JPS5921068A - Ｍｏｓトランジスタにおけるド−ピング最適化方法 - Google Patents

Ｍｏｓトランジスタにおけるド−ピング最適化方法

Info

Publication number
JPS5921068A
JPS5921068A JP58118387A JP11838783A JPS5921068A JP S5921068 A JPS5921068 A JP S5921068A JP 58118387 A JP58118387 A JP 58118387A JP 11838783 A JP11838783 A JP 11838783A JP S5921068 A JPS5921068 A JP S5921068A
Authority
JP
Japan
Prior art keywords
doping
transistor
substrate
type
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58118387A
Other languages
English (en)
Japanese (ja)
Inventor
ピエ−ル・ジユ−シユ
ピエ−ル・パラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS5921068A publication Critical patent/JPS5921068A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P30/21—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H10P30/204—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
JP58118387A 1982-07-01 1983-07-01 Ｍｏｓトランジスタにおけるド−ピング最適化方法 Pending JPS5921068A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8211571 1982-07-01
FR8211571A FR2529715A1 (fr) 1982-07-01 1982-07-01 Procede d'optimisation du dopage dans un transistor mos

Publications (1)

Publication Number Publication Date
JPS5921068A true JPS5921068A (ja) 1984-02-02

Family

ID=9275586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58118387A Pending JPS5921068A (ja) 1982-07-01 1983-07-01 Ｍｏｓトランジスタにおけるド−ピング最適化方法

Country Status (3)

Country Link
EP (1) EP0099787A1 (enExample)
JP (1) JPS5921068A (enExample)
FR (1) FR2529715A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0255882A3 (de) * 1986-08-07 1990-05-30 Siemens Aktiengesellschaft npn-Bipolartransistor mit extrem flachen Emitter/Basis-Strukturen und Verfahren zu seiner Herstellung
US4889819A (en) * 1988-05-20 1989-12-26 International Business Machines Corporation Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate
EP0359530A3 (en) * 1988-09-15 1991-01-02 Advanced Micro Devices, Inc. Capacitive reduction of junctions in a semiconductor device
DE69027312T2 (de) * 1989-03-02 1997-01-30 Thunderbird Tech Inc Feldeffekttransistor mit fermi-schwellenspannung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor

Also Published As

Publication number Publication date
FR2529715B1 (enExample) 1984-12-21
FR2529715A1 (fr) 1984-01-06
EP0099787A1 (fr) 1984-02-01

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