JPS59197117A - 粒界絶縁型半導体磁器コンデンサの製造方法 - Google Patents
粒界絶縁型半導体磁器コンデンサの製造方法Info
- Publication number
- JPS59197117A JPS59197117A JP7181783A JP7181783A JPS59197117A JP S59197117 A JPS59197117 A JP S59197117A JP 7181783 A JP7181783 A JP 7181783A JP 7181783 A JP7181783 A JP 7181783A JP S59197117 A JPS59197117 A JP S59197117A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- porcelain
- reducing
- dielectric
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000919 ceramic Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 6
- 239000000843 powder Substances 0.000 claims description 28
- 229910052573 porcelain Inorganic materials 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000003985 ceramic capacitor Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- 230000002378 acidificating effect Effects 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 9
- 238000001513 hot isostatic pressing Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 molyfden Chemical compound 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7181783A JPS59197117A (ja) | 1983-04-22 | 1983-04-22 | 粒界絶縁型半導体磁器コンデンサの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7181783A JPS59197117A (ja) | 1983-04-22 | 1983-04-22 | 粒界絶縁型半導体磁器コンデンサの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59197117A true JPS59197117A (ja) | 1984-11-08 |
| JPH0153493B2 JPH0153493B2 (enrdf_load_stackoverflow) | 1989-11-14 |
Family
ID=13471484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7181783A Granted JPS59197117A (ja) | 1983-04-22 | 1983-04-22 | 粒界絶縁型半導体磁器コンデンサの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59197117A (enrdf_load_stackoverflow) |
-
1983
- 1983-04-22 JP JP7181783A patent/JPS59197117A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0153493B2 (enrdf_load_stackoverflow) | 1989-11-14 |
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