JPS5893354A - 半導体装置の製造法 - Google Patents
半導体装置の製造法Info
- Publication number
- JPS5893354A JPS5893354A JP19470381A JP19470381A JPS5893354A JP S5893354 A JPS5893354 A JP S5893354A JP 19470381 A JP19470381 A JP 19470381A JP 19470381 A JP19470381 A JP 19470381A JP S5893354 A JPS5893354 A JP S5893354A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- insulating film
- sputtering
- ions
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000992 sputter etching Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000002747 voluntary effect Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19470381A JPS5893354A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19470381A JPS5893354A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893354A true JPS5893354A (ja) | 1983-06-03 |
| JPH033382B2 JPH033382B2 (enrdf_load_stackoverflow) | 1991-01-18 |
Family
ID=16328853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19470381A Granted JPS5893354A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893354A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872401A (en) * | 1996-02-29 | 1999-02-16 | Intel Corporation | Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5328530A (en) * | 1976-08-30 | 1978-03-16 | Hitachi Ltd | Method of etching surfaces of solids |
| JPS5359741A (en) * | 1976-11-10 | 1978-05-29 | Nat Jutaku Kenzai | Powder painting device |
| JPS5559741A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Preparation of semiconductor device |
| JPS55130147A (en) * | 1973-06-29 | 1980-10-08 | Ibm | Multilayer wired integrated circuit |
| JPS56148826A (en) * | 1980-04-21 | 1981-11-18 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5797649A (en) * | 1980-12-11 | 1982-06-17 | Nec Corp | Manufacture of semiconductor device |
-
1981
- 1981-11-30 JP JP19470381A patent/JPS5893354A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55130147A (en) * | 1973-06-29 | 1980-10-08 | Ibm | Multilayer wired integrated circuit |
| JPS5328530A (en) * | 1976-08-30 | 1978-03-16 | Hitachi Ltd | Method of etching surfaces of solids |
| JPS5359741A (en) * | 1976-11-10 | 1978-05-29 | Nat Jutaku Kenzai | Powder painting device |
| JPS5559741A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Preparation of semiconductor device |
| JPS56148826A (en) * | 1980-04-21 | 1981-11-18 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5797649A (en) * | 1980-12-11 | 1982-06-17 | Nec Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872401A (en) * | 1996-02-29 | 1999-02-16 | Intel Corporation | Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD |
| US5872064A (en) * | 1996-02-29 | 1999-02-16 | Intel Corporation | DSAD process for deposition of inter layer dielectric |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH033382B2 (enrdf_load_stackoverflow) | 1991-01-18 |
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