JPS5886742A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5886742A
JPS5886742A JP56184776A JP18477681A JPS5886742A JP S5886742 A JPS5886742 A JP S5886742A JP 56184776 A JP56184776 A JP 56184776A JP 18477681 A JP18477681 A JP 18477681A JP S5886742 A JPS5886742 A JP S5886742A
Authority
JP
Japan
Prior art keywords
layer
scribing line
al2o3
wirings
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56184776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242383B2 (enExample
Inventor
Kazuya Kauchi
加内　一也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56184776A priority Critical patent/JPS5886742A/ja
Publication of JPS5886742A publication Critical patent/JPS5886742A/ja
Publication of JPS6242383B2 publication Critical patent/JPS6242383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P54/00—

Landscapes

  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)
JP56184776A 1981-11-18 1981-11-18 半導体装置の製造方法 Granted JPS5886742A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56184776A JPS5886742A (ja) 1981-11-18 1981-11-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56184776A JPS5886742A (ja) 1981-11-18 1981-11-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5886742A true JPS5886742A (ja) 1983-05-24
JPS6242383B2 JPS6242383B2 (enExample) 1987-09-08

Family

ID=16159104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56184776A Granted JPS5886742A (ja) 1981-11-18 1981-11-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5886742A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387743A (ja) * 1986-09-30 1988-04-19 Mitsubishi Electric Corp 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916393A (enExample) * 1972-03-29 1974-02-13
JPS5270771A (en) * 1975-12-10 1977-06-13 Toshiba Corp Position matching method
JPS5648147A (en) * 1979-09-26 1981-05-01 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916393A (enExample) * 1972-03-29 1974-02-13
JPS5270771A (en) * 1975-12-10 1977-06-13 Toshiba Corp Position matching method
JPS5648147A (en) * 1979-09-26 1981-05-01 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387743A (ja) * 1986-09-30 1988-04-19 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6242383B2 (enExample) 1987-09-08

Similar Documents

Publication Publication Date Title
US5583074A (en) Semiconductor circuit
JPS5886742A (ja) 半導体装置の製造方法
JPH06326091A (ja) 半導体素子のフィールド酸化膜の形成方法
JP2716156B2 (ja) 半導体装置の製造方法
JPS59141222A (ja) 半導体装置の製造方法
JPH06120211A (ja) 半導体装置の製造方法
JPH0237747A (ja) 半導体装置の製造方法
US6352908B1 (en) Method for reducing nitride residue in a LOCOS isolation area
JPH07161684A (ja) 半導体装置の製造方法
JP2702010B2 (ja) 半導体装置の製造方法
JPH09219535A (ja) 発光素子の製造方法
JPH03248429A (ja) 半導体装置の製造方法
JPH0680739B2 (ja) 半導体装置の製造方法
JPH04356944A (ja) 半導体装置およびその製造方法
JPH11162845A (ja) 半導体素子のマスク製造方法
JPH0748518B2 (ja) 半導体装置の製造方法
JPH07130732A (ja) 半導体装置及びその製造方法
JP2720657B2 (ja) 半導体装置及びその製造方法
KR920007342B1 (ko) 반도체 소자의 제조방법
JP3003235B2 (ja) 半導体装置の製造方法
JPS63271957A (ja) 多層配線形成方法
JPH01286444A (ja) 半導体装置
KR950006994A (ko) 반도체 소자의 비아 플러그 형성방법
JPH0222844A (ja) 半導体集積回路
JPS63308346A (ja) 半導体装置