JPS59150430A - 半導体デバイス - Google Patents

半導体デバイス

Info

Publication number
JPS59150430A
JPS59150430A JP58023700A JP2370083A JPS59150430A JP S59150430 A JPS59150430 A JP S59150430A JP 58023700 A JP58023700 A JP 58023700A JP 2370083 A JP2370083 A JP 2370083A JP S59150430 A JPS59150430 A JP S59150430A
Authority
JP
Japan
Prior art keywords
glass
film
protective film
semiconductor device
polarizability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58023700A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458690B2 (enrdf_load_stackoverflow
Inventor
Keiji Kobayashi
啓二 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58023700A priority Critical patent/JPS59150430A/ja
Publication of JPS59150430A publication Critical patent/JPS59150430A/ja
Publication of JPH0458690B2 publication Critical patent/JPH0458690B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Glass Compositions (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58023700A 1983-02-17 1983-02-17 半導体デバイス Granted JPS59150430A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58023700A JPS59150430A (ja) 1983-02-17 1983-02-17 半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58023700A JPS59150430A (ja) 1983-02-17 1983-02-17 半導体デバイス

Publications (2)

Publication Number Publication Date
JPS59150430A true JPS59150430A (ja) 1984-08-28
JPH0458690B2 JPH0458690B2 (enrdf_load_stackoverflow) 1992-09-18

Family

ID=12117659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58023700A Granted JPS59150430A (ja) 1983-02-17 1983-02-17 半導体デバイス

Country Status (1)

Country Link
JP (1) JPS59150430A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107527A (ja) * 2012-11-30 2014-06-09 Ricoh Co Ltd 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP2015111653A (ja) * 2013-10-30 2015-06-18 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP2018056596A (ja) * 2018-01-04 2018-04-05 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP2019054284A (ja) * 2018-12-12 2019-04-04 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107527A (ja) * 2012-11-30 2014-06-09 Ricoh Co Ltd 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
CN104823270A (zh) * 2012-11-30 2015-08-05 株式会社理光 场效应晶体管、显示元件、图像显示装置、和系统
KR20180010340A (ko) * 2012-11-30 2018-01-30 가부시키가이샤 리코 전계 효과형 트랜지스터, 표시 소자, 화상 표시 장치 및 시스템
CN108807427A (zh) * 2012-11-30 2018-11-13 株式会社理光 场效应晶体管、显示元件、图像显示装置、和系统
US10505046B2 (en) 2012-11-30 2019-12-10 Ricoh Company, Ltd. Field-effect transistor including a metal oxide composite protective layer, and display element, image display device, and system including the field-effect transistor
US11876137B2 (en) 2012-11-30 2024-01-16 Ricoh Company, Ltd. Field-effect transistor including a metal oxide composite protective layer, and display element, image display device, and system including the field-effect transistor
JP2015111653A (ja) * 2013-10-30 2015-06-18 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP2018056596A (ja) * 2018-01-04 2018-04-05 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP2019054284A (ja) * 2018-12-12 2019-04-04 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム

Also Published As

Publication number Publication date
JPH0458690B2 (enrdf_load_stackoverflow) 1992-09-18

Similar Documents

Publication Publication Date Title
TW374247B (en) Method of fabricating semiconductor device
JPH03133176A (ja) 炭化珪素半導体装置およびその製造方法
JPS59150430A (ja) 半導体デバイス
JPS5650533A (en) Semiconductor device
US3632432A (en) Glass-coated semiconductor
JPS5735318A (en) Manufacture of semiconductor device
JPS6321871A (ja) 半導体装置
JPS60147163A (ja) 半導体装置
JPH01114080A (ja) 薄膜トランジスタ
JPS59188957A (ja) 半導体装置用キヤパシタの製造方法
JPH0441510B2 (enrdf_load_stackoverflow)
JPH03218676A (ja) 化合物半導体用電極およびその製造方法
JPS6193647A (ja) 半導体装置
JPS63208274A (ja) 半導体装置
JPS5687986A (en) Solidstate image pickup device and its manufacture
JPS5571055A (en) Semiconductor device and its manufacturing method
JPS60120547A (ja) 半導体集積回路装置
JPH0376590B2 (enrdf_load_stackoverflow)
JPS6314477A (ja) 半導体装置
JPH01145866A (ja) 半導体装置
JPS60165763A (ja) 光−電子素子集積回路装置の製造方法
JPS63274174A (ja) 固体撮像装置の製造方法
JPS577926A (en) Manufacture of semiconductor device
JPS5533084A (en) Method of fabricating semiconductor device
JPH01232719A (ja) 半導体装置の製造方法