JPS59108358A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS59108358A JPS59108358A JP21900582A JP21900582A JPS59108358A JP S59108358 A JPS59108358 A JP S59108358A JP 21900582 A JP21900582 A JP 21900582A JP 21900582 A JP21900582 A JP 21900582A JP S59108358 A JPS59108358 A JP S59108358A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- metal silicide
- gate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910017464 nitrogen compound Inorganic materials 0.000 claims abstract description 7
- 150000002830 nitrogen compounds Chemical class 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000000615 nonconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 229910008814 WSi2 Inorganic materials 0.000 abstract description 2
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910004217 TaSi2 Inorganic materials 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 206010011469 Crying Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明はＭＩＳ型牛型体導体装置良に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an MIS type bovine conductor device.
（ｂ） 技術の背景
電子機器に用いられるＭＩＳ型ＩＯ，ＭＩＳ型ＬＳＩ等
のＭＩＳ型半導体装置は高速に動作することが要求され
ており、そのため〜（Ｉｓ型ドブンジスタのゲート電極
として、−低抵抗の高いポリシリコン電極に代って電気
抵抗の低いモリブデンシリサイド（ＭｏＳｉ２）やタン
グステンシリサイド（ＷＳｉ２）のような高融点の金属
シリサイド電極が用いられるようになってきている。(b) Background of the technology MIS type semiconductor devices such as MIS type IO and MIS type LSI used in electronic equipment are required to operate at high speed. Metal silicide electrodes with high melting points, such as molybdenum silicide (MoSi2) and tungsten silicide (WSi2), which have low electrical resistance, are being used instead of polysilicon electrodes with high resistance.
（Ｃ） 従来技術と間頭点
ところでこのような金属シリサイド膜をＭＩＳ型半導体
装置のゲート電極として使用した場合、前記ゲート電極
を形成後該ゲート電極をマスクとしてソース領域および
ドレイン領域形成用不純物をシリコン（Ｓｉ）基板にイ
オン注入後、基板を熱処理する工程や、ゲート醸極、ソ
ース領域、ドレイン領域形成後基板上に燐硅酸ガラス（
ＰＳＧ）膜を形成後、熱処理する工程がある。このよう
な熱処理工程で金属シリサイドのゲート電極計のゲート
８ｉ（ｈ膜中に、金属シリサイド膜中のモリブデン（Ｍ
ｏ）やタングステン（Ｗ）等の金属が拡散する現象が生
じ、このためゲー）Ｓｉｎ２膜の耐圧が劣化し、したが
って形成されるＭＩＳ型半導体装社の特性が悪くなると
いった不都合を生じる。(C) Comparison with the prior art By the way, when such a metal silicide film is used as a gate electrode of an MIS type semiconductor device, after forming the gate electrode, impurities for forming a source region and a drain region are added using the gate electrode as a mask. After ion implantation into a silicon (Si) substrate, there is a step of heat-treating the substrate, and after forming the gate electrode, source region, and drain region, phosphosilicate glass (
After forming the PSG film, there is a step of heat treatment. In such a heat treatment process, molybdenum (M
A phenomenon occurs in which metals such as O) and tungsten (W) are diffused, and this causes problems such as deterioration of the withstand voltage of the Ga)Sin2 film and, therefore, deterioration of the characteristics of the formed MIS type semiconductor device.
（ｄ） 発明の目的
本発明はと述した問題点を除去し、金属シリサイド膜を
用いてＭＴＳ型半導体装置のゲート電極を形成した場合
、ゲート電極形成後の装置形成に必要な熱処理工程で、
金属シリサイド膜中の金属原子が、ゲー）８ｉ０２膜中
へ拡散しないような半導体装置の提供を目的とするもの
である。(d) Purpose of the Invention The present invention eliminates the above-mentioned problems, and when a gate electrode of an MTS type semiconductor device is formed using a metal silicide film, in a heat treatment step necessary for device formation after forming the gate electrode,
The object of the present invention is to provide a semiconductor device in which metal atoms in a metal silicide film do not diffuse into the Ga)8i02 film.
（ｅ） 発明の構成
かかる目的を達成するための本発明の半導体装置は、ソ
ース領域、ドレイン領域、ゲート絶縁膜及びゲート電極
を具備するＭ ｉ Ｓ型半導体装置の前記ゲート１ｊＬ
極が金属シリサイドの窒素化合物から成ることを特徴と
するものである。更に前記ゲート１！極が金属シリサイ
ドの窒素化合物膜及び金にシリサイド膜を順次積層して
形成されていることを特徴とするものである。(e) Structure of the Invention A semiconductor device of the present invention for achieving the above object is a semiconductor device of the M i S type semiconductor device comprising a source region, a drain region, a gate insulating film, and a gate electrode.
It is characterized in that the electrode is made of a nitrogen compound of metal silicide. Furthermore, the gate 1! It is characterized in that the electrode is formed by sequentially laminating a nitrogen compound film of metal silicide and a silicide film on gold.
（ｆ） 発明の実施例
以下図面を用いながら不発明の一実施例につき詳細に説
明する。(f) Embodiment of the Invention An embodiment of the invention will be described in detail below with reference to the drawings.
第１図は本発明の半導体装置の構造を示す断面図で、第
２図は該装置を形成するための装置ａの概略図である。FIG. 1 is a sectional view showing the structure of a semiconductor device of the present invention, and FIG. 2 is a schematic diagram of an apparatus a for forming the device.
図示する様に本発明の半導体装置は素子間分離用８ｉ０
２膜１で画定されたＰ型のＳ＋基板２にＮ型の不純物原
子である燐（Ｐ）または砒素（Ａｓ）原子がイオン注入
されてソース領域８およびドレイン領域４が形成されて
いる。そして該８１基板４上にゲート用５ｉＱ２膜５を
介して所定の形状にパターニングされたＭｏ８ｉ２のよ
うな金属シリサイドと窒素の化合物膜よりなるゲート電
極６が形成されている。この金属シリサイドとしてはＭ
ｏ８ｉ２の他にｗｓ Ｉ２やタンタルシリサイド（’Ｉ
’ａＳｉ２）であっても良い。このように鷲属シリサイ
ドと窒素との化合物膜によりゲート電極を形成すれば、
該ゲート電極を形成後の熱処理によっても金属シリ基
サイド膜を横路するＭＯ，Ｗ、Ｔａのような金属元素が
窒素によって移動するのが抑制され従ってゲート酸化膜
中に拡散するのを防止することができ、ゲート酸化膜の
耐圧劣化を生じない高耐圧のＭＩＳ型半導体装置を形成
することができる。As shown in the figure, the semiconductor device of the present invention has an 8i0
A source region 8 and a drain region 4 are formed by ion-implanting phosphorus (P) or arsenic (As) atoms, which are N-type impurity atoms, into a P-type S+ substrate 2 defined by two films 1. A gate electrode 6 made of a compound film of metal silicide such as Mo8i2 and nitrogen is formed on the 81 substrate 4 through a 5iQ2 film 5 for gate use, which is patterned into a predetermined shape. As this metal silicide, M
In addition to o8i2, ws I2 and tantalum silicide ('I
'aSi2). If the gate electrode is formed from a compound film of silicide and nitrogen in this way,
The heat treatment after forming the gate electrode also suppresses the movement of metal elements such as MO, W, and Ta that cross the metal silicide-based side film due to nitrogen, thereby preventing them from diffusing into the gate oxide film. This makes it possible to form a high breakdown voltage MIS type semiconductor device that does not cause deterioration of the breakdown voltage of the gate oxide film.
またこの他の実施例として前記ゲート電極の電気抵抗を
低下させるために、ゲート電極の下の部分を金属シリサ
イド膜の窒素化合物膜で形成して、金属シリサイド膜中
の金属原子がゲート酸化膜中に拡散するのを防止し、ゲ
ート電極の上の部分を金属シリサイド膜で形成した二層
構造のゲート電極としても良い。In another embodiment, in order to reduce the electrical resistance of the gate electrode, the lower part of the gate electrode is formed with a nitrogen compound film of the metal silicide film, so that the metal atoms in the metal silicide film are absorbed into the gate oxide film. The gate electrode may have a two-layer structure in which the upper part of the gate electrode is formed of a metal silicide film.
このような半導体装置を形成するには、第１図に示すよ
うにＰ型のＢ＋基板１上に素子間分離用の８ｉ（ｈ膜２
を基板を熱酸化することによや形成する。次いでゲート
用５１０２膜を基板の熱酸化法により形成した後、該基
板２を第２図に示すスパッタ装置の容器１１中の基板設
置台り上に設置する。To form such a semiconductor device, as shown in FIG. 1, an 8i (h film 2
is formed by thermally oxidizing the substrate. Next, after a gate 5102 film is formed by thermal oxidation of the substrate, the substrate 2 is placed on a substrate mounting stand in a container 11 of a sputtering apparatus shown in FIG.
次いで該容器］１内を１０ Ｔｏｒｒ程度に排気孔詔
より排気したのち、ガス導入孔１４より５〜６容量％の
窒素ガスが添加されているアルゴン（Ａｒ）ガスを導入
する。その後基板設置台１２をアース電位としＭＯター
ゲット１５および８１ターゲツト１６に負の高電圧を印
加してＡｒガスをイオン化し、該Ａｒガスをスパッタ用
ガスとしてターゲットをスパッタして基板上にＭｏ５ｉ
ｚの窒素化合物膜を形成する。Next, the inside of the container [1] is evacuated to about 10 Torr through the exhaust hole, and then argon (Ar) gas to which 5 to 6% by volume of nitrogen gas is added is introduced through the gas introduction hole 14. Thereafter, the substrate mounting table 12 is set to ground potential, and a negative high voltage is applied to the MO target 15 and 81 target 16 to ionize the Ar gas, and the target is sputtered using the Ar gas as a sputtering gas to deposit Mo5i on the substrate.
A nitrogen compound film of z is formed.
次に該基板上にホトレジスト膜を塗布したのち、該レジ
スト膜を写真蝕刻法およびプラズマエツチング法により
所定のパターンに形成する０次に該パターニングされた
レジスト膜をマスクとして例えば四塩化炭素（０１！４
）ガス等をエツチング用ガスとして用いてプラズマエツ
チング法によって、前記Ｍｏ８ｉ２の窒素化合物膜を所
定のパターンに形成してゲート電極とする。その後この
ようにパターニングされたゲート電極をマスクとして基
板上にＡＳまたはＰ原子をイオン注入してソース領域８
およびドレイン領域４を形成する。Next, a photoresist film is applied on the substrate, and then the resist film is formed into a predetermined pattern by photolithography and plasma etching.The patterned resist film is used as a mask, for example, carbon tetrachloride (01!). 4
) The Mo8i2 nitrogen compound film is formed into a predetermined pattern by a plasma etching method using etching gas or the like as an etching gas to form a gate electrode. After that, using the gate electrode patterned in this way as a mask, AS or P atoms are ion-implanted onto the substrate to form the source region 8.
and drain region 4 is formed.
（ｇ） 発明の効果
以上述べたように本発明の半導体装置によれば、ゲート
酸化膜中にゲー）！極を形成する金属シリサイド膜の金
属原子が拡散するのが防止され耐圧の高いゲート酸化膜
が得られ、特性の良好な半導体装置が得られる利点を生
じる。(g) Effects of the Invention As described above, according to the semiconductor device of the present invention, the gate oxide film contains G! This has the advantage that metal atoms in the metal silicide film forming the electrode are prevented from diffusing, a gate oxide film with high breakdown voltage is obtained, and a semiconductor device with good characteristics can be obtained.
筑Ｉ俯は木感叩の半這伏紡督の漕ルル箒ネ鮪占図、第２
図は本発明の牛導体装置を形成するのに用いる装置の概
略図である。
図においてｌは素子間分離用８１０２膜、２はＳｉ基板
、８はソース領域、４はドレイン領域、５はゲート用５
ｉｎ２膜、６はＭ ＯＳ ＋ ２と窒素との化合物より
なるゲート電極、１１は容藷、栓は基板設置台ζｍは排
気口、１４はガス導入孔、１５けＭＯツタ−ット、１６
はＳｉターゲットを示す。
第１図
第２図
２７５−Chiku I-kun is a map of half-crying spinners with wooden handles, 2nd edition.
The figure is a schematic diagram of the equipment used to form the bovine conductor device of the present invention. In the figure, l is an 8102 film for element isolation, 2 is a Si substrate, 8 is a source region, 4 is a drain region, 5 is a gate 5
in2 film, 6 is a gate electrode made of a compound of MOS + 2 and nitrogen, 11 is a container, the plug is a substrate installation stand ζm is an exhaust port, 14 is a gas introduction hole, 15 is a MO tube, 16
indicates a Si target. Figure 1 Figure 2 275-
Claims (2)
びゲート電極を具備するＭＩＳ型半導体装置の前記ゲー
ト電極が金属シリサイドの窒素化合物から成ることを特
徴とする半導体装置。(1) A MIS type semiconductor device comprising a source region, a drain region, a gate insulating film, and a gate electrode, wherein the gate electrode is made of a nitrogen compound of metal silicide.
及び金属シリサイド膜を順次極層して形成されているこ
とを特徴とする特許請求の範匣第（１）項に記載の午導
不装置。(2) The meridional non-conductor according to claim 1, wherein the gate electrode is formed by sequentially forming a nitride film of metal silicide and a metal silicide film. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21900582A JPS59108358A (en) | 1982-12-13 | 1982-12-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21900582A JPS59108358A (en) | 1982-12-13 | 1982-12-13 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59108358A true JPS59108358A (en) | 1984-06-22 |
| JPH0157507B2 JPH0157507B2 (en) | 1989-12-06 |
Family
ID=16728766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21900582A Granted JPS59108358A (en) | 1982-12-13 | 1982-12-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59108358A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213075A (en) * | 1985-07-10 | 1987-01-21 | Nec Corp | Semiconductor device |
| JPS6254960A (en) * | 1985-09-04 | 1987-03-10 | Nec Corp | Mis field effect transistor |
| JPS62124772A (en) * | 1985-11-26 | 1987-06-06 | Hitachi Ltd | Semiconductor device |
| JPS62203370A (en) * | 1986-03-03 | 1987-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS63174371A (en) * | 1987-01-13 | 1988-07-18 | Nec Corp | Field-effect transistor |
| JP2000183329A (en) * | 1998-10-08 | 2000-06-30 | Sony Corp | Semiconductor device and manufacture of the same |
| JP2007335891A (en) * | 1997-03-31 | 2007-12-27 | Freescale Semiconductor Inc | Semiconductor device |
-
1982
- 1982-12-13 JP JP21900582A patent/JPS59108358A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213075A (en) * | 1985-07-10 | 1987-01-21 | Nec Corp | Semiconductor device |
| JPS6254960A (en) * | 1985-09-04 | 1987-03-10 | Nec Corp | Mis field effect transistor |
| JPS62124772A (en) * | 1985-11-26 | 1987-06-06 | Hitachi Ltd | Semiconductor device |
| JPS62203370A (en) * | 1986-03-03 | 1987-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS63174371A (en) * | 1987-01-13 | 1988-07-18 | Nec Corp | Field-effect transistor |
| JP2007335891A (en) * | 1997-03-31 | 2007-12-27 | Freescale Semiconductor Inc | Semiconductor device |
| JP2000183329A (en) * | 1998-10-08 | 2000-06-30 | Sony Corp | Semiconductor device and manufacture of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0157507B2 (en) | 1989-12-06 |
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