JPH0376590B2 - - Google Patents

Info

Publication number
JPH0376590B2
JPH0376590B2 JP57123864A JP12386482A JPH0376590B2 JP H0376590 B2 JPH0376590 B2 JP H0376590B2 JP 57123864 A JP57123864 A JP 57123864A JP 12386482 A JP12386482 A JP 12386482A JP H0376590 B2 JPH0376590 B2 JP H0376590B2
Authority
JP
Japan
Prior art keywords
thin film
electrode
film transistor
drain
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57123864A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5914675A (ja
Inventor
Yoshiharu Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57123864A priority Critical patent/JPS5914675A/ja
Publication of JPS5914675A publication Critical patent/JPS5914675A/ja
Publication of JPH0376590B2 publication Critical patent/JPH0376590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57123864A 1982-07-16 1982-07-16 薄膜トランジスタ− Granted JPS5914675A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57123864A JPS5914675A (ja) 1982-07-16 1982-07-16 薄膜トランジスタ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57123864A JPS5914675A (ja) 1982-07-16 1982-07-16 薄膜トランジスタ−

Publications (2)

Publication Number Publication Date
JPS5914675A JPS5914675A (ja) 1984-01-25
JPH0376590B2 true JPH0376590B2 (enrdf_load_stackoverflow) 1991-12-05

Family

ID=14871268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57123864A Granted JPS5914675A (ja) 1982-07-16 1982-07-16 薄膜トランジスタ−

Country Status (1)

Country Link
JP (1) JPS5914675A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2839529B2 (ja) * 1989-02-17 1998-12-16 株式会社東芝 薄膜トランジスタ
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer

Also Published As

Publication number Publication date
JPS5914675A (ja) 1984-01-25

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