JPS62209Y2 - - Google Patents
Info
- Publication number
- JPS62209Y2 JPS62209Y2 JP1980072907U JP7290780U JPS62209Y2 JP S62209 Y2 JPS62209 Y2 JP S62209Y2 JP 1980072907 U JP1980072907 U JP 1980072907U JP 7290780 U JP7290780 U JP 7290780U JP S62209 Y2 JPS62209 Y2 JP S62209Y2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- tip
- emitting diode
- light emitting
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000000872 buffer Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
【考案の詳細な説明】
本案は発光ダイオードランプに係り、特に耐熱
特性に優れ製造しやすい発光ダイオードランプに
関する。[Detailed Description of the Invention] The present invention relates to a light emitting diode lamp, and particularly to a light emitting diode lamp that has excellent heat resistance and is easy to manufacture.
従来、リードフレームを基に製造した発光ダイ
オードランプは第１図のようにリード線１１，１
１の先端部１２，１２を大きくしたのち、この頂
部に発光ダイオード１５を載置固着し、金属細線
１６等で配線を施こして全体を透光性樹脂１７で
覆つてきた。しかし乍ら、このような形状のリー
ド線は価格低下を妨げ又耐熱特性が悪いという欠
点を有する。まず価格低下を妨げる理由を説明す
ると、リード線の表面には半田又は貴金属又はこ
れらを多層にしたメツキが施そされているが、こ
れは発光ダイオード１５の載置あるいは金属細線
１６のワイヤボンドに際して、これらの電気的固
着を良好ならしめるためと、リード線１１，１１
の半田付けを良好ならしめるためであるが、この
メツキ費用が高価である事が近年問題視され、特
に金や銀を用いたメツキに際しては必要個所のみ
に行なういわゆる部分メツキが検討されている。
しかし発光ダイオードランプに於ては、メツキす
ることにより光の反射率が向上する利点もあるの
で、透光性樹脂１７で覆われる部分は全てメツキ
しているが、この先端部１２，１２が大きくなつ
ているためにそれだけ表面積が大きく、部分メツ
キによる価格低下はあまり期待できない。次に耐
熱特性について説明すると、リード線１１，１１
に駆動回路等を接続するため半田付をしようとす
ると、半田付の際の熱は、リード線１１，１１は
銅や鉄を主材としているので、リード線１１，１
１の全体に伝わる。ところが先端部分１２，１２
は体積が大きいために特に熱がたまりやすく、周
囲の透光性樹脂１７との境界部分で熱応力あるい
はリード線膨張等による応力が生じ、他の部品に
影響を及ぼす。特に金属細線１６はたとえば直径
２〜30μｍと細いために、このような応力で剥離
や断線を生じる。また発光ダイオード１５は電極
の合金化がすすみ、順方向電圧が変動したり劣化
を早めたりすることさえある。 Conventionally, a light emitting diode lamp manufactured based on a lead frame has lead wires 11, 1 as shown in FIG.
After enlarging the tip portions 12, 12 of 1, a light emitting diode 15 was placed and fixed on the top portion, wiring was provided using thin metal wires 16, etc., and the whole was covered with a translucent resin 17. However, lead wires having such a shape have the disadvantage of hindering price reduction and having poor heat resistance characteristics. First, to explain the reason for preventing price reduction, the surface of the lead wire is plated with solder, precious metal, or a multilayer of these. , in order to make these electrical fixations good, and to make the lead wires 11, 11
However, in recent years, the high cost of this plating has been viewed as a problem, and so-called partial plating, in which plating is performed only on the necessary parts, is being considered, especially when plating with gold or silver.
However, in light-emitting diode lamps, plating has the advantage of improving light reflectance, so all parts covered with translucent resin 17 are plated, but the tips 12, 12 are large. Since it is aged, the surface area is large, so we cannot expect much of a price reduction due to partial plating. Next, to explain the heat resistance characteristics, the lead wires 11, 11
When attempting to solder to connect a drive circuit, etc. to the lead wires 11, 1, the heat generated during soldering will be
It is transmitted throughout 1. However, the tip portions 12, 12
Because of its large volume, heat tends to accumulate particularly easily, and thermal stress or stress due to lead wire expansion occurs at the boundary with the surrounding transparent resin 17, which affects other parts. In particular, since the thin metal wire 16 is thin, with a diameter of 2 to 30 μm, such stress causes peeling or disconnection. Further, the electrodes of the light emitting diode 15 may become alloyed, which may cause the forward voltage to fluctuate or even accelerate deterioration.
本案はこのような欠点を除くためになされたも
ので、以下本案を実施例に基づいて詳細に説明す
る。 The present invention has been developed to eliminate such drawbacks, and the present invention will be described in detail below based on examples.
第２図は本案実施例の発光ダイオードランプの
断面図で、１，１は銅又は鉄を芯材とするリード
線で、断面が長辺は0.6mm短辺は0.4mmの四角形を
なす先端部２，２と、断面が0.6mm四方のリード
部３，３と、先端部２，２とリード線３，３の間
にあつて横方向に突出した突出部４，４とから成
り、ランプの製造にあたつてはいわゆるリードフ
レームとして、連結棒（図示せず）の片側に複数
組整列されている。このリード線１，１はリード
部３，３および突出部４，４は表面に半田メツキ
が施こしてあり、先端部２，２の表面および突出
部４，４の上方に向く面の半田メツキ上には金又
は銀等のメツキが施こしてある。５はリード線１
の先端部２の頂部に銀ペースト等で載置固着され
た１辺0.33mmの立方体をなしなGaP等の発光ダイ
オードで、金等の金属細線６により他のリード線
１にワイヤボンド法等により配線されている。７
は着色されたエポキシ樹脂等からなる透光性樹脂
で、リード線１，１の突出部４，４および先端部
２，２と発光ダイオード５等を覆い、ランプとし
ての外形を整えて成型されたものである。 Figure 2 is a cross-sectional view of the light emitting diode lamp according to the embodiment of the present invention, where 1, 1 is a lead wire with a core material of copper or iron, and the tip part has a rectangular cross section of 0.6 mm on the long side and 0.4 mm on the short side. 2, 2, lead parts 3, 3 with a cross section of 0.6 mm square, and protruding parts 4, 4 that are located between the tip parts 2, 2 and the lead wires 3, 3 and protrude laterally. During manufacturing, a plurality of sets are arranged on one side of a connecting rod (not shown) as a so-called lead frame. These lead wires 1, 1 have lead portions 3, 3 and protruding portions 4, 4 whose surfaces are soldered, and the surfaces of the tip portions 2, 2 and the upwardly facing surfaces of the protruding portions 4, 4 are soldered. The top is plated with gold or silver. 5 is lead wire 1
A light emitting diode, such as GaP, in the shape of a cube with a side of 0.33 mm is mounted and fixed on the top of the tip part 2 with silver paste, etc., and is connected to the other lead wire 1 by wire bonding method etc. using a thin metal wire 6 such as gold. Wired. 7
is a translucent resin made of colored epoxy resin or the like, and is molded to cover the protruding parts 4, 4 and tip parts 2, 2 of the lead wires 1, 1, the light emitting diode 5, etc., and adjust the external shape of the lamp. It is something.
以上の様な構造の発光ダイオードランプの製造
にあたつては、発光ダイオード５が透光性樹脂７
の頂部中心に位置しなければならないが、突出部
４，４を透光性樹脂７の成型時における位置決め
に用いればよいから、製造が容易である。又リー
ド線１，１による光反射は先端部２，２が主とな
るので、部品固着に際して施こされるメツキは先
端部２，２のみ又は上述の如く先端部２，２と突
出部４，４の上方に向く面のみに施こせばよいか
ら、その表面積は従来に比し格段に少なく、従つ
てメツキ量は非常に少なくてすむ。また突出部
４，４は透光性樹脂７の中に埋つているので、リ
ード部３，３を引張つてもリード線１，１が抜け
ることはない。さらに最に重要な効果として発光
ダイオードランプの取付け（半田付け）に際して
リード部３，３に与えられた熱は、突出部４，４
にたまり、ここで放熱される。つまり、先端部
２，２は細くなつているので、突出部４，４は熱
緩衝部となり先端部２，２は大きな熱抵抗を有す
る部分となつて発光ダイオード５や金属細線６に
悪影響を与える程の熱は伝えない。 In manufacturing the light emitting diode lamp having the above structure, the light emitting diode 5 is made of a transparent resin 7.
However, since the protrusions 4, 4 can be used for positioning during molding of the translucent resin 7, manufacturing is easy. Also, since the light reflection by the lead wires 1, 1 is mainly from the tip portions 2, 2, plating is applied to only the tip portions 2, 2, or the tip portions 2, 2 and the protruding portion 4, as described above, when fixing the parts. Since it is only necessary to apply the coating to the upwardly facing surface of 4, the surface area is much smaller than that of the conventional method, and therefore the amount of plating can be extremely small. Further, since the protrusions 4, 4 are buried in the translucent resin 7, even if the lead parts 3, 3 are pulled, the lead wires 1, 1 will not come off. Furthermore, the most important effect is that the heat applied to the lead parts 3, 3 when attaching (soldering) the light emitting diode lamp is transferred to the protruding parts 4, 4.
This is where the heat is dissipated. In other words, since the tips 2, 2 are tapered, the protrusions 4, 4 become thermal buffers, and the tips 2, 2 become parts with large thermal resistance, which adversely affects the light emitting diode 5 and the thin metal wire 6. It doesn't convey that much heat.
このように本案は、小さい断面積を有する先端
部と、この先端部より大きい断面積を有するリー
ド部と、この先端部とリード部との間に設けられ
た突出部とを有するリード線と、このリード線の
先端部に載置固着された発光ダイオードと、この
発光ダイオードとリード線の先端部および突出部
を覆う透光性樹脂とを具備した発光ダイオードで
あるから耐熱特性に優れ製造しやすく、又部分メ
ツキを施こしても従来より廉価となる。 In this way, the present invention provides a lead wire having a tip portion having a small cross-sectional area, a lead portion having a cross-sectional area larger than the tip portion, and a protrusion provided between the tip portion and the lead portion; This light-emitting diode includes a light-emitting diode placed and fixed on the tip of the lead wire, and a light-transmitting resin that covers the light-emitting diode and the tip and protrusion of the lead wire, so it has excellent heat resistance and is easy to manufacture. Also, even if partial plating is applied, the cost will be lower than before.
第１図は従来のランプの断面図、第２図は本案
実施例の発光ダイオードランプの断面図である。
１，１……リード線、２，２……先端部、３，
３……リード部、４，４……突出部、５……発光
ダイオード、７……透光性樹脂。
FIG. 1 is a sectional view of a conventional lamp, and FIG. 2 is a sectional view of a light emitting diode lamp according to an embodiment of the present invention. 1, 1... Lead wire, 2, 2... Tip, 3,
3...Lead part, 4,4...Protrusion part, 5...Light emitting diode, 7...Transparent resin.
Claims (1)
の先端部より大きい断面積を有するリード部と、
この先端部とリード部との間に設けられた熱緩衝
部となる突出部とを有するリード線と、このリー
ド線の先端部に載置固着された発光ダイオード
と、この発光ダイオードとリード線の先端部およ
び突出部を覆いリード部を突出させた透光性樹脂
を具備した事を特徴とする発光ダイオードラン
プ。 a plated tip having a small cross-sectional area; a lead portion having a larger cross-sectional area than the tip;
A lead wire having a protrusion serving as a thermal buffer provided between the tip and the lead, a light emitting diode placed and fixed on the tip of the lead, and a connection between the light emitting diode and the lead wire. A light-emitting diode lamp characterized by comprising a translucent resin that covers a tip and a protrusion and has a lead protruding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980072907U JPS62209Y2 (en) | 1980-05-26 | 1980-05-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980072907U JPS62209Y2 (en) | 1980-05-26 | 1980-05-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56174871U JPS56174871U (en) | 1981-12-23 |
| JPS62209Y2 true JPS62209Y2 (en) | 1987-01-07 |
Family
ID=29435927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1980072907U Expired JPS62209Y2 (en) | 1980-05-26 | 1980-05-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62209Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2512626Y2 (en) * | 1990-08-21 | 1996-10-02 | サンケン電気株式会社 | Resin-sealed optical semiconductor device |
| US6921927B2 (en) * | 2003-08-28 | 2005-07-26 | Agilent Technologies, Inc. | System and method for enhanced LED thermal conductivity |
-
1980
- 1980-05-26 JP JP1980072907U patent/JPS62209Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56174871U (en) | 1981-12-23 |
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| JP2681178B2 (en) | Transistor mounting method |