JPS5877231A - レジストパタ−ンのテ−パ形成方法 - Google Patents

レジストパタ−ンのテ−パ形成方法

Info

Publication number
JPS5877231A
JPS5877231A JP56175672A JP17567281A JPS5877231A JP S5877231 A JPS5877231 A JP S5877231A JP 56175672 A JP56175672 A JP 56175672A JP 17567281 A JP17567281 A JP 17567281A JP S5877231 A JPS5877231 A JP S5877231A
Authority
JP
Japan
Prior art keywords
pattern
resist
taper
irregular parts
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56175672A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0145739B2 (enExample
Inventor
Takashi Ookoda
大古田　隆司
Akira Eda
昭 江田
Hideki Nishida
西田　秀来
Hisao Nozawa
野沢　悠夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56175672A priority Critical patent/JPS5877231A/ja
Publication of JPS5877231A publication Critical patent/JPS5877231A/ja
Publication of JPH0145739B2 publication Critical patent/JPH0145739B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP56175672A 1981-11-04 1981-11-04 レジストパタ−ンのテ−パ形成方法 Granted JPS5877231A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56175672A JPS5877231A (ja) 1981-11-04 1981-11-04 レジストパタ−ンのテ−パ形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56175672A JPS5877231A (ja) 1981-11-04 1981-11-04 レジストパタ−ンのテ−パ形成方法

Publications (2)

Publication Number Publication Date
JPS5877231A true JPS5877231A (ja) 1983-05-10
JPH0145739B2 JPH0145739B2 (enExample) 1989-10-04

Family

ID=16000211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56175672A Granted JPS5877231A (ja) 1981-11-04 1981-11-04 レジストパタ−ンのテ−パ形成方法

Country Status (1)

Country Link
JP (1) JPS5877231A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60135949A (ja) * 1983-12-23 1985-07-19 Matsushita Electric Works Ltd 光成形体の製造方法
JPS61111533A (ja) * 1984-11-05 1986-05-29 Mitsubishi Electric Corp 感光性樹脂のパタ−ン形成方法
JPH01243436A (ja) * 1988-03-25 1989-09-28 Nippon Telegr & Teleph Corp <Ntt> 感光性有機樹脂膜の形成方法
WO1995010849A1 (en) * 1993-10-13 1995-04-20 Oki Electric Industry Co., Ltd. Pattern and method for evaluating focal point
EP1034457A4 (en) * 1997-11-24 2001-05-02 Asml Masktools Bv METHOD FOR ADJUSTING THE EDGES OF FINE DETAILS USING A HALF-TONE OPTICAL MASK
JP2002040623A (ja) * 2000-07-26 2002-02-06 Ricoh Opt Ind Co Ltd 濃度分布マスクの製造方法
JP2005257712A (ja) * 2004-03-09 2005-09-22 Hoya Corp グレートーンマスク及びその製造方法
JP2009230017A (ja) * 2008-03-25 2009-10-08 Omron Corp レジスト露光方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60135949A (ja) * 1983-12-23 1985-07-19 Matsushita Electric Works Ltd 光成形体の製造方法
JPS61111533A (ja) * 1984-11-05 1986-05-29 Mitsubishi Electric Corp 感光性樹脂のパタ−ン形成方法
JPH01243436A (ja) * 1988-03-25 1989-09-28 Nippon Telegr & Teleph Corp <Ntt> 感光性有機樹脂膜の形成方法
WO1995010849A1 (en) * 1993-10-13 1995-04-20 Oki Electric Industry Co., Ltd. Pattern and method for evaluating focal point
EP1034457A4 (en) * 1997-11-24 2001-05-02 Asml Masktools Bv METHOD FOR ADJUSTING THE EDGES OF FINE DETAILS USING A HALF-TONE OPTICAL MASK
JP2002040623A (ja) * 2000-07-26 2002-02-06 Ricoh Opt Ind Co Ltd 濃度分布マスクの製造方法
JP2005257712A (ja) * 2004-03-09 2005-09-22 Hoya Corp グレートーンマスク及びその製造方法
JP2009230017A (ja) * 2008-03-25 2009-10-08 Omron Corp レジスト露光方法

Also Published As

Publication number Publication date
JPH0145739B2 (enExample) 1989-10-04

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