JPS59117265A - 薄膜電界効果トランジスタ - Google Patents

薄膜電界効果トランジスタ

Info

Publication number
JPS59117265A
JPS59117265A JP57226206A JP22620682A JPS59117265A JP S59117265 A JPS59117265 A JP S59117265A JP 57226206 A JP57226206 A JP 57226206A JP 22620682 A JP22620682 A JP 22620682A JP S59117265 A JPS59117265 A JP S59117265A
Authority
JP
Japan
Prior art keywords
amorphous silicon
hydrogen
thin film
deposited
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57226206A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367350B2 (enrdf_load_stackoverflow
Inventor
Mitsushi Ikeda
光志 池田
Toshio Aoki
寿男 青木
Koji Suzuki
幸治 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57226206A priority Critical patent/JPS59117265A/ja
Publication of JPS59117265A publication Critical patent/JPS59117265A/ja
Publication of JPH0367350B2 publication Critical patent/JPH0367350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57226206A 1982-12-24 1982-12-24 薄膜電界効果トランジスタ Granted JPS59117265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226206A JPS59117265A (ja) 1982-12-24 1982-12-24 薄膜電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226206A JPS59117265A (ja) 1982-12-24 1982-12-24 薄膜電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS59117265A true JPS59117265A (ja) 1984-07-06
JPH0367350B2 JPH0367350B2 (enrdf_load_stackoverflow) 1991-10-22

Family

ID=16841550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226206A Granted JPS59117265A (ja) 1982-12-24 1982-12-24 薄膜電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS59117265A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118178A (ja) * 1984-06-27 1986-01-27 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 近接ドープされた半導体デバイス
JPS6151878A (ja) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd 表示用パネルの製造方法
JPH0334457A (ja) * 1989-06-30 1991-02-14 Semiconductor Energy Lab Co Ltd 電界効果型半導体装置
US5093703A (en) * 1988-03-25 1992-03-03 Sanyo Electric Co., Ltd. Thin film transistor with 10-15% hydrogen content

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118178A (ja) * 1984-06-27 1986-01-27 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 近接ドープされた半導体デバイス
JPS6151878A (ja) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd 表示用パネルの製造方法
US5093703A (en) * 1988-03-25 1992-03-03 Sanyo Electric Co., Ltd. Thin film transistor with 10-15% hydrogen content
JPH0334457A (ja) * 1989-06-30 1991-02-14 Semiconductor Energy Lab Co Ltd 電界効果型半導体装置

Also Published As

Publication number Publication date
JPH0367350B2 (enrdf_load_stackoverflow) 1991-10-22

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