JPH0377659B2 - - Google Patents
Info
- Publication number
- JPH0377659B2 JPH0377659B2 JP57228687A JP22868782A JPH0377659B2 JP H0377659 B2 JPH0377659 B2 JP H0377659B2 JP 57228687 A JP57228687 A JP 57228687A JP 22868782 A JP22868782 A JP 22868782A JP H0377659 B2 JPH0377659 B2 JP H0377659B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor substrate
- transparent member
- wafer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22868782A JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22868782A JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59125621A JPS59125621A (ja) | 1984-07-20 |
JPH0377659B2 true JPH0377659B2 (enrdf_load_html_response) | 1991-12-11 |
Family
ID=16880226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22868782A Granted JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59125621A (enrdf_load_html_response) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4796081A (en) * | 1986-05-02 | 1989-01-03 | Advanced Micro Devices, Inc. | Low resistance metal contact for silicon devices |
JP2611434B2 (ja) * | 1989-06-23 | 1997-05-21 | 富士電機株式会社 | ショットキーバリアダイオードの製造方法 |
SE465100B (sv) * | 1989-06-30 | 1991-07-22 | Inst Mikroelektronik Im | Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva |
JP2638311B2 (ja) * | 1991-01-10 | 1997-08-06 | 動力炉・核燃料開発事業団 | マイクロ波高電界中における加熱温度測定装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5691436A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Method for heating semiconductor substrate |
JPS5754315A (ja) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Handotaisochinoseizohoho |
JPS57178316A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Manufacture of semiconductor element and device therefor |
-
1982
- 1982-12-28 JP JP22868782A patent/JPS59125621A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59125621A (ja) | 1984-07-20 |
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