JPS5868992A - Semiconductor light-emitting element device - Google Patents
Semiconductor light-emitting element deviceInfo
- Publication number
- JPS5868992A JPS5868992A JP56166378A JP16637881A JPS5868992A JP S5868992 A JPS5868992 A JP S5868992A JP 56166378 A JP56166378 A JP 56166378A JP 16637881 A JP16637881 A JP 16637881A JP S5868992 A JPS5868992 A JP S5868992A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- resin
- resin base
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 51
- 239000011347 resin Substances 0.000 claims abstract description 51
- 238000007789 sealing Methods 0.000 claims abstract description 26
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 abstract description 8
- 238000003754 machining Methods 0.000 abstract 2
- 238000000465 moulding Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000011282 treatment Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、リードフレーム形ステムにＬＥＩ）（光発光
ダイオード）を取付けた半導体発光素子装置に関し、さ
らに詳しくは製造カー容易で照明度が高く、指向特性上
好ましい半導体発光素子装置に関従来、半導体発光素子
装置は、セラミックからなるステム本体にリードを貫装
したステムを用い、個別ステムごとに発光素子の取付す
などの操作を行っていたが、作業工程が複雑で自動化す
ることが困難であった。またリードフレーム形のステム
を用いたものは、自動化には適するが、セラミックから
なるステム本体を取付けると七が製造上器しいため、発
光素子装置の照明度を向上させ′ることかできなかつ牟
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting element device in which an LEI (light emitting diode) is attached to a lead frame type stem, and more specifically, the present invention relates to a semiconductor light emitting element device that is easy to manufacture, provides high illumination, and is preferable in terms of directional characteristics. Regarding device devices Conventionally, semiconductor light emitting device devices have used stems with leads inserted through the stem body made of ceramic, and operations such as attaching light emitting devices to each individual stem have been performed, but the work process has been complicated. It was difficult to automate. In addition, those using a lead frame type stem are suitable for automation, but it is difficult to manufacture when a stem body made of ceramic is attached, and it is impossible to improve the illumination level of the light emitting device. .
そこで本発明者は、このような欠点を一解消するため、
特願昭５５−９６７５３号において、新規な半導体発光
素子装置を提案した。この装置番、第１図の斜視図と第
２図の一部破断正面図とにより説明すると、先゛ず、棒
状基体１０には所定間隔で支持リード１２ａ、１２ｂ、
の対が多数個分岐している。支持リード１２ａ、１２ｂ
の先端部には先端面１２ｃ、１２ｄが外部に突出するよ
うに゛樹脂基台１４が成形され、て嵌着されている。一
方の支持リード１２ａの先端而１２ｃには半導体発光素
子１５がマウントされておりく半導体発光素子１５はボ
ンディングワイヤ１６によって他方の支持リード１２ｂ
の先端面１２ｄに接続されている。最後に半導体素〒１
５とボンディングワイヤ１６とは、透明又は不透明なエ
ポキシ樹脂などからなる樹脂封止体１７によって、樹脂
基台１４の封止面１４ｃ上に封止される。このように構
成きれた半導体発光素子装置によれば、リードクレーム
形ステムであるため取扱いが容易で自動化に適し、樹脂
基台の反射効果によって装置の照明度が高いなど数々の
利点を挙げることができる。Therefore, in order to eliminate such drawbacks, the inventors of the present invention
In Japanese Patent Application No. 55-96753, a novel semiconductor light emitting device was proposed. To explain this device number using a perspective view in FIG. 1 and a partially cutaway front view in FIG.
There are many pairs of branches. Support leads 12a, 12b
A resin base 14 is molded and fitted onto the distal end of the resin base 14 so that the distal end surfaces 12c and 12d protrude to the outside. A semiconductor light emitting device 15 is mounted on the tip 12c of one support lead 12a.The semiconductor light emitting device 15 is connected to the other support lead 12b by a bonding wire 16.
is connected to the distal end surface 12d. Finally, semiconductor element〒1
5 and the bonding wire 16 are sealed on the sealing surface 14c of the resin base 14 with a resin sealing body 17 made of transparent or opaque epoxy resin or the like. The semiconductor light emitting device device configured as described above has a number of advantages, such as being easy to handle and suitable for automation because of the lead claim type stem, and providing high illumination of the device due to the reflective effect of the resin base. can.
しかしながら、この装置では、発光素子が装着される支
持リードの先端面１２ｃ 、 １２ｄに樹脂基台の成形
によって成形パリが発生するという問題がある。現在の
成形技術では成形パリの発生を有効に防止する手段はな
いので、この問題を回避す４には、成形パリが支持リー
ドの先端面まで到達しない高さまで、支持リードを゛樹
脂基台から突出させなければならない。ところが、球冠
状の樹脂封止体１７の球面の中心は、封止方法や封止樹
脂などによって異なるが、通常第２図のＡ点のように、
発光素子より下に位置する場合が多く、支持ＩＪ−ドを
樹脂基台から高く突出させればさせる程、発光素子１５
の位置がＡ点から離れて樹脂封止体１７のレイズ効果が
損なわれて、装装置の照明度が低くなり指向特性上好ま
しくないとい゛う欠点があ゛る。However, this device has a problem in that molding cracks occur on the tip surfaces 12c and 12d of the support leads to which the light emitting elements are mounted due to molding of the resin base. Current molding technology does not have any means to effectively prevent the occurrence of molding flashes, so to avoid this problem, move the support lead from the resin base to a height where molding flashes do not reach the tip of the support lead. It has to stand out. However, although the center of the spherical surface of the spherical crown-shaped resin sealing body 17 varies depending on the sealing method and sealing resin, it is usually located at point A in FIG.
It is often located below the light emitting element, and the higher the support IJ-do is made to protrude from the resin base, the more the light emitting element 15
The disadvantage is that since the position of the point A is far from the point A, the raising effect of the resin sealing body 17 is impaired, and the illumination intensity of the mounting device becomes low, which is unfavorable in terms of directivity.
また、支持リード１２ａ、１２ｂの外部リードと々る部
分には、半田付けに・適するように一８ｎめっき等がさ
れ、−力支持リードの先端面１２ｃ、１２ｄには、マウ
ントやワイヤボンディングに適するよ′うにＡｇめっき
等がされるなど、支持＋ｊ−ドの部分によって異なった
処理等を施こすことが多い。このようり場合、外部リー
ドに処理を施こすには−・方の先端面に部分的保護処理
等の手段を加える必要がある。、
従って本発明は、特願昭５５−９６７５３号の半導体発
光素子装置を改良する発明であって、本発明の目的は発
光素子袋−面である支持リードの先端面がパリなどの樹
脂膜で被覆されない構造とすること、発光素子が樹脂封
止体の球面の中心近く指向特性上望ましい位置に装着で
きるような構造とすること、また支持リードの部分によ
って異なった処」１１ｊ ｆ、するに適する構造とする
ことなどの半導体発光素子装置を提供することにある。In addition, the external lead contact portions of the support leads 12a and 12b are plated with 18N to make them suitable for soldering, and the tip surfaces 12c and 12d of the force support leads are plated with 18N plating, etc., to make them suitable for mounting and wire bonding. Different treatments, such as Ag plating, etc., are often applied depending on the supporting +J-de part. In such a case, in order to process the external lead, it is necessary to add a means such as partial protection treatment to the - side tip surface. Therefore, the present invention is an invention for improving the semiconductor light emitting device device disclosed in Japanese Patent Application No. 55-96753, and an object of the present invention is to improve the semiconductor light emitting device device disclosed in Japanese Patent Application No. 55-96753. The structure should not be covered, and the structure should be such that the light emitting element can be mounted at a desired position near the center of the spherical surface of the resin sealing body in terms of directional characteristics. An object of the present invention is to provide a semiconductor light emitting element device having a structure.
本発明の一実施例の装置は、第３図の斜視図と第４図の
部分破訓正呪（示した。An apparatus according to an embodiment of the present invention is shown in a perspective view in FIG. 3 and in a partially broken perspective view in FIG.
本発明の半導体発光素子装置は、前述した特願昭５５−
９６７５３号のそれと同、しく、棒状基体１．０に多数
個の支持ＩＪ ’ ド１２ａ、１２ｂ’ｉｉ”所定間
隔で所定方向に分岐させたステム１１と、前記支持リー
ド１２＆ 、 １，２ｂの先端部に前記支持リードの先
端面１２ｃ、１２ｂが露出するように成形した樹脂基台
１４と、前記支持リードの先端面１２ｃ、１２ｄ に
装着された発光素子１５と、該発光素子１５を前記樹脂
基台１４上に封止した樹脂封止体１７とを具備する。The semiconductor light emitting device device of the present invention is disclosed in the above-mentioned Japanese Patent Application No.
Similar to that of No. 96753, a rod-shaped base 1.0 has a stem 11 branched in a predetermined direction at predetermined intervals, and the tips of the support leads 12&, 1, 2b. A resin base 14 is molded so that the tip surfaces 12c and 12b of the support leads are exposed at the top, a light emitting element 15 is attached to the tip surfaces 12c and 12d of the support lead, and the light emitting element 15 is attached to the resin base. A resin sealing body 17 sealed on a table 14 is provided.
本発明の半導体発光素子装置が、特願昭５５−９６７５
３号のそれと対照して特徴とするところは、支持リード
１２ａ 、 １２ｂの先端部に成形した樹脂基台１４の
一晶ヲ切削加工して形成した樹脂１台の封止面１４ｃを
有し、かつ樹脂基台１４中に埋め込まれた支持リード１
２ａ 、 １２ｂの先端部をも同時に切削加工して樹脂
基台の封止面１４ｃと段差なく形成させた支持リードの
先端ｍ１２ｃ、１２ｄを有する点にある。゛
樹脂基台１４を成形する樹脂は、ガラス繊維強化ポリエ
チレンテレフタレートの如く熱可塑性樹脂或は不飽和ポ
リエステル樹脂プリミックスの如く熱硬化性樹脂で、白
色女ど半導体発光素子の出す光の反射効果が高く、耐熱
温度が高く熱による変色がほとんどなく、樹脂封止体１
７とのなじみが良く、シかもめっき液による劣化が少な
いものであれば如何なるものでもよい。特に熱硬化性樹
脂、は、装置の半田付は時の加熱温度２６０℃に耐える
とともに、樹脂基台１４の高速切削加工に耐える上で好
ましい。樹脂基台の成形は射出、トランスファ、圧縮、
注型など適宜の成形法が選択できる。The semiconductor light emitting device device of the present invention is disclosed in Japanese Patent Application No. 55-9675.
In contrast to No. 3, it has a resin sealing surface 14c formed by cutting a single crystal of the resin base 14 molded at the tips of the support leads 12a and 12b. and support leads 1 embedded in the resin base 14.
The tip ends of the support leads m12c and 12d are formed by cutting the tips of the support leads 2a and 12b at the same time so that they are flush with the sealing surface 14c of the resin base.゛The resin used to mold the resin base 14 is a thermoplastic resin such as glass fiber reinforced polyethylene terephthalate or a thermosetting resin such as an unsaturated polyester resin premix, which has a reflective effect on the light emitted by the white semiconductor light emitting device. High temperature resistance, almost no discoloration due to heat, resin molded body 1
Any material may be used as long as it is compatible with 7 and is less likely to be deteriorated by the plating solution. In particular, thermosetting resin is preferable because it can withstand the heating temperature of 260° C. during soldering of the device and can withstand high-speed cutting of the resin base 14. Molding of the resin base is done by injection, transfer, compression,
An appropriate molding method such as casting can be selected.
樹脂基台の切削加工は、刃物による切削、砥石による切
削が採用できる。切削加工によって支持リードの先端面
１２ｃ、１２ｄを露出させるので、金型構造、金型精度
、成形条件などによって生ずるこの部分の成形パリヲ顧
慮することなく、如何なる場合でも樹脂膜に被〜されな
い先−面１２ｃ、１２ｄｌ＃ｊて、発光素子１５の装着
を確実にすることができる。For cutting the resin base, cutting with a knife or cutting with a grindstone can be employed. Since the tip surfaces 12c and 12d of the support leads are exposed by cutting, the tips that will not be covered with the resin film under any circumstances are ignored, without considering the molding parity of these parts caused by the mold structure, mold precision, molding conditions, etc. Mounting of the light emitting element 15 can be ensured by the surfaces 12c and 12dl#j.
丑た、支持リードの先端面１２ｃ、イ２ｄにマウント或
はワイヤボン−ディングに適する゛ようにＡｇめっき等
ｔｌｆｍこし、支持リードの外部リードとなる部外に半
［↓］付け〆適するようにＳｎめっき等を施こすなど、
異なった処理をする場合には、外部リードの処理をした
後切削加工すれば先端面の部分保護処理等の手段が必要
でなくなる。In addition, the tip surfaces 12c and 2d of the support leads are coated with Ag plating or the like suitable for mounting or wire bonding, and the outside of the support leads that will become the external leads is semi-plated with Sn. Applying plating etc.
If a different treatment is to be applied, cutting after the external lead treatment eliminates the need for means such as partial protection treatment of the tip end surface.
そしてまた、透明又は不透明エポキシ樹脂などからなる
樹脂封止体１７を球冠状に封止した場合、球面の中心Ａ
が半導体発光素子１５の下に位置することが多いが、発
光素子１５全装着する外部リードの先端面１２ｃと封止
面１４ｃとが段差なく形成されることにより、発光素子
１５の位置を球面の中心Ａ点に近づけることができる。Furthermore, when the resin sealing body 17 made of transparent or opaque epoxy resin is sealed in a spherical crown shape, the center A of the spherical surface
is often located below the semiconductor light emitting element 15, but since the end surface 12c of the external lead to which all the light emitting elements 15 are attached and the sealing surface 14c are formed without any difference in level, the position of the light emitting element 15 can be placed on a spherical surface. It can be brought closer to the center point A.
その結果、樹脂封止体のレンズ効果が損なわれず、装置
の照明度を向上させることができ指向特性上好ましい効
果が得られる。As a result, the lens effect of the resin sealing body is not impaired, the illumination intensity of the device can be improved, and favorable effects in terms of directivity characteristics can be obtained.
次に本発明の半導体発光素子装置の製造方法の一例につ
いて第５゛〜７図を参照して説明する。Next, an example of the method for manufacturing the semiconductor light emitting device device of the present invention will be described with reference to FIGS. 5-7.
所定の肉厚を有する適宜材質の金属条から適宜方法によ
り第５図のリードフレームを加工する。The lead frame shown in FIG. 5 is fabricated from a metal strip having a predetermined wall thickness and made of an appropriate material by an appropriate method.
このリードフレームは、−直鎖ｌｓア示した中心線で切
断すれば、一対の゛ステムを得ることができる。A pair of stems can be obtained by cutting this lead frame along the center line indicated by the straight line.
切断されたリードフレームは、夫々棒状基体１０゜１０
′と、それに分岐させた多数個の支持リード１２ａ。The cut lead frames each have a rod-shaped base of 10° and 10°.
', and a large number of support leads 12a branched from it.
１２ｂ ’７１２’ ａ 、 １２’ ｂとからなって
いる。そして、ステム製造の最終工程で、中心線に沿っ
て切断されたときに、切断面１２ｃ、１２ｄ（第４図参
照）が発光素子１５マウント面及びワイヤボンディング
面、す々わち発光素子装着面となるのである。換言すれ
は、゛ このリードフレームは一対の支持り一゛ド１２
ａ、１２ｂと支持リード１２’ａ、１２’ｂとが、夫々
の先端面を突き合わせた形で一体に連結されたものであ
る。It consists of 12b'712'a and 12'b. In the final process of manufacturing the stem, when the stem is cut along the center line, the cut surfaces 12c and 12d (see FIG. 4) are the light emitting element 15 mounting surface and the wire bonding surface, that is, the light emitting element mounting surface. It becomes. In other words, ``This lead frame has a pair of supports 12
a, 12b and support leads 12'a, 12'b are integrally connected with their respective tip surfaces butted against each other.
次に、第６図に示す如く、突き合わされた支持リード先
端面を封入して、一対の樹脂基台１４ａ、１４ｂ（第７
図参照）を一体にした樹脂基台１４′を成形した後、第
７図に示す如く、一点鎖線で示した中心線に沿って切断
砥石により切断して一対のステム１１，１１”ｅ分離さ
せる。このようにして一対のステム１１’、１１’の樹
脂基台１４ａ、１４ｂ （Ｄ樹脂封止面１４ｃと支持リ
ードの先端面１２ｃ、１２ｂとは段差なく切削加工によ
り露出゛させることができる。Next, as shown in FIG.
After molding the resin base 14' that integrates the resin base 14' (see figure), as shown in Fig. 7, the pair of stems 11, 11''e are separated by cutting with a cutting wheel along the center line indicated by the dashed line. In this way, the resin bases 14a, 14b of the pair of stems 11', 11' (the D resin sealing surface 14c and the tip surfaces 12c, 12b of the support leads can be exposed by cutting without any difference in level).
そして一体の樹脂基台１４′を成形した直後に全体ｆ：
ｓｎめっき浴し、その時点で露出している外部リードの
めっきをすれば、樹脂基台１４′に封入さ！
れている支持リード先端面はＳｎめっきに対して保護さ
れ、Ｓｎめっき後中心線に沿って切断し先端面を露出さ
せた汝、その部分に別のＡｇめっきを施こせばめっき処
理工程が簡略化される。Immediately after molding the integral resin base 14', the whole f:
After taking a sn plating bath and plating the external leads exposed at that point, they are sealed in the resin base 14'! The tip surface of the supporting lead is protected from Sn plating, and if you cut it along the center line after Sn plating to expose the tip surface, you can simplify the plating process by applying another Ag plating to that part. be converted into
切断分離させた決々のステム１１，１１’は、発光素子
１５を装着した後、適宜粘度とした透明又は不透明液状
エポキシ樹脂上に、樹脂基台の封止面１４ｃを接触させ
て引き上げ、そのままの状態で硬化させれば、球冠状の
樹脂封止体１７が形成され、球面の中心Ａ点と発光素子
１５の位置と近づけ若しくは一致させることができて、
装置の照明度を向上させることかでき指向特性上好まし
い半導体発光素子装置ｒソが得られる。After the light-emitting element 15 is attached to the cut and separated stems 11 and 11', the sealing surface 14c of the resin base is brought into contact with a transparent or opaque liquid epoxy resin of an appropriate viscosity, and the stems 11 and 11' are pulled up as they are. If it is cured in this state, a spherical crown-shaped resin sealing body 17 is formed, and the center point A of the spherical surface can be brought close to or coincident with the position of the light emitting element 15,
A semiconductor light emitting device device which can improve the illumination intensity of the device and which is preferable in terms of directivity characteristics can be obtained.
第１図は従来の樹脂基台付リードフレーム形半導体発光
素子装置の斜視図、第２図は第１図の装置のｆ部破断正
面図、第３図は本発明の半導体発光素子装置の斜視図、
第４図は第一３図の不発」装置の一部破断正面図、第５
〜７図は本発明装置の一部」′が方法の説明図である。
１１．１１’ ・、ステム、１０．１０’棒状基体、１
２ａ、１２ｂ。
１２’ ａ、 １２’ ｂ−・・支持リード、１２ｃ、
１２ｄ−支持リード先端面、１４，１４ａ、１４ｂ、１
４’−・・樹脂基台、１４ｃ ・・・封止面、１５・・
・発光素子、１６・・・ボンディングワイヤ、１７・・
・（ＭＪ脂封止体、Ａ・・・樹脂封止体め球面の中心。
第１図
第２図
Ｑ
第４図
一′
第７図
第６図FIG. 1 is a perspective view of a conventional lead frame type semiconductor light emitting device device with a resin base, FIG. 2 is a cutaway front view at section f of the device in FIG. 1, and FIG. 3 is a perspective view of a semiconductor light emitting device device of the present invention. figure,
Figure 4 is a partially cutaway front view of the unexploded device shown in Figure 13, and Figure 5.
Figures 7 to 7 are a part of the apparatus of the present invention and are explanatory diagrams of the method. 11.11', stem, 10.10' rod-shaped base, 1
2a, 12b. 12'a, 12'b--Support lead, 12c,
12d - Support lead tip surface, 14, 14a, 14b, 1
4'--Resin base, 14c... Sealing surface, 15...
・Light emitting element, 16... Bonding wire, 17...
・(MJ resin sealing body, A...Center of the spherical surface of the resin sealing body. Fig. 1 Fig. 2 Q Fig. 4 1' Fig. 7 Fig. 6
Claims (1)
向に分岐させたステムと１、前記支持リードの先端部に
前記支持リードの先端面が露出するように成形した樹脂
基台と、前記支持、リードの先端面に装着された発光素
子と、該発光素子を前記樹脂基台上に封止した樹脂封止
体とを具備する半導体発光素子装置において、前記樹脂
基台に切削加工して形成させた封止面と、前記樹脂基台
の切削加工により該封止面と段差なく形成させた前記支
持リードの先端面とを有することを特徴とする半導体発
光−素子装置。1. A stem having a rod-shaped base having a plurality of support leads branched at predetermined intervals in a predetermined direction; 1. A resin base molded so that the tip end surface of the support lead is exposed at the tip end of the support lead; and the support. , in a semiconductor light emitting element device comprising a light emitting element mounted on the tip end surface of a lead, and a resin sealing body in which the light emitting element is sealed on the resin base, the light emitting element is formed by cutting on the resin base. 1. A semiconductor light emitting device device comprising: a sealing surface formed by cutting the resin base; and a tip end surface of the support lead formed without a step between the sealing surface and the sealing surface by cutting the resin base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166378A JPS5868992A (en) | 1981-10-20 | 1981-10-20 | Semiconductor light-emitting element device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166378A JPS5868992A (en) | 1981-10-20 | 1981-10-20 | Semiconductor light-emitting element device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868992A true JPS5868992A (en) | 1983-04-25 |
| JPS6244876B2 JPS6244876B2 (en) | 1987-09-22 |
Family
ID=15830299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56166378A Granted JPS5868992A (en) | 1981-10-20 | 1981-10-20 | Semiconductor light-emitting element device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868992A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677614B1 (en) * | 1992-12-17 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US6808950B2 (en) * | 1992-12-17 | 2004-10-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| JP2011044718A (en) * | 2002-12-06 | 2011-03-03 | Cree Inc | Led package die having single small footprint |
| WO2012169147A1 (en) * | 2011-06-07 | 2012-12-13 | パナソニック株式会社 | Optical semiconductor package and method for manufacturing same |
-
1981
- 1981-10-20 JP JP56166378A patent/JPS5868992A/en active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677614B1 (en) * | 1992-12-17 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US6808950B2 (en) * | 1992-12-17 | 2004-10-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US7094619B2 (en) | 1992-12-17 | 2006-08-22 | Kabushiki Kaisha Toshiba | Method of fabricating a light emitting device |
| US7288795B2 (en) | 1992-12-17 | 2007-10-30 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US7297984B2 (en) | 1992-12-17 | 2007-11-20 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US7315046B2 (en) | 1992-12-17 | 2008-01-01 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| JP2011044718A (en) * | 2002-12-06 | 2011-03-03 | Cree Inc | Led package die having single small footprint |
| WO2012169147A1 (en) * | 2011-06-07 | 2012-12-13 | パナソニック株式会社 | Optical semiconductor package and method for manufacturing same |
| JPWO2012169147A1 (en) * | 2011-06-07 | 2015-02-23 | パナソニック株式会社 | Optical semiconductor package and manufacturing method thereof |
| US9018658B2 (en) | 2011-06-07 | 2015-04-28 | Panasonic Intellectual Property Management Co., Ltd. | Optical semiconductor package and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244876B2 (en) | 1987-09-22 |
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