JPS59121923A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59121923A
JPS59121923A JP22871682A JP22871682A JPS59121923A JP S59121923 A JPS59121923 A JP S59121923A JP 22871682 A JP22871682 A JP 22871682A JP 22871682 A JP22871682 A JP 22871682A JP S59121923 A JPS59121923 A JP S59121923A
Authority
JP
Japan
Prior art keywords
layer
laser
insulating film
step parts
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22871682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410217B2 (enrdf_load_stackoverflow
Inventor
Yasuo Arima
康雄 有馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22871682A priority Critical patent/JPS59121923A/ja
Publication of JPS59121923A publication Critical patent/JPS59121923A/ja
Publication of JPH0410217B2 publication Critical patent/JPH0410217B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP22871682A 1982-12-28 1982-12-28 半導体装置の製造方法 Granted JPS59121923A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22871682A JPS59121923A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22871682A JPS59121923A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59121923A true JPS59121923A (ja) 1984-07-14
JPH0410217B2 JPH0410217B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=16880690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22871682A Granted JPS59121923A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59121923A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236846A (ja) * 1985-06-24 1987-02-17 アメリカ合衆国 金属層の平坦化方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797647A (en) * 1980-12-10 1982-06-17 Toshiba Corp Forming of electrode wiring in semiconductor device
JPS57210624A (en) * 1981-02-09 1982-12-24 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797647A (en) * 1980-12-10 1982-06-17 Toshiba Corp Forming of electrode wiring in semiconductor device
JPS57210624A (en) * 1981-02-09 1982-12-24 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236846A (ja) * 1985-06-24 1987-02-17 アメリカ合衆国 金属層の平坦化方法

Also Published As

Publication number Publication date
JPH0410217B2 (enrdf_load_stackoverflow) 1992-02-24

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