JPH0157507B2 - - Google Patents

Info

Publication number
JPH0157507B2
JPH0157507B2 JP57219005A JP21900582A JPH0157507B2 JP H0157507 B2 JPH0157507 B2 JP H0157507B2 JP 57219005 A JP57219005 A JP 57219005A JP 21900582 A JP21900582 A JP 21900582A JP H0157507 B2 JPH0157507 B2 JP H0157507B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
metal silicide
semiconductor device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57219005A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59108358A (ja
Inventor
Shigeo Kashiwagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57219005A priority Critical patent/JPS59108358A/ja
Publication of JPS59108358A publication Critical patent/JPS59108358A/ja
Publication of JPH0157507B2 publication Critical patent/JPH0157507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57219005A 1982-12-13 1982-12-13 半導体装置 Granted JPS59108358A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57219005A JPS59108358A (ja) 1982-12-13 1982-12-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57219005A JPS59108358A (ja) 1982-12-13 1982-12-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS59108358A JPS59108358A (ja) 1984-06-22
JPH0157507B2 true JPH0157507B2 (enrdf_load_stackoverflow) 1989-12-06

Family

ID=16728766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57219005A Granted JPS59108358A (ja) 1982-12-13 1982-12-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS59108358A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213075A (ja) * 1985-07-10 1987-01-21 Nec Corp 半導体装置
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ
JPS62124772A (ja) * 1985-11-26 1987-06-06 Hitachi Ltd 半導体装置
JPS62203370A (ja) * 1986-03-03 1987-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS63174371A (ja) * 1987-01-13 1988-07-18 Nec Corp 電界効果トランジスタ
US6084279A (en) * 1997-03-31 2000-07-04 Motorola Inc. Semiconductor device having a metal containing layer overlying a gate dielectric
JP4581159B2 (ja) * 1998-10-08 2010-11-17 ソニー株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS59108358A (ja) 1984-06-22

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