JPS59100570A - Ｍｏｓトランジスタ - Google Patents

Ｍｏｓトランジスタ

Info

Publication number
JPS59100570A
JPS59100570A JP57209989A JP20998982A JPS59100570A JP S59100570 A JPS59100570 A JP S59100570A JP 57209989 A JP57209989 A JP 57209989A JP 20998982 A JP20998982 A JP 20998982A JP S59100570 A JPS59100570 A JP S59100570A
Authority
JP
Japan
Prior art keywords
diffusion region
breakdown
mos transistor
drain diffusion
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57209989A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328836B2 (OSRAM
Inventor
Teruyoshi Mihara
輝儀 三原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP57209989A priority Critical patent/JPS59100570A/ja
Priority to EP83111730A priority patent/EP0110320B1/en
Priority to DE8383111730T priority patent/DE3370245D1/de
Publication of JPS59100570A publication Critical patent/JPS59100570A/ja
Publication of JPH0328836B2 publication Critical patent/JPH0328836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57209989A 1982-11-27 1982-11-30 Ｍｏｓトランジスタ Granted JPS59100570A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57209989A JPS59100570A (ja) 1982-11-30 1982-11-30 Ｍｏｓトランジスタ
EP83111730A EP0110320B1 (en) 1982-11-27 1983-11-23 A mos transistor
DE8383111730T DE3370245D1 (de) 1982-11-27 1983-11-23 A mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57209989A JPS59100570A (ja) 1982-11-30 1982-11-30 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS59100570A true JPS59100570A (ja) 1984-06-09
JPH0328836B2 JPH0328836B2 (OSRAM) 1991-04-22

Family

ID=16582012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57209989A Granted JPS59100570A (ja) 1982-11-27 1982-11-30 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS59100570A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222676A (ja) * 1986-03-25 1987-09-30 Nec Corp 高耐圧ｍｏｓトランジスタ
US4929991A (en) * 1987-11-12 1990-05-29 Siliconix Incorporated Rugged lateral DMOS transistor structure
JPH0474474A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp 半導体装置
JPH04107871A (ja) * 1990-08-27 1992-04-09 Matsushita Electron Corp 半導体装置およびそれを用いたイグナイタ装置
EP0759639A3 (en) * 1995-08-17 1998-04-15 Oki Electric Industry Co., Ltd. Source/drain structure of high voltage MOSFET and method of fabricating the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222676A (ja) * 1986-03-25 1987-09-30 Nec Corp 高耐圧ｍｏｓトランジスタ
US4929991A (en) * 1987-11-12 1990-05-29 Siliconix Incorporated Rugged lateral DMOS transistor structure
JPH0474474A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp 半導体装置
JPH04107871A (ja) * 1990-08-27 1992-04-09 Matsushita Electron Corp 半導体装置およびそれを用いたイグナイタ装置
EP0759639A3 (en) * 1995-08-17 1998-04-15 Oki Electric Industry Co., Ltd. Source/drain structure of high voltage MOSFET and method of fabricating the same
US6054743A (en) * 1995-08-17 2000-04-25 Oki Electric Industry Co., Ltd. High voltage MOS transistor

Also Published As

Publication number Publication date
JPH0328836B2 (OSRAM) 1991-04-22

Similar Documents

Publication Publication Date Title
EP0110331B1 (en) A mos transistor
JPH0766428A (ja) 薄膜ｓｏｉ装置及びその製造方法
JP3076468B2 (ja) 半導体装置
JPS63166269A (ja) 相補形横方向絶縁ゲート整流器
JPS59100570A (ja) Ｍｏｓトランジスタ
US4651178A (en) Dual inverse zener diode with buried junctions
JPS59132671A (ja) 縦型ｍｏｓトランジスタ
US5466959A (en) Semiconductor device for influencing the breakdown voltage of transistors
JP4029549B2 (ja) 半導体装置
JPS6290964A (ja) 集積回路保護構造
JPS5923569A (ja) 半導体可変容量素子
JP2973450B2 (ja) 半導体装置
JP2881907B2 (ja) 電力用半導体装置
JPH09181268A (ja) Ｍｏｓ蓄電器
JPS59132673A (ja) Ｍｏｓトランジスタ
JP2907504B2 (ja) 半導体装置
JPS59105369A (ja) 半導体装置
JPS5998558A (ja) Ｍｏｓトランジスタ
JPS59100569A (ja) Ｍｏｓトランジスタ
JPS604263A (ja) Ｍｏｓ電界効果半導体装置
JP3594725B2 (ja) 半導体装置の保護回路
US7485972B2 (en) Semiconductor device
US6043555A (en) Bipolar silicon-on-insulator transistor with increased breakdown voltage
JPS58132958A (ja) 集積化容量
JPS62183177A (ja) 半導体装置