JPH0377659B2 - - Google Patents

Info

Publication number
JPH0377659B2
JPH0377659B2 JP57228687A JP22868782A JPH0377659B2 JP H0377659 B2 JPH0377659 B2 JP H0377659B2 JP 57228687 A JP57228687 A JP 57228687A JP 22868782 A JP22868782 A JP 22868782A JP H0377659 B2 JPH0377659 B2 JP H0377659B2
Authority
JP
Japan
Prior art keywords
temperature
semiconductor substrate
transparent member
wafer
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57228687A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59125621A (ja
Inventor
Minoru Inoe
Haruyoshi Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22868782A priority Critical patent/JPS59125621A/ja
Publication of JPS59125621A publication Critical patent/JPS59125621A/ja
Publication of JPH0377659B2 publication Critical patent/JPH0377659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22868782A 1982-12-28 1982-12-28 半導体製造装置 Granted JPS59125621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22868782A JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22868782A JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS59125621A JPS59125621A (ja) 1984-07-20
JPH0377659B2 true JPH0377659B2 (enrdf_load_html_response) 1991-12-11

Family

ID=16880226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22868782A Granted JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS59125621A (enrdf_load_html_response)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
JP2611434B2 (ja) * 1989-06-23 1997-05-21 富士電機株式会社 ショットキーバリアダイオードの製造方法
SE465100B (sv) * 1989-06-30 1991-07-22 Inst Mikroelektronik Im Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva
JP2638311B2 (ja) * 1991-01-10 1997-08-06 動力炉・核燃料開発事業団 マイクロ波高電界中における加熱温度測定装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691436A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Method for heating semiconductor substrate
JPS5754315A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Handotaisochinoseizohoho
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Also Published As

Publication number Publication date
JPS59125621A (ja) 1984-07-20

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