JPS59125621A - 半導体製造装置 - Google Patents

半導体製造装置

Info

Publication number
JPS59125621A
JPS59125621A JP22868782A JP22868782A JPS59125621A JP S59125621 A JPS59125621 A JP S59125621A JP 22868782 A JP22868782 A JP 22868782A JP 22868782 A JP22868782 A JP 22868782A JP S59125621 A JPS59125621 A JP S59125621A
Authority
JP
Japan
Prior art keywords
chamber
wafer
temperature
semiconductor manufacturing
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22868782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377659B2 (enrdf_load_html_response
Inventor
Minoru Inoue
実 井上
Haruyoshi Yagi
八木　春良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22868782A priority Critical patent/JPS59125621A/ja
Publication of JPS59125621A publication Critical patent/JPS59125621A/ja
Publication of JPH0377659B2 publication Critical patent/JPH0377659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22868782A 1982-12-28 1982-12-28 半導体製造装置 Granted JPS59125621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22868782A JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22868782A JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS59125621A true JPS59125621A (ja) 1984-07-20
JPH0377659B2 JPH0377659B2 (enrdf_load_html_response) 1991-12-11

Family

ID=16880226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22868782A Granted JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS59125621A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283643A (ja) * 1986-05-02 1987-12-09 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド シリコンベースの半導体装置のためのコンタクト構造
JPH0325977A (ja) * 1989-06-23 1991-02-04 Fuji Electric Co Ltd ショットキーバリアダイオードの製造方法
FR2671628A1 (fr) * 1991-01-10 1992-07-17 Doryokuro Kakunenryo Appareil pour mesurer la temperature de chauffage dans un champ electrique intense de micro-ondes.
US5491112A (en) * 1989-06-30 1996-02-13 Im Institutet For Mikroelektronik Method and arrangement for treating silicon plates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691436A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Method for heating semiconductor substrate
JPS5754315A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Handotaisochinoseizohoho
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691436A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Method for heating semiconductor substrate
JPS5754315A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Handotaisochinoseizohoho
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283643A (ja) * 1986-05-02 1987-12-09 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド シリコンベースの半導体装置のためのコンタクト構造
JPH0325977A (ja) * 1989-06-23 1991-02-04 Fuji Electric Co Ltd ショットキーバリアダイオードの製造方法
US5491112A (en) * 1989-06-30 1996-02-13 Im Institutet For Mikroelektronik Method and arrangement for treating silicon plates
FR2671628A1 (fr) * 1991-01-10 1992-07-17 Doryokuro Kakunenryo Appareil pour mesurer la temperature de chauffage dans un champ electrique intense de micro-ondes.

Also Published As

Publication number Publication date
JPH0377659B2 (enrdf_load_html_response) 1991-12-11

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