JPS5892242A - セラミツク多層基板 - Google Patents
セラミツク多層基板Info
- Publication number
- JPS5892242A JPS5892242A JP19113981A JP19113981A JPS5892242A JP S5892242 A JPS5892242 A JP S5892242A JP 19113981 A JP19113981 A JP 19113981A JP 19113981 A JP19113981 A JP 19113981A JP S5892242 A JPS5892242 A JP S5892242A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- metallized
- pad
- substrate
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 238000005219 brazing Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000003475 lamination Methods 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000010304 firing Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19113981A JPS5892242A (ja) | 1981-11-27 | 1981-11-27 | セラミツク多層基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19113981A JPS5892242A (ja) | 1981-11-27 | 1981-11-27 | セラミツク多層基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5892242A true JPS5892242A (ja) | 1983-06-01 |
JPS636143B2 JPS636143B2 (enrdf_load_stackoverflow) | 1988-02-08 |
Family
ID=16269530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19113981A Granted JPS5892242A (ja) | 1981-11-27 | 1981-11-27 | セラミツク多層基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5892242A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61236148A (ja) * | 1985-04-11 | 1986-10-21 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | メタライゼーシヨン・パターンへのろう付け方法 |
JPS6263454A (ja) * | 1985-09-14 | 1987-03-20 | Narumi China Corp | 半導体装置用容器及びその製造方法 |
JPS62211805A (ja) * | 1986-03-12 | 1987-09-17 | 富士通株式会社 | グリ−ンシ−ト多層セラミツク基板の製造方法 |
JPH0388354A (ja) * | 1989-08-31 | 1991-04-12 | Ibiden Co Ltd | 半導体パッケージ |
JPH0846120A (ja) * | 1995-08-09 | 1996-02-16 | Hitachi Ltd | 樹脂封止型半導体装置およびその製造方法 |
JPH0846121A (ja) * | 1995-08-09 | 1996-02-16 | Hitachi Ltd | 樹脂封止型半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5433422U (enrdf_load_stackoverflow) * | 1977-08-10 | 1979-03-05 | ||
JPS5473529A (en) * | 1977-11-24 | 1979-06-12 | Fujitsu Ltd | Bonding pad forming method for bubble memory chip |
JPS5547779U (enrdf_load_stackoverflow) * | 1978-09-25 | 1980-03-28 | ||
JPS5523190Y2 (enrdf_load_stackoverflow) * | 1975-09-23 | 1980-06-02 | ||
JPS5778651U (enrdf_load_stackoverflow) * | 1980-10-30 | 1982-05-15 |
-
1981
- 1981-11-27 JP JP19113981A patent/JPS5892242A/ja active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5523190Y2 (enrdf_load_stackoverflow) * | 1975-09-23 | 1980-06-02 | ||
JPS5433422U (enrdf_load_stackoverflow) * | 1977-08-10 | 1979-03-05 | ||
JPS5473529A (en) * | 1977-11-24 | 1979-06-12 | Fujitsu Ltd | Bonding pad forming method for bubble memory chip |
JPS5547779U (enrdf_load_stackoverflow) * | 1978-09-25 | 1980-03-28 | ||
JPS5778651U (enrdf_load_stackoverflow) * | 1980-10-30 | 1982-05-15 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61236148A (ja) * | 1985-04-11 | 1986-10-21 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | メタライゼーシヨン・パターンへのろう付け方法 |
JPS6263454A (ja) * | 1985-09-14 | 1987-03-20 | Narumi China Corp | 半導体装置用容器及びその製造方法 |
JPS62211805A (ja) * | 1986-03-12 | 1987-09-17 | 富士通株式会社 | グリ−ンシ−ト多層セラミツク基板の製造方法 |
JPH0388354A (ja) * | 1989-08-31 | 1991-04-12 | Ibiden Co Ltd | 半導体パッケージ |
JPH0846120A (ja) * | 1995-08-09 | 1996-02-16 | Hitachi Ltd | 樹脂封止型半導体装置およびその製造方法 |
JPH0846121A (ja) * | 1995-08-09 | 1996-02-16 | Hitachi Ltd | 樹脂封止型半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS636143B2 (enrdf_load_stackoverflow) | 1988-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5000809B2 (ja) | 多層印刷回路基板及びその製造方法並びに多層印刷回路基板を利用したbga半導体パッケージ | |
TW571371B (en) | Method for fabricating semiconductor package | |
JP4332162B2 (ja) | 配線基板の製造方法 | |
WO2005071744A1 (ja) | 積層型電子部品および積層型電子部品の実装構造 | |
JPS5892242A (ja) | セラミツク多層基板 | |
JPH10335823A (ja) | 積層セラミック回路基板及びその製造方法 | |
JP3155565B2 (ja) | プリント配線板の製造方法 | |
JPH08236938A (ja) | 入出力ピン付き銅ガラスセラミック多層配線基板、入出力ピン付き銅ガラスセラミック多層配線基板の製造方法、および入出力ピン付き銅ガラスセラミック多層配線基板実装構造体 | |
JPS6364079B2 (enrdf_load_stackoverflow) | ||
JPS5824958B2 (ja) | 多重貫通孔を設けた多層印刷配線板の製造方法 | |
JP2002076628A (ja) | ガラスセラミック基板の製造方法 | |
JP2002368426A (ja) | 積層型セラミック電子部品およびその製造方法ならびに電子装置 | |
JP3117967B2 (ja) | 多層セラミックス基板 | |
JPS582278A (ja) | 多層セラミツク基板の製造方法 | |
JP2002118194A (ja) | フリップチップ用セラミック多層基板の製造方法 | |
JPH0918144A (ja) | ガラスセラミック多層配線基板及びその製造方法並びにガラスセラミック多層配線基板実装構造体 | |
JP3665036B2 (ja) | プリント配線板の製造方法及びプリント配線板 | |
JPH05183272A (ja) | 多層電子部品搭載用基板の製造方法 | |
KR100801949B1 (ko) | 배선 기판의 제조 방법 | |
JPH04199759A (ja) | プリント基板 | |
JPH0636601Y2 (ja) | 回路基板 | |
JP2001007453A (ja) | プリント配線基板及びその製造方法 | |
JP2006041225A (ja) | セラミック配線板の製造方法 | |
JPH1168326A (ja) | 多層配線基板の製造方法 | |
JPS62125692A (ja) | グリ−ンシ−トのvia充填法 |