JPS59177937A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59177937A
JPS59177937A JP58052214A JP5221483A JPS59177937A JP S59177937 A JPS59177937 A JP S59177937A JP 58052214 A JP58052214 A JP 58052214A JP 5221483 A JP5221483 A JP 5221483A JP S59177937 A JPS59177937 A JP S59177937A
Authority
JP
Japan
Prior art keywords
aluminum
passivation film
silicon nitride
semiconductor device
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58052214A
Other languages
English (en)
Inventor
Akinobu Satou
佐藤　倬暢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP58052214A priority Critical patent/JPS59177937A/ja
Publication of JPS59177937A publication Critical patent/JPS59177937A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48991—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on the semiconductor or solid-state body to be connected
    • H01L2224/48992—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は、半導体装置の製造方法に係るもので、特に、
耐湿性を改善することのできる半導体装置の製造方法に
関するものである。
電極や配線にアルミニウム素材を用いたトランジスタ装
置や集積回路装置などの半導体装置は、金属ケース、セ
ラミックあるいは樹脂などのパッケージを施して使用さ
れる。最近では経済性の理由から、大部分の半導体装置
で樹脂パッケージを採用するようになっている。しかし
、樹脂パッケージには根本的な欠点があシ、内部に封止
された素子を外気の影響から完全に保護することはでき
ない。従って外気の湿度が高くなると水分が樹脂パッケ
ージを浸透して内部の素子にまで達することは避けられ
ない。
樹脂パッケージには、エポキシ樹脂やシリコン樹脂、フ
ェノール樹脂などの熱硬化性樹脂が使用されるが、これ
らの樹脂中には微量のハロゲン原子が含有されている。
そのため、内部に浸透した水はこれらのハロゲン原子を
溶出して電解液を作ることになる。この電解液によって
、アルミニウム素材を用いて形成された電極や配線が腐
食されて、樹脂パッケージされた半導体装置の大きな不
良原因となっている。
上記のアルミニウムの腐食の原因は、アルミニウムの電
極や配線に金線をワイヤボンディングする異種接合など
にもあるが、その対策についても幾つかの方法が考えら
れている。その中で最も一般的なものは、電極や配線を
パッシベーション膜で覆うもの、及びアルミニウムの表
面を不動態化するものである。
これらのパッシベーション膜の形成−？フルミニラム表
面の不動態化の方法についても、それぞれ数種の方法が
提案されている。しかし、これらの方法によっても完全
にアルミニウム電極や配線を保護することは莫１ｆシか
った。
本発明は、上記のような問題を解決してアルミニウムの
腐食を防止できる信頼性の高い半導体装置を得ることを
目的とする。
本発明による半導体装置の製造方法は、ワイヤボンディ
ングの後に窒化シリコンのパッシベーション膜を形成し
、その欠陥部分において露出するアルミニウムを陽極化
成することによって不動態化して、上記の目的を達成す
るものである。
以下、図面を参照して、本発明の実施例について説明す
る。第１図〜第４図は本発明の実施例の各々の工程を示
す正面断面図である。
先ず、第１図のように、トランジスタなどの素子を形成
したシリコン基板１００表面にアルミニウム１１によっ
て電極及び配線を形成する。この表面には二配化シリコ
ン１２による第一のパッシベーション膜を形成し、ポン
ディングパッドに相当する部分のみエツチングして１余
去し、アルミニウム１１を露出させる。
次に、第２図のように、金線１６をポンディングパッド
にあたるアルミニウムにワイヤボンディングする。もち
ろん、この金線の一端は、リードフレームに接続されて
おジ、シリコン基板もリードフレームにペレットボンデ
ィングされて固着されている。
続いて、第３図のように、全体に窒化シリコン１４によ
る第二のパッシベーション膜を形成する。この窒化シリ
コンはプラズマ窒化シリコンで、プラズマ中でＯＶＤ法
によって形成するものである。
例えば、ＮＨ３，ＳｉＨ４，Ａｒ　を高周波プラズマ中
で活性化させて反応させると、５ｉ３Ｎ４ＨＸという組
成の窒化シリコン膜が形成される。このときの窒化シリ
コンの生成のだめの条件を示すと、１２５Ｗ。
３００℃、　２．０Ｔｏｒｒ程度である。
プラズマ窒化シリコンを堆積させると、アルミニウムの
ポンディングパッドの全面に、ピンホールの少ないパッ
シベーション膜が形成される。この窒化シリコン１４に
万一ビンホールがあったり、一部に、特に金線で形成さ
れるボールの影の部分に、完全に堆積されなかったりし
て、アルミニウムの表面が外気に曝されることになると
、アルミニウムの腐食が生じる大きな原因となる。そこ
で、第４図のように露出するアルミニウムを陽極化成に
よって不動態＠１５とする。
露出するアルミニウム表面を不動態化するためには、陽
極化成処理を行うと良い。例えば、２％しゆう酸溶液中
で２４℃で１０〜６０Ｖ印加したシ、１５％硫酸溶液中
で１０℃、１０〜３０■。
３％クロム酸溶液中３８℃、１０〜６０Ｖといった条件
で陽極化成処理を行う。
陽極化成処理を行うことによって、窒化シリコン１４に
例え欠陥が生じても、アルミニウムの表面に不動態膜が
形成されることになる。したがって、アルミニウム表面
は完全に保護されて、樹脂モールドパッケージによる場
合であっても腐食を防止することができる。
本発明によってアルミニウム表面を保護すると、何も施
さない場合に比較すると約１００倍、アルミニウムの表
面を酸化しただけの場合に比較すると約１０倍も耐腐食
性が改善されることが確認された。
本発明によれば、樹脂モールドによシパッケージがなさ
れる半導体装置であっても、アルミニウム電極や配線が
完全に保護され腐食を防止することができる。
したがって、安値でしかも信頼性の高い半導体装置が得
られる。
【図面の簡単な説明】
第１図〜第４図は本発明の実施例の工程を示す正面断面
図である。 １１・・・・・・アルミニウム、　　１４・・・・・・
窒化シリコン。 １５・・・・・・アルミニウム酸化物 特許出願人　東光株式会社

Claims (1)

    【特許請求の範囲】
  1. 半導体ペレットのアルミニウム電極にワイヤボンディン
    グが終了した半導体装置を樹脂モールドによる封止処理
    を施す前に、該半導体ペレット表面に窒化シリコンのパ
    ッシベーション膜を形成し、該アルミニウム電極を陽極
    化成処理して該パッシベーション膜に覆われない部分を
    不動態化することを特徴とする半導体装置の製造方法。
JP58052214A 1983-03-28 1983-03-28 半導体装置の製造方法 Pending JPS59177937A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052214A JPS59177937A (ja) 1983-03-28 1983-03-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052214A JPS59177937A (ja) 1983-03-28 1983-03-28 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS59177937A true JPS59177937A (ja) 1984-10-08

Family

ID=12908502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052214A Pending JPS59177937A (ja) 1983-03-28 1983-03-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59177937A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268737A (ja) * 1991-02-25 1992-09-24 Nec Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268737A (ja) * 1991-02-25 1992-09-24 Nec Corp 半導体装置

Similar Documents

Publication Publication Date Title
US5682065A (en) Hermetic chip and method of manufacture
JPH0697354A (ja) 開口部のあるフラッグを有する半導体装置
US7888257B2 (en) Integrated circuit package including wire bonds
EP1101837B1 (en) Moisture corrosion inhibitor layer for Al-alloy metallization layers for electronic devices and corresponding manufacturing method
JPS59177937A (ja) 半導体装置の製造方法
JPH0582581A (ja) 半導体装置の製造方法
US4974052A (en) Plastic packaged semiconductor device
JPS63216352A (ja) 半導体装置の製造方法
JPS6124261A (ja) リ−ドフレ−ム
JPH0745755A (ja) 樹脂封止型半導体装置とその製造方法
JPS61148824A (ja) 半導体装置の製造方法
JPS615562A (ja) 半導体装置
JPS60178651A (ja) 半導体装置
JPS60150657A (ja) レジンモ−ルド半導体装置
JPH06349814A (ja) 半導体集積回路装置
JPH09283545A (ja) 樹脂封止型半導体装置及びその製造方法
JPH0722559A (ja) リードフレーム
JPH01282844A (ja) 樹脂封止型半導体装置
JPS6085548A (ja) 集積回路装置
JPS6394640A (ja) 半導体素子の製造方法
JPH07135203A (ja) 半導体装置
JPH03296250A (ja) 樹脂封止型半導体装置
JPS6037135A (ja) 半導体装置
JPH02117162A (ja) 半導体装置
JPH02172265A (ja) 樹脂封止型半導体装置