JPS6348120B2 - - Google Patents

Info

Publication number
JPS6348120B2
JPS6348120B2 JP56107689A JP10768981A JPS6348120B2 JP S6348120 B2 JPS6348120 B2 JP S6348120B2 JP 56107689 A JP56107689 A JP 56107689A JP 10768981 A JP10768981 A JP 10768981A JP S6348120 B2 JPS6348120 B2 JP S6348120B2
Authority
JP
Japan
Prior art keywords
potential
memory cell
transistor
gate
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56107689A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589286A (ja
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56107689A priority Critical patent/JPS589286A/ja
Priority to GB8136789A priority patent/GB2089612B/en
Priority to US06/329,059 priority patent/US4467457A/en
Priority to DE19813148806 priority patent/DE3148806A1/de
Publication of JPS589286A publication Critical patent/JPS589286A/ja
Publication of JPS6348120B2 publication Critical patent/JPS6348120B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP56107689A 1980-12-12 1981-07-10 不揮発性半導体メモリ Granted JPS589286A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56107689A JPS589286A (ja) 1981-07-10 1981-07-10 不揮発性半導体メモリ
GB8136789A GB2089612B (en) 1980-12-12 1981-12-07 Nonvolatile semiconductor memory device
US06/329,059 US4467457A (en) 1980-12-12 1981-12-09 Nonvolatile semiconductor memory device
DE19813148806 DE3148806A1 (de) 1980-12-12 1981-12-10 Nicht-fluechtiger halbleiterspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56107689A JPS589286A (ja) 1981-07-10 1981-07-10 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS589286A JPS589286A (ja) 1983-01-19
JPS6348120B2 true JPS6348120B2 (enExample) 1988-09-27

Family

ID=14465465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56107689A Granted JPS589286A (ja) 1980-12-12 1981-07-10 不揮発性半導体メモリ

Country Status (1)

Country Link
JP (1) JPS589286A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1497210A (en) * 1975-05-13 1978-01-05 Ncr Co Matrix memory
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method

Also Published As

Publication number Publication date
JPS589286A (ja) 1983-01-19

Similar Documents

Publication Publication Date Title
KR100373223B1 (ko) 반도체장치
US5262984A (en) Non-volatile memory device capable of storing multi-state data
EP0293339B1 (en) Nonvolatile memory device with a high number of cycle programming endurance
US4761764A (en) Programmable read only memory operable with reduced programming power consumption
US5197028A (en) Semiconductor memory device with dual reference elements
US6281716B1 (en) Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not
US4612630A (en) EEPROM margin testing design
EP0255963B1 (en) Nonvolatile semiconductor memory including means for detecting completion of writing operation
US6337825B2 (en) Semiconductor memory device
EP0025155B1 (en) Nonvolatile semiconductor memory device
KR900004325B1 (ko) 프로그램 가능한 판독전용 메모리용 센스증폭기
US5198997A (en) Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
JPH0467280B2 (enExample)
US6331949B1 (en) Circuit for storing and latching defective address data for a nonvolatile semiconductor memory device having redundant function
US4374430A (en) Semiconductor PROM device
US5051956A (en) Memory cell having means for maintaining the gate and substrate at the same potential
JPH02187994A (ja) 半導体記憶装置
JPH0679440B2 (ja) 不揮発性半導体記憶装置
US5293344A (en) Write circuit for non-volatile memory device
JPS6348120B2 (enExample)
JPH0519240B2 (enExample)
US6442069B1 (en) Differential signal path for high speed data transmission in flash memory
JP3119531B2 (ja) 半導体記憶装置
JPS6038000B2 (ja) 不揮発性半導体メモリ
JP3864528B2 (ja) 半導体記憶装置