JPS589286A - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ

Info

Publication number
JPS589286A
JPS589286A JP56107689A JP10768981A JPS589286A JP S589286 A JPS589286 A JP S589286A JP 56107689 A JP56107689 A JP 56107689A JP 10768981 A JP10768981 A JP 10768981A JP S589286 A JPS589286 A JP S589286A
Authority
JP
Japan
Prior art keywords
potential
transistor
testing
voltage
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56107689A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348120B2 (enExample
Inventor
Hiroshi Iwahashi
岩橋　弘
Masamichi Asano
正通 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56107689A priority Critical patent/JPS589286A/ja
Priority to GB8136789A priority patent/GB2089612B/en
Priority to US06/329,059 priority patent/US4467457A/en
Priority to DE19813148806 priority patent/DE3148806A1/de
Publication of JPS589286A publication Critical patent/JPS589286A/ja
Publication of JPS6348120B2 publication Critical patent/JPS6348120B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP56107689A 1980-12-12 1981-07-10 不揮発性半導体メモリ Granted JPS589286A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56107689A JPS589286A (ja) 1981-07-10 1981-07-10 不揮発性半導体メモリ
GB8136789A GB2089612B (en) 1980-12-12 1981-12-07 Nonvolatile semiconductor memory device
US06/329,059 US4467457A (en) 1980-12-12 1981-12-09 Nonvolatile semiconductor memory device
DE19813148806 DE3148806A1 (de) 1980-12-12 1981-12-10 Nicht-fluechtiger halbleiterspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56107689A JPS589286A (ja) 1981-07-10 1981-07-10 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS589286A true JPS589286A (ja) 1983-01-19
JPS6348120B2 JPS6348120B2 (enExample) 1988-09-27

Family

ID=14465465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56107689A Granted JPS589286A (ja) 1980-12-12 1981-07-10 不揮発性半導体メモリ

Country Status (1)

Country Link
JP (1) JPS589286A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140442A (en) * 1975-05-13 1976-12-03 Ncr Co Memory circuit
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140442A (en) * 1975-05-13 1976-12-03 Ncr Co Memory circuit
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPS6348120B2 (enExample) 1988-09-27

Similar Documents

Publication Publication Date Title
JP3039458B2 (ja) 不揮発性半導体メモリ
US4612630A (en) EEPROM margin testing design
US8274842B1 (en) Variable impedance memory device having simultaneous program and erase, and corresponding methods and circuits
JP3881020B2 (ja) プログラム可能論理回路用のプログラム可能不揮発性両方向スイッチ
KR900006144B1 (ko) 불휘발성 반도체기억장치
JPS6348118B2 (enExample)
KR950001776A (ko) 강유전체 메모리
JPH01113999A (ja) 不揮発性メモリのストレステスト回路
US4758748A (en) Sense amplifier for programmable read only memory
US5333122A (en) Electrically erasable and programmable non-volatile semiconductor memory device having word line voltage control circuit using internal voltage booster circuit
US5586074A (en) Semiconductor memory device with function of preventing loss of information due to leak of charges or disturbing
US4374430A (en) Semiconductor PROM device
TW202009941A (zh) 記憶體單元及記憶體系統
US4063224A (en) Circuit for the production of read-out pulses
JPS621193A (ja) 半導体記憶装置
US7872918B2 (en) Nonvolatile memory device and program or erase method using the same
US6163481A (en) Flash memory wordline tracking across whole chip
KR950008674B1 (ko) 불휘발성 반도체 기억장치 및 그의 데이타소거방법
JPH03272100A (ja) 不揮発性半導体記憶装置
EP0045610B1 (en) A semiconductor read only memory device
US9330755B1 (en) Latch circuits and methods with programmable impedance elements
JPS589286A (ja) 不揮発性半導体メモリ
US4827451A (en) Safety device for the programming of an electrically programmable non-volatile memory
JP4484344B2 (ja) 不揮発性半導体記憶装置
TW411468B (en) Non-volatile semiconductor device