JPS59217339A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59217339A
JPS59217339A JP58092642A JP9264283A JPS59217339A JP S59217339 A JPS59217339 A JP S59217339A JP 58092642 A JP58092642 A JP 58092642A JP 9264283 A JP9264283 A JP 9264283A JP S59217339 A JPS59217339 A JP S59217339A
Authority
JP
Japan
Prior art keywords
film
mask material
mask
material film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58092642A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562463B2 (enExample
Inventor
Ryozo Nakayama
中山　良三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58092642A priority Critical patent/JPS59217339A/ja
Publication of JPS59217339A publication Critical patent/JPS59217339A/ja
Publication of JPH0562463B2 publication Critical patent/JPH0562463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0143—
    • H10W10/17—

Landscapes

  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
JP58092642A 1983-05-26 1983-05-26 半導体装置の製造方法 Granted JPS59217339A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58092642A JPS59217339A (ja) 1983-05-26 1983-05-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58092642A JPS59217339A (ja) 1983-05-26 1983-05-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59217339A true JPS59217339A (ja) 1984-12-07
JPH0562463B2 JPH0562463B2 (enExample) 1993-09-08

Family

ID=14060101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58092642A Granted JPS59217339A (ja) 1983-05-26 1983-05-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59217339A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141171A (ja) * 1984-12-14 1986-06-28 Toshiba Corp 半導体装置の製造方法
JPH01276641A (ja) * 1988-03-24 1989-11-07 Motorola Inc 半導体デバイスの製造方法
JPH0366145A (ja) * 1989-07-28 1991-03-20 American Teleph & Telegr Co <Att> 半導体装置
JPH03148155A (ja) * 1989-10-25 1991-06-24 Internatl Business Mach Corp <Ibm> 誘電体充填分離トレンチ形成方法
JPH06177236A (ja) * 1992-08-31 1994-06-24 Hyundai Electron Ind Co Ltd トレンチ構造の素子分離膜の製造方法
KR970030214A (ko) * 1995-11-06 1997-06-26 김주용 웨이퍼 평탄화 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320873A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320873A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141171A (ja) * 1984-12-14 1986-06-28 Toshiba Corp 半導体装置の製造方法
JPH01276641A (ja) * 1988-03-24 1989-11-07 Motorola Inc 半導体デバイスの製造方法
JPH0366145A (ja) * 1989-07-28 1991-03-20 American Teleph & Telegr Co <Att> 半導体装置
JPH03148155A (ja) * 1989-10-25 1991-06-24 Internatl Business Mach Corp <Ibm> 誘電体充填分離トレンチ形成方法
JPH06177236A (ja) * 1992-08-31 1994-06-24 Hyundai Electron Ind Co Ltd トレンチ構造の素子分離膜の製造方法
KR970030214A (ko) * 1995-11-06 1997-06-26 김주용 웨이퍼 평탄화 방법

Also Published As

Publication number Publication date
JPH0562463B2 (enExample) 1993-09-08

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