JPS59106162A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS59106162A JPS59106162A JP57217243A JP21724382A JPS59106162A JP S59106162 A JPS59106162 A JP S59106162A JP 57217243 A JP57217243 A JP 57217243A JP 21724382 A JP21724382 A JP 21724382A JP S59106162 A JPS59106162 A JP S59106162A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor device
- protective
- buried layer
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217243A JPS59106162A (ja) | 1982-12-10 | 1982-12-10 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217243A JPS59106162A (ja) | 1982-12-10 | 1982-12-10 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59106162A true JPS59106162A (ja) | 1984-06-19 |
| JPH0580834B2 JPH0580834B2 (enExample) | 1993-11-10 |
Family
ID=16701091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57217243A Granted JPS59106162A (ja) | 1982-12-10 | 1982-12-10 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59106162A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148249A (en) * | 1988-04-14 | 1992-09-15 | Kabushiki Kaisha Toshiba | Semiconductor protection device |
| US9508872B2 (en) | 2013-07-11 | 2016-11-29 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device and pin diode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07232552A (ja) * | 1994-02-23 | 1995-09-05 | Toyonaga Takemori | 車の二段式日よけ |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5243382A (en) * | 1975-10-02 | 1977-04-05 | Matsushita Electronics Corp | Mos type diode |
| JPS5429587A (en) * | 1977-08-10 | 1979-03-05 | Hitachi Ltd | Semiconductor device |
| JPS54139374A (en) * | 1978-04-21 | 1979-10-29 | Toshiba Corp | Semiconductor device |
| JPS56105670A (en) * | 1980-01-28 | 1981-08-22 | Mitsubishi Electric Corp | Semiconductor device |
-
1982
- 1982-12-10 JP JP57217243A patent/JPS59106162A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5243382A (en) * | 1975-10-02 | 1977-04-05 | Matsushita Electronics Corp | Mos type diode |
| JPS5429587A (en) * | 1977-08-10 | 1979-03-05 | Hitachi Ltd | Semiconductor device |
| JPS54139374A (en) * | 1978-04-21 | 1979-10-29 | Toshiba Corp | Semiconductor device |
| JPS56105670A (en) * | 1980-01-28 | 1981-08-22 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148249A (en) * | 1988-04-14 | 1992-09-15 | Kabushiki Kaisha Toshiba | Semiconductor protection device |
| US9508872B2 (en) | 2013-07-11 | 2016-11-29 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device and pin diode |
| JPWO2015004774A1 (ja) * | 2013-07-11 | 2017-02-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580834B2 (enExample) | 1993-11-10 |
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