JPS59150421A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59150421A
JPS59150421A JP2059383A JP2059383A JPS59150421A JP S59150421 A JPS59150421 A JP S59150421A JP 2059383 A JP2059383 A JP 2059383A JP 2059383 A JP2059383 A JP 2059383A JP S59150421 A JPS59150421 A JP S59150421A
Authority
JP
Japan
Prior art keywords
film
titanium
metal
substrate
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2059383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0150098B2 (cs
Inventor
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2059383A priority Critical patent/JPS59150421A/ja
Publication of JPS59150421A publication Critical patent/JPS59150421A/ja
Publication of JPH0150098B2 publication Critical patent/JPH0150098B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2059383A 1983-02-10 1983-02-10 半導体装置の製造方法 Granted JPS59150421A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2059383A JPS59150421A (ja) 1983-02-10 1983-02-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2059383A JPS59150421A (ja) 1983-02-10 1983-02-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59150421A true JPS59150421A (ja) 1984-08-28
JPH0150098B2 JPH0150098B2 (cs) 1989-10-27

Family

ID=12031549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2059383A Granted JPS59150421A (ja) 1983-02-10 1983-02-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59150421A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068612A (ja) * 1983-09-26 1985-04-19 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS62235775A (ja) * 1986-04-07 1987-10-15 Nippon Denso Co Ltd 半導体装置およびその製造方法
DE3908676A1 (de) * 1988-12-24 1990-06-28 Samsung Electronics Co Ltd Verfahren zur ausbildung niederohmiger kontakte an mindestens zwei n+/p+-vorohmschen bereichen einer hochintegrierten halbleiterschaltung
JPH0590204A (ja) * 1991-03-20 1993-04-09 Philips Gloeilampenfab:Nv 半導体デバイスの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068612A (ja) * 1983-09-26 1985-04-19 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS62235775A (ja) * 1986-04-07 1987-10-15 Nippon Denso Co Ltd 半導体装置およびその製造方法
DE3908676A1 (de) * 1988-12-24 1990-06-28 Samsung Electronics Co Ltd Verfahren zur ausbildung niederohmiger kontakte an mindestens zwei n+/p+-vorohmschen bereichen einer hochintegrierten halbleiterschaltung
JPH0590204A (ja) * 1991-03-20 1993-04-09 Philips Gloeilampenfab:Nv 半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPH0150098B2 (cs) 1989-10-27

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