JPS5893270A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5893270A
JPS5893270A JP19217881A JP19217881A JPS5893270A JP S5893270 A JPS5893270 A JP S5893270A JP 19217881 A JP19217881 A JP 19217881A JP 19217881 A JP19217881 A JP 19217881A JP S5893270 A JPS5893270 A JP S5893270A
Authority
JP
Japan
Prior art keywords
film
connecting member
semiconductor
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19217881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346977B2 (cs
Inventor
Iwao Tokawa
東川　巌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP19217881A priority Critical patent/JPS5893270A/ja
Publication of JPS5893270A publication Critical patent/JPS5893270A/ja
Publication of JPH0346977B2 publication Critical patent/JPH0346977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP19217881A 1981-11-30 1981-11-30 半導体装置の製造方法 Granted JPS5893270A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19217881A JPS5893270A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19217881A JPS5893270A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893270A true JPS5893270A (ja) 1983-06-02
JPH0346977B2 JPH0346977B2 (cs) 1991-07-17

Family

ID=16286971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19217881A Granted JPS5893270A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893270A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189264A (ja) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS6231176A (ja) * 1985-08-02 1987-02-10 Sharp Corp 積層型半導体装置
JPS62145774A (ja) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol 半導体装置
JPS6477951A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Semiconductor substrate and manufacture thereof
JP2004104134A (ja) * 2003-09-12 2004-04-02 Nec Kagoshima Ltd パターン形成方法及び薄膜トランジスタの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249772A (en) * 1975-10-18 1977-04-21 Hitachi Ltd Process for production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249772A (en) * 1975-10-18 1977-04-21 Hitachi Ltd Process for production of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189264A (ja) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS6231176A (ja) * 1985-08-02 1987-02-10 Sharp Corp 積層型半導体装置
JPS62145774A (ja) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol 半導体装置
JPS6477951A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Semiconductor substrate and manufacture thereof
JP2004104134A (ja) * 2003-09-12 2004-04-02 Nec Kagoshima Ltd パターン形成方法及び薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0346977B2 (cs) 1991-07-17

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