for semiconductor
JPH05164635A (ja) * 1991-12-11 1993-06-29 Fujikura Ltd 半導体圧力センサの増幅補償回路
JP2007512534A (ja) * 2003-11-20 2007-05-17 ハネウェル・インターナショナル・インコーポレーテッド デジタル出力ｍｅｍｓ圧力センサおよび方法
WO2015072189A1 (ja) * 2013-11-14 2015-05-21 シャープ株式会社 圧力センサー、圧力センシングシステム、および圧力センサーの製造方法

Also Published As

Publication number Publication date
DE3419710A1 (de) 1984-11-29
US4576052A (en) 1986-03-18
JPH0367211B2 (en, 2012) 1991-10-22
DE3419710C2 (en, 2012) 1987-12-03

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