JPS5868992A - 半導体発光素子装置 - Google Patents

半導体発光素子装置

Info

Publication number
JPS5868992A
JPS5868992A JP56166378A JP16637881A JPS5868992A JP S5868992 A JPS5868992 A JP S5868992A JP 56166378 A JP56166378 A JP 56166378A JP 16637881 A JP16637881 A JP 16637881A JP S5868992 A JPS5868992 A JP S5868992A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
resin
resin base
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56166378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244876B2 (enrdf_load_stackoverflow
Inventor
Iwao Matsumoto
松本　岩夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56166378A priority Critical patent/JPS5868992A/ja
Publication of JPS5868992A publication Critical patent/JPS5868992A/ja
Publication of JPS6244876B2 publication Critical patent/JPS6244876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
JP56166378A 1981-10-20 1981-10-20 半導体発光素子装置 Granted JPS5868992A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56166378A JPS5868992A (ja) 1981-10-20 1981-10-20 半導体発光素子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56166378A JPS5868992A (ja) 1981-10-20 1981-10-20 半導体発光素子装置

Publications (2)

Publication Number Publication Date
JPS5868992A true JPS5868992A (ja) 1983-04-25
JPS6244876B2 JPS6244876B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=15830299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56166378A Granted JPS5868992A (ja) 1981-10-20 1981-10-20 半導体発光素子装置

Country Status (1)

Country Link
JP (1) JPS5868992A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677614B1 (en) * 1992-12-17 2004-01-13 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US6808950B2 (en) * 1992-12-17 2004-10-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
JP2011044718A (ja) * 2002-12-06 2011-03-03 Cree Inc １つの小さい設置面積を有するｌｅｄパッケージダイ
WO2012169147A1 (ja) * 2011-06-07 2012-12-13 パナソニック株式会社 光半導体パッケージおよびその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677614B1 (en) * 1992-12-17 2004-01-13 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US6808950B2 (en) * 1992-12-17 2004-10-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7094619B2 (en) 1992-12-17 2006-08-22 Kabushiki Kaisha Toshiba Method of fabricating a light emitting device
US7288795B2 (en) 1992-12-17 2007-10-30 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7297984B2 (en) 1992-12-17 2007-11-20 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7315046B2 (en) 1992-12-17 2008-01-01 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
JP2011044718A (ja) * 2002-12-06 2011-03-03 Cree Inc １つの小さい設置面積を有するｌｅｄパッケージダイ
WO2012169147A1 (ja) * 2011-06-07 2012-12-13 パナソニック株式会社 光半導体パッケージおよびその製造方法
JPWO2012169147A1 (ja) * 2011-06-07 2015-02-23 パナソニック株式会社 光半導体パッケージおよびその製造方法
US9018658B2 (en) 2011-06-07 2015-04-28 Panasonic Intellectual Property Management Co., Ltd. Optical semiconductor package and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6244876B2 (enrdf_load_stackoverflow) 1987-09-22

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