JPS5914675A - 薄膜トランジスタ− - Google Patents

薄膜トランジスタ−

Info

Publication number
JPS5914675A
JPS5914675A JP57123864A JP12386482A JPS5914675A JP S5914675 A JPS5914675 A JP S5914675A JP 57123864 A JP57123864 A JP 57123864A JP 12386482 A JP12386482 A JP 12386482A JP S5914675 A JPS5914675 A JP S5914675A
Authority
JP
Japan
Prior art keywords
thin film
film transistor
electrode
layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57123864A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376590B2 (enrdf_load_stackoverflow
Inventor
Yoshiharu Ichikawa
市川　祥治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57123864A priority Critical patent/JPS5914675A/ja
Publication of JPS5914675A publication Critical patent/JPS5914675A/ja
Publication of JPH0376590B2 publication Critical patent/JPH0376590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57123864A 1982-07-16 1982-07-16 薄膜トランジスタ− Granted JPS5914675A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57123864A JPS5914675A (ja) 1982-07-16 1982-07-16 薄膜トランジスタ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57123864A JPS5914675A (ja) 1982-07-16 1982-07-16 薄膜トランジスタ−

Publications (2)

Publication Number Publication Date
JPS5914675A true JPS5914675A (ja) 1984-01-25
JPH0376590B2 JPH0376590B2 (enrdf_load_stackoverflow) 1991-12-05

Family

ID=14871268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57123864A Granted JPS5914675A (ja) 1982-07-16 1982-07-16 薄膜トランジスタ−

Country Status (1)

Country Link
JP (1) JPS5914675A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101242A (en) * 1989-02-17 1992-03-31 International Business Machines Corporation Thin film transistor
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101242A (en) * 1989-02-17 1992-03-31 International Business Machines Corporation Thin film transistor
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer

Also Published As

Publication number Publication date
JPH0376590B2 (enrdf_load_stackoverflow) 1991-12-05

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