JPS59108358A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59108358A
JPS59108358A JP57219005A JP21900582A JPS59108358A JP S59108358 A JPS59108358 A JP S59108358A JP 57219005 A JP57219005 A JP 57219005A JP 21900582 A JP21900582 A JP 21900582A JP S59108358 A JPS59108358 A JP S59108358A
Authority
JP
Japan
Prior art keywords
film
gate electrode
metal silicide
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57219005A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157507B2 (enrdf_load_stackoverflow
Inventor
Shigeo Kashiwagi
柏木　茂雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57219005A priority Critical patent/JPS59108358A/ja
Publication of JPS59108358A publication Critical patent/JPS59108358A/ja
Publication of JPH0157507B2 publication Critical patent/JPH0157507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57219005A 1982-12-13 1982-12-13 半導体装置 Granted JPS59108358A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57219005A JPS59108358A (ja) 1982-12-13 1982-12-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57219005A JPS59108358A (ja) 1982-12-13 1982-12-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS59108358A true JPS59108358A (ja) 1984-06-22
JPH0157507B2 JPH0157507B2 (enrdf_load_stackoverflow) 1989-12-06

Family

ID=16728766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57219005A Granted JPS59108358A (ja) 1982-12-13 1982-12-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS59108358A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213075A (ja) * 1985-07-10 1987-01-21 Nec Corp 半導体装置
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ
JPS62124772A (ja) * 1985-11-26 1987-06-06 Hitachi Ltd 半導体装置
JPS62203370A (ja) * 1986-03-03 1987-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS63174371A (ja) * 1987-01-13 1988-07-18 Nec Corp 電界効果トランジスタ
JP2000183329A (ja) * 1998-10-08 2000-06-30 Sony Corp 半導体装置およびその製造方法
JP2007335891A (ja) * 1997-03-31 2007-12-27 Freescale Semiconductor Inc 半導体デバイス

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213075A (ja) * 1985-07-10 1987-01-21 Nec Corp 半導体装置
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ
JPS62124772A (ja) * 1985-11-26 1987-06-06 Hitachi Ltd 半導体装置
JPS62203370A (ja) * 1986-03-03 1987-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS63174371A (ja) * 1987-01-13 1988-07-18 Nec Corp 電界効果トランジスタ
JP2007335891A (ja) * 1997-03-31 2007-12-27 Freescale Semiconductor Inc 半導体デバイス
JP2000183329A (ja) * 1998-10-08 2000-06-30 Sony Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0157507B2 (enrdf_load_stackoverflow) 1989-12-06

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