JPS5919350A - 集積回路用基板の製造方法 - Google Patents
集積回路用基板の製造方法Info
- Publication number
- JPS5919350A JPS5919350A JP12848682A JP12848682A JPS5919350A JP S5919350 A JPS5919350 A JP S5919350A JP 12848682 A JP12848682 A JP 12848682A JP 12848682 A JP12848682 A JP 12848682A JP S5919350 A JPS5919350 A JP S5919350A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- substrate
- crystal silicon
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 6
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000002048 anodisation reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12848682A JPS5919350A (ja) | 1982-07-23 | 1982-07-23 | 集積回路用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12848682A JPS5919350A (ja) | 1982-07-23 | 1982-07-23 | 集積回路用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5919350A true JPS5919350A (ja) | 1984-01-31 |
| JPS6244415B2 JPS6244415B2 (enrdf_load_stackoverflow) | 1987-09-21 |
Family
ID=14985934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12848682A Granted JPS5919350A (ja) | 1982-07-23 | 1982-07-23 | 集積回路用基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919350A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4970175A (en) * | 1988-08-09 | 1990-11-13 | U.S. Philips Corporation | Method of manufacturing a semiconductor device using SEG and a transitory substrate |
| US5421958A (en) * | 1993-06-07 | 1995-06-06 | The United States Of America As Represented By The Administrator Of The United States National Aeronautics And Space Administration | Selective formation of porous silicon |
| US7829971B2 (en) | 2007-12-14 | 2010-11-09 | Denso Corporation | Semiconductor apparatus |
| US8148809B2 (en) | 2009-01-15 | 2012-04-03 | Denso Corporation | Semiconductor device, method for manufacturing the same, and multilayer substrate having the same |
-
1982
- 1982-07-23 JP JP12848682A patent/JPS5919350A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4970175A (en) * | 1988-08-09 | 1990-11-13 | U.S. Philips Corporation | Method of manufacturing a semiconductor device using SEG and a transitory substrate |
| US5421958A (en) * | 1993-06-07 | 1995-06-06 | The United States Of America As Represented By The Administrator Of The United States National Aeronautics And Space Administration | Selective formation of porous silicon |
| US7829971B2 (en) | 2007-12-14 | 2010-11-09 | Denso Corporation | Semiconductor apparatus |
| US8148809B2 (en) | 2009-01-15 | 2012-04-03 | Denso Corporation | Semiconductor device, method for manufacturing the same, and multilayer substrate having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244415B2 (enrdf_load_stackoverflow) | 1987-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0299062B1 (en) | Process for producing thin single crystal silicon islands on insulator | |
| JPS6052037A (ja) | 半導体装置の製法 | |
| JPH01315159A (ja) | 誘電体分離半導体基板とその製造方法 | |
| JPH0783050B2 (ja) | 半導体素子の製造方法 | |
| JPS5919350A (ja) | 集積回路用基板の製造方法 | |
| JPH0964319A (ja) | Ｓｏｉ基板およびその製造方法 | |
| JPH0687480B2 (ja) | 半導体装置の製造方法 | |
| JPH0370155A (ja) | 誘電体分離型半導体装置の製造方法 | |
| JPS5828731B2 (ja) | ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ | |
| JPH02205339A (ja) | 半導体装置の製造方法 | |
| JPH05190658A (ja) | 誘電体分離ウエハの製造方法 | |
| JPS5916342A (ja) | 集積回路用基板の製造方法 | |
| JPS6244411B2 (enrdf_load_stackoverflow) | ||
| JPS6244414B2 (enrdf_load_stackoverflow) | ||
| JPS5939044A (ja) | 絶縁分離集積回路用基板の製造方法 | |
| JPS6249733B2 (enrdf_load_stackoverflow) | ||
| JPS6244412B2 (enrdf_load_stackoverflow) | ||
| JP3157595B2 (ja) | 誘電体分離基板 | |
| JP2664458B2 (ja) | 素子分離方法 | |
| JPH06204331A (ja) | 半導体装置 | |
| KR0167599B1 (ko) | 반도체 장치의 소자 분리방법 | |
| JPS5839026A (ja) | 半導体装置及びその製造方法 | |
| JPS6159819A (ja) | 半導体基体の製造方法 | |
| JPS61114547A (ja) | 半導体装置の製造方法 | |
| JPH0212854A (ja) | 誘電体分離型半導体集積回路基板の製造方法 |