JPS59126661A - 薄膜抵抗体の製法 - Google Patents
薄膜抵抗体の製法Info
- Publication number
- JPS59126661A JPS59126661A JP138883A JP138883A JPS59126661A JP S59126661 A JPS59126661 A JP S59126661A JP 138883 A JP138883 A JP 138883A JP 138883 A JP138883 A JP 138883A JP S59126661 A JPS59126661 A JP S59126661A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resistor
- layer
- surface portion
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 7
- 230000000630 rising effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP138883A JPS59126661A (ja) | 1983-01-08 | 1983-01-08 | 薄膜抵抗体の製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP138883A JPS59126661A (ja) | 1983-01-08 | 1983-01-08 | 薄膜抵抗体の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126661A true JPS59126661A (ja) | 1984-07-21 |
| JPH0118585B2 JPH0118585B2 (enrdf_load_stackoverflow) | 1989-04-06 |
Family
ID=11500099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP138883A Granted JPS59126661A (ja) | 1983-01-08 | 1983-01-08 | 薄膜抵抗体の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59126661A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990007790A1 (fr) * | 1988-12-28 | 1990-07-12 | Oki Electric Industry Co., Ltd. | Procede de formation de motifs |
| JPH05259290A (ja) * | 1991-12-30 | 1993-10-08 | Philips Gloeilampenfab:Nv | 半導体デバイスの製造方法およびヒューズ構造体 |
-
1983
- 1983-01-08 JP JP138883A patent/JPS59126661A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990007790A1 (fr) * | 1988-12-28 | 1990-07-12 | Oki Electric Industry Co., Ltd. | Procede de formation de motifs |
| US5074956A (en) * | 1988-12-28 | 1991-12-24 | Oki Electric Industry Co., Ltd. | Pattern forming method |
| JPH05259290A (ja) * | 1991-12-30 | 1993-10-08 | Philips Gloeilampenfab:Nv | 半導体デバイスの製造方法およびヒューズ構造体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0118585B2 (enrdf_load_stackoverflow) | 1989-04-06 |
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