JPS5886742A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5886742A JPS5886742A JP56184776A JP18477681A JPS5886742A JP S5886742 A JPS5886742 A JP S5886742A JP 56184776 A JP56184776 A JP 56184776A JP 18477681 A JP18477681 A JP 18477681A JP S5886742 A JPS5886742 A JP S5886742A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- scribing line
- al2o3
- wirings
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000872 buffer Substances 0.000 abstract 1
- 239000007853 buffer solution Substances 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 239000011856 silicon-based particle Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56184776A JPS5886742A (ja) | 1981-11-18 | 1981-11-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56184776A JPS5886742A (ja) | 1981-11-18 | 1981-11-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5886742A true JPS5886742A (ja) | 1983-05-24 |
| JPS6242383B2 JPS6242383B2 (enExample) | 1987-09-08 |
Family
ID=16159104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56184776A Granted JPS5886742A (ja) | 1981-11-18 | 1981-11-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5886742A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387743A (ja) * | 1986-09-30 | 1988-04-19 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4916393A (enExample) * | 1972-03-29 | 1974-02-13 | ||
| JPS5270771A (en) * | 1975-12-10 | 1977-06-13 | Toshiba Corp | Position matching method |
| JPS5648147A (en) * | 1979-09-26 | 1981-05-01 | Nec Corp | Semiconductor device |
-
1981
- 1981-11-18 JP JP56184776A patent/JPS5886742A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4916393A (enExample) * | 1972-03-29 | 1974-02-13 | ||
| JPS5270771A (en) * | 1975-12-10 | 1977-06-13 | Toshiba Corp | Position matching method |
| JPS5648147A (en) * | 1979-09-26 | 1981-05-01 | Nec Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387743A (ja) * | 1986-09-30 | 1988-04-19 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6242383B2 (enExample) | 1987-09-08 |
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