JP4389263B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Manufacturing method of semiconductor light emitting device Download PDF

Info

Publication number
JP4389263B2
JP4389263B2 JP2003362041A JP2003362041A JP4389263B2 JP 4389263 B2 JP4389263 B2 JP 4389263B2 JP 2003362041 A JP2003362041 A JP 2003362041A JP 2003362041 A JP2003362041 A JP 2003362041A JP 4389263 B2 JP4389263 B2 JP 4389263B2
Authority
JP
Japan
Prior art keywords
support plate
recess
semiconductor light
cavity
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003362041A
Other languages
Japanese (ja)
Other versions
JP2005129640A (en
Inventor
功二 塚越
勉 横田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2003362041A priority Critical patent/JP4389263B2/en
Publication of JP2005129640A publication Critical patent/JP2005129640A/en
Application granted granted Critical
Publication of JP4389263B2 publication Critical patent/JP4389263B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Led Device Packages (AREA)

Description

本発明は、発光装置、特に比較的大きな電流を流して高輝度で発光できる半導体発光装置の製法に関する。   The present invention relates to a method for manufacturing a light-emitting device, particularly a semiconductor light-emitting device capable of emitting light with high luminance by flowing a relatively large current.

近年、半導体発光装置の高輝度化の要求が高まっているが、半導体発光装置の高輝度化を図るためには、半導体発光素子に大きな電流を流すため、放熱性に優れたパッケ−ジ構造を有する必要がある。   In recent years, there has been an increasing demand for higher brightness of semiconductor light-emitting devices, but in order to increase the brightness of semiconductor light-emitting devices, a large current flows through the semiconductor light-emitting elements, so a package structure with excellent heat dissipation is required. It is necessary to have.

従来の半導体発光装置として、例えば、下記特許文献1は、一方の主面にアイランド配線導体(ダイパッド)とターミナル配線導体(ボンディングパッド)とを個別に形成した絶縁性基板と、アイランド配線導体の上に固着された半導体発光素子(発光ダイオードチップ)と、半導体発光素子の上面に形成された電極とターミナル配線導体とを電気的に接続するリード細線(ワイヤ)と、絶縁性基板の一方の主面のアイランド配線導体及びターミナル配線導体の一部、半導体発光素子及びリード細線を被覆する樹脂封止体とから構成される半導体発光装置を開示する。   As a conventional semiconductor light emitting device, for example, Patent Document 1 below discloses an insulating substrate in which an island wiring conductor (die pad) and a terminal wiring conductor (bonding pad) are individually formed on one main surface, and an island wiring conductor. A semiconductor light-emitting element (light-emitting diode chip) fixed to the electrode, a lead wire (wire) for electrically connecting the electrode formed on the upper surface of the semiconductor light-emitting element and the terminal wiring conductor, and one main surface of the insulating substrate A semiconductor light emitting device is disclosed which includes a part of the island wiring conductor and the terminal wiring conductor, a semiconductor light emitting element, and a resin sealing body covering the lead thin wire.

この半導体発光装置では、熱伝導性の低い絶縁性基板のアイランド配線導体上に半導体発光素子を固着するため、半導体発光素子が発光する際に生ずる熱を外部へ効率よく放出できず、従って、半導体発光素子に大きな電流を流して高輝度で発光させることができない問題があった。この問題を解決するために、下記の特許文献2は、放熱性に優れた金属製の支持板(スラグ)上に半導体発光素子(LEDダイ)を固着し、支持板とは電気的に絶縁する状態で配線導体(金属リード)を配置し、支持板、半導体発光素子及び配線導体を樹脂製の外囲体により一体的に封止した半導体発光装置(LED:発光ダイオード)を開示する。この半導体発光装置では、半導体発光素子の発光の際に生ずる熱を支持板を通じて外部に効率的に放出して、半導体発光素子を高輝度で発光させることができる。   In this semiconductor light emitting device, since the semiconductor light emitting element is fixed on the island wiring conductor of the insulating substrate having low thermal conductivity, heat generated when the semiconductor light emitting element emits light cannot be efficiently released to the outside. There has been a problem that it is impossible to emit light with high luminance by passing a large current through the light emitting element. In order to solve this problem, the following Patent Document 2 fixes a semiconductor light emitting element (LED die) on a metal support plate (slag) excellent in heat dissipation and is electrically insulated from the support plate. A semiconductor light emitting device (LED: light emitting diode) is disclosed in which wiring conductors (metal leads) are arranged in a state, and a support plate, a semiconductor light emitting element, and a wiring conductor are integrally sealed with a resin enclosure. In this semiconductor light emitting device, heat generated during light emission of the semiconductor light emitting element can be efficiently emitted to the outside through the support plate, and the semiconductor light emitting element can emit light with high luminance.

特開平11−340517号公報(第10頁、図18)Japanese Patent Laid-Open No. 11-340517 (page 10, FIG. 18) 特開2000−150967公報(第5頁、図2)JP 2000-150967 A (page 5, FIG. 2)

しかしながら、特許文献2に開示される半導体発光装置では、配線導体(金属リード)及び樹脂製の外囲体を一体的に形成したリードフレーム組立体と、半導体発光素子を固着した金属製の支持板(スラグ)とを用意し、リードフレーム組立体及び支持板を所定の位置関係に配置して一体化する必要があるため、部品点数が多く、製造が煩雑となる欠点があった。   However, in the semiconductor light emitting device disclosed in Patent Document 2, a lead frame assembly in which a wiring conductor (metal lead) and a resin enclosure are integrally formed, and a metal support plate to which the semiconductor light emitting element is fixed. (Slag) is prepared, and the lead frame assembly and the support plate need to be arranged and integrated in a predetermined positional relationship, so that the number of parts is large and manufacturing is complicated.

そこで、本発明の目的は、比較的大きな電流を流して高輝度で発光できる半導体発光装置の製法を提供することにある。また、本発明の目的は、部品点数が少なく且つ製造が容易な半導体発光装置の製法を提供することにある。   SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device that can emit light with high luminance by flowing a relatively large current. It is another object of the present invention to provide a method for manufacturing a semiconductor light emitting device that has a small number of parts and is easy to manufacture.

本発明による半導体発光装置の製法は、凹部(5)及び凹部(5)を包囲する環状溝(5a)を設けた上面(8)を備え且つ底面(6)及び底面(6)から外側に向かって拡大する反射面(7)を凹部(5)に設けた支持板(1)を用意すると共に、キャビティ(31)及び環状突起(36)を有する成形型(30)を用意する工程と、成形型(30)のキャビティ(31)の頂面に支持板(1)の上面(8)を当接させて、支持板(1)の凹部(5)をキャビティ(31)の頂面で塞ぐと共に、成形型(30)の環状突起(36)を支持板(1)の環状溝(5a)に嵌合して、成形型(30)のキャビティ(31)内に支持板(1)を配置する工程と、キャビティ(31)内に流動化した樹脂を注入して、凹部(5)を除く支持板(1)の上面(8)と少なくとも対向する一対の側面(11,12)とを樹脂封止体(4)により被覆する工程と、支持板(1)を成形型(30)から取出す工程とを含む。光反射性の反射面(7)を備えた支持板(1)を一体にプレス成型できるので、別途反射部材を設ける必要がなく、部品数を削減することができる。また、支持板(1)の凹部(5)をキャビティ(31)の頂面で覆いながら樹脂成形するので、凹部(5)内への樹脂の流入を確実に阻止できる。更に、樹脂成形技術を利用して支持板(1)及び各リード(3,17)を一体的に被覆する樹脂封止体(4)を形成できるので、発光ダイオード装置の生産性が向上する。環状溝(5a)と環状突起(36)とを嵌合させることにより、凹部(5)内への樹脂の流入を阻止できる。 The method of manufacturing a semiconductor light emitting device according to the present invention includes a recess (5) and an upper surface (8) provided with an annular groove (5a) surrounding the recess (5), and is directed outward from the bottom surface (6) and the bottom surface (6). Preparing a support plate (1) having a reflecting surface (7) that is enlarged in the recess (5), and preparing a mold (30) having a cavity (31) and an annular protrusion (36), and molding and the support plate on the top surface of the cavity (31) of the mold (30) the upper surface (8) of (1) is brought into contact, busy tool support plate a recess (5) of (1) at the top surface of the cavity (31) At the same time, the annular protrusion (36) of the mold (30) is fitted into the annular groove (5a) of the support plate (1), and the support plate (1) is disposed in the cavity (31) of the mold (30). And a step of injecting fluidized resin into the cavity (31) to form a resin between the upper surface (8) of the support plate (1) excluding the recess (5) and at least a pair of side surfaces (11, 12) facing each other. A step of covering with the sealing body (4) and a step of removing the support plate (1) from the mold (30). Since the support plate (1) having the light-reflective reflecting surface (7) can be integrally press-molded, it is not necessary to provide a separate reflecting member, and the number of parts can be reduced. Further, since the resin molding is performed while covering the concave portion (5) of the support plate (1) with the top surface of the cavity (31), it is possible to reliably prevent the resin from flowing into the concave portion (5). Further, since the resin sealing body (4) that integrally covers the support plate (1) and the leads (3, 17) can be formed by using the resin molding technique, the productivity of the light emitting diode device is improved. By fitting the annular groove (5a) and the annular protrusion (36), the resin can be prevented from flowing into the recess (5).

バックライト用光源等に最適な高輝度の半導体発光装置を容易に製造できる。   It is possible to easily manufacture a high-luminance semiconductor light-emitting device that is optimal for a backlight light source and the like.

以下、本発明による半導体発光装置の製法を発光ダイオード(LED)装置の製法に適用した実施の形態を図1〜図8について説明する。   An embodiment in which a method for manufacturing a semiconductor light emitting device according to the present invention is applied to a method for manufacturing a light emitting diode (LED) device will be described below with reference to FIGS.

本実施の形態の発光ダイオード装置を製造する際に、まず、例えば銅、アルミニウム又はこれらの合金等の放熱性及び導電性が良好な金属板材を用意し、プレス加工等により図1に示す支持板(1)を形成すると共に、別途第1のリード(3)と第2のリード(17)とをプレス成型する。支持板(1)は、上面(8)に形成された凹部(5)と、凹部(5)を挟んで離間した支持板(1)の上面(8)及び両側面(14)に第1の溝(9)及び第1の溝(9)と並行な第2の溝(16)と、第2の溝(16)内の所定の位置に上方に突出するピン(18)とを備え、凹部(5)は、中心部に円形状の底面(6)と、底面(6)から外側に向かって逆円錐状に拡径する反射面(7)とを有する。第1の溝(9)及び第2の溝(16)の幅と深さは、スペーサ(10)を含む第1のリード(3)を嵌合できる幅と深さに設定される。   When manufacturing the light-emitting diode device of the present embodiment, first, a metal plate material having good heat dissipation and conductivity such as copper, aluminum, or an alloy thereof is prepared, and the support plate shown in FIG. (1) is formed, and the first lead (3) and the second lead (17) are separately press-molded. The support plate (1) has a concave portion (5) formed on the upper surface (8), and a first surface on the upper surface (8) and both side surfaces (14) of the support plate (1) spaced apart by sandwiching the concave portion (5). A groove (9), a second groove (16) parallel to the first groove (9), and a pin (18) protruding upward at a predetermined position in the second groove (16); (5) has a circular bottom surface (6) at the center and a reflecting surface (7) whose diameter increases from the bottom surface (6) to the outside in an inverted conical shape. The width and depth of the first groove (9) and the second groove (16) are set to a width and depth that allow the first lead (3) including the spacer (10) to be fitted.

次に、支持板(5)の上面(8)と両側面(14)とに形成された溝(9)内に電気絶縁性のスペーサ(10)を取り付けた後、支持板(1)とは電気的に絶縁された状態で溝形断面を有するスペーサ(10)の溝内に第1のリード(3)を配置して支持板(1)の第1の溝(9)内に固定する。スペーサ(10)を第1の溝(9)に取り付ける際に、接着剤を使用して貼着するか又はスペーサ(10)の幅を第1の溝(9)より若干大きく成形して、とまり嵌め又はしまり嵌めによりスペーサ(10)を第1の溝(9)内に圧入してもよい。第1のリード(3)の第1の溝(9)との対向面を被覆する樹脂製フィルムを第1のリード(3)若しくは第1の溝(9)に被着するか又は樹脂コーティングを施すことによりスペーサ(10)を形成してもよい。また、第2のリード(17)の略中央に穿設された孔(20)に第2の溝(16)のピン(18)を挿入してその頭部(21)を加締めて拡径することにより、支持板(1)の凹部(5)から右側に離間した位置に形成された第2の溝(16)内に第2のリード(17)を固定する。この場合に、ピン(18)の頭部(21)が第2の溝(16)より上方に突出しないように、第2の溝(16)の幅と深さが設定される。これにより、図2に示すように、支持板(1)に対し電気的に絶縁された第1のリード(3)と、支持板(1)に対し電気的に接続された第2のリード(17)とを凹部(5)を挟んで設けた支持板組立体(25)が形成される。   Next, after attaching an electrically insulating spacer (10) in the groove (9) formed in the upper surface (8) and both side surfaces (14) of the support plate (5), what is the support plate (1)? The first lead (3) is disposed in the groove of the spacer (10) having a groove-shaped cross section in an electrically insulated state, and is fixed in the first groove (9) of the support plate (1). When the spacer (10) is attached to the first groove (9), it is stuck using an adhesive or the spacer (10) is formed with a width slightly larger than that of the first groove (9). The spacer (10) may be press-fitted into the first groove (9) by fitting or tight fitting. A resin film covering the surface of the first lead (3) facing the first groove (9) is applied to the first lead (3) or the first groove (9), or a resin coating is applied. The spacer (10) may be formed by applying. Further, the pin (18) of the second groove (16) is inserted into the hole (20) drilled in the approximate center of the second lead (17), and the head (21) is crimped to expand the diameter. As a result, the second lead (17) is fixed in the second groove (16) formed at a position spaced to the right from the recess (5) of the support plate (1). In this case, the width and depth of the second groove (16) are set so that the head (21) of the pin (18) does not protrude upward from the second groove (16). Accordingly, as shown in FIG. 2, the first lead (3) electrically insulated from the support plate (1) and the second lead (3) electrically connected to the support plate (1) ( And a support plate assembly (25) provided with a recess (5) interposed therebetween.

次に、図3に示す上型(30a)及び下型(30b)を有する成形型としての成形金型(30)を使用して樹脂封止体(4)を成形するため、成形金型(30)のキャビティ(空所)(31)内に支持板組立体(25)を収容する。成形金型(30)を構成する上型(30a)には、キャビティ(31)内に突出し且つ支持板(1)の凹部(5)と相補的な形状を有する閉鎖突起(32)と、閉鎖突起(32)に隣接し且つ第1のリード(3)のワイヤボンディング領域(19)を形成する押圧突起(33)とが設けられる。成形金型(30)を構成する下型(30b)には、支持板(1)より若干大きな幅及び奥行きを有する拡大凹部(34)と、拡大凹部(34)の底面に形成され且つ支持板(1)の底面(15)に当接する係合凹部(35)とが設けられる。上型(30a)と下型(30b)とから成る成形型(30)の下型(30b)の係合凹部(35)に支持板(1)の底面(15)を当接させて、支持板組立体(25)を下型(30b)の拡大凹部(34)内に配置する。また、キャビティ(31)の頂面を支持板(1)の上面(8)に当接させて、支持板(1)の凹部(5)をキャビティ(31)の頂面で覆い且つ押圧突起(33)を第1のリード(8)に当接させながら、支持板(1)を成形型(30)のキャビティ(31)内に配置する。これにより、上型(30a)及び下型(30b)を閉じたとき、形成すべき樹脂封止体(4)の外形に合致するキャビティ(空所)(31)が成形金型(30)内に形成される。   Next, the molding die (4) is molded using the molding die (30) as the molding die having the upper die (30a) and the lower die (30b) shown in FIG. The support plate assembly (25) is accommodated in the cavity (vacant space) (31) of 30). The upper die (30a) constituting the molding die (30) has a closing protrusion (32) protruding into the cavity (31) and having a shape complementary to the concave portion (5) of the support plate (1), and a closing A pressing protrusion (33) that is adjacent to the protrusion (32) and forms the wire bonding region (19) of the first lead (3) is provided. The lower mold (30b) constituting the molding die (30) has an enlarged recess (34) having a slightly larger width and depth than the support plate (1), and a support plate formed on the bottom surface of the enlarged recess (34). An engaging recess (35) that contacts the bottom surface (15) of (1) is provided. The bottom surface (15) of the support plate (1) is brought into contact with the engaging recess (35) of the lower die (30b) of the molding die (30) composed of the upper die (30a) and the lower die (30b). The plate assembly (25) is disposed in the enlarged recess (34) of the lower mold (30b). Further, the top surface of the cavity (31) is brought into contact with the upper surface (8) of the support plate (1), the recess (5) of the support plate (1) is covered with the top surface of the cavity (31), and the pressing protrusion ( The support plate (1) is placed in the cavity (31) of the mold (30) while 33) is in contact with the first lead (8). As a result, when the upper mold (30a) and the lower mold (30b) are closed, a cavity (vacant space) (31) that matches the outer shape of the resin sealing body (4) to be formed is formed in the mold (30). Formed.

その後、図示しないランナ及びゲートを通じて成形金型(30)のキャビティ(31)内に流動化したエポキシ樹脂、ポリアミド樹脂又はポリイミド樹脂等の封止用樹脂を注入し、樹脂硬化後に上型(30a)及び下型(30b)を離型して支持板組立体(25)を成形金型(30)から取り出す。これにより、支持板(1)の凹部(5)の上面及び第1のリード(3)上のワイヤボンディング領域(19)を除く支持板(1)の上面(8)と、互いに対向する一対の側面(11,12)と、第1のリード(3)及び第2のリード(17)を含む両側面(14)とを被覆する樹脂封止体(4)が形成される。樹脂封止体(4)は、底面を除く支持板(1)の略全面を被覆するので、支持板(1)に対し強固に固着されると共に、支持板(1)又はリード(3,17)と外部との電気的短絡事故を防止することができる。   Then, a sealing resin such as epoxy resin, polyamide resin or polyimide resin fluidized into the cavity (31) of the molding die (30) through a runner and a gate (not shown) is injected, and the upper mold (30a) is cured after the resin is cured. Then, the lower die (30b) is released, and the support plate assembly (25) is taken out from the molding die (30). As a result, the upper surface of the recess (5) of the support plate (1) and the upper surface (8) of the support plate (1) excluding the wire bonding region (19) on the first lead (3) are paired with each other. A resin sealing body (4) that covers the side surfaces (11, 12) and both side surfaces (14) including the first lead (3) and the second lead (17) is formed. Since the resin sealing body (4) covers substantially the entire surface of the support plate (1) except the bottom surface, the resin sealant (4) is firmly fixed to the support plate (1), and the support plate (1) or the lead (3, 17 ) And an external electrical short-circuit accident can be prevented.

支持板組立体(25)の一部を樹脂封止体(4)で被覆した後、発光ダイオードチップ(2)を支持板(1)の凹部(5)の底面(6)に配置して半田等の導電性を有する接着材により固着する。これにより、発光ダイオードチップ(2)の底面側の他方の電極が半田等の導電性を有する接着材を介して支持板(1)に電気的に接続される。その後、公知のワイヤボンディング法により発光ダイオードチップ(2)の上面側の一方の電極と第1のリード(3)のワイヤボンディング領域(19)との間を金等の金属から成るリード細線(13)で接続して、リード細線(13)を介して発光ダイオードチップ(2)の上面側の一方の電極を第1のリード(3)に電気的に接続する。実際には支持板(1)の凹部(5)及び第1のリード(3)上のワイヤボンディング領域(19)を含む樹脂封止体(4)の未被覆部分にメタクリル等の光透過性及び電気的絶縁性を有する樹脂を充填することにより、図5〜図8に示す本実施の形態の発光ダイオード装置が完成する。図示しない配線基板の配線パターンに電気的に第1のリード(3)を接続し、図示しない配線基板の他の配線パターン(例えば接地パターン)に第2のリード(17)を電気的に接続することができる。図7に示すように、支持板(1)の底面(15)は樹脂封止体(4)により被覆されないので、支持板(1)の底面(15)を図示しない配線基板の他の配線パターン(例えば接地パターン)に電気的に接続することも可能である。特に図示しないが、凹部(5)の開口面(上面)にレンズを形成することもできる。   After covering a part of the support plate assembly (25) with the resin sealing body (4), the light emitting diode chip (2) is placed on the bottom surface (6) of the recess (5) of the support plate (1) and soldered. It adheres with the adhesive material which has electroconductivity. Accordingly, the other electrode on the bottom surface side of the light emitting diode chip (2) is electrically connected to the support plate (1) via the conductive adhesive such as solder. Thereafter, a fine lead wire (13) made of metal such as gold is formed between one electrode on the upper surface side of the light emitting diode chip (2) and the wire bonding region (19) of the first lead (3) by a known wire bonding method. ) To electrically connect one electrode on the upper surface side of the light emitting diode chip (2) to the first lead (3) through the thin lead wire (13). Actually, the resin sealing body (4) including the concave portion (5) of the support plate (1) and the wire bonding region (19) on the first lead (3) has light transmittance such as methacryl and the like. By filling the resin having electrical insulation, the light emitting diode device of the present embodiment shown in FIGS. 5 to 8 is completed. The first lead (3) is electrically connected to a wiring pattern of a wiring board (not shown), and the second lead (17) is electrically connected to another wiring pattern (for example, a ground pattern) of the wiring board (not shown). be able to. As shown in FIG. 7, since the bottom surface (15) of the support plate (1) is not covered with the resin sealing body (4), the bottom surface (15) of the support plate (1) is not connected to another wiring pattern (not shown) of the wiring board. It is also possible to electrically connect to (for example, a ground pattern). Although not particularly illustrated, a lens can be formed on the opening surface (upper surface) of the recess (5).

本実施の形態の発光ダイオード装置の製法では、光反射性の反射面(7)を備えた支持板(1)を一体に同時プレス成型できるので、別途反射部材を設ける必要がなく、部品数を削減することができる。また、成形型(30)のキャビティ(31)の頂面を支持板(1)の上面(8)に当接させて、支持板(1)の凹部(5)をキャビティ(31)の頂面で覆いながら、支持板(1)を成形型(30)のキャビティ(31)内に配置するので、凹部(5)内への樹脂の流入を確実に阻止することができる。リード(3)を支持板(1)の上面(8)に形成された溝(9)内に配置するので、半導体発光装置の高さを抑えて、半導体発光装置の小型化が可能となる。更に、樹脂封止体(4)が支持板(1)の上面(8)と少なくとも対向する一対の側面(11,12)を被覆するので、樹脂封止体(4)と支持板(1)との接続強度が十分に高く得られる。また、樹脂成形技術を利用して支持板(1)及び各リード(3,17)を一体的に被覆する樹脂封止体(4)を形成できるので、発光ダイオード装置の生産性が向上する。更に、支持板(1)の凹部(5)と相補的な形状を有する閉鎖突起(32)を支持板(1)の凹部(5)内に装着して、支持板組立体(20)の一部を樹脂封止体(4)で被覆するので、凹部(5)内への樹脂の流入を確実に阻止することができる。   In the method of manufacturing the light-emitting diode device according to the present embodiment, the support plate (1) having the light-reflective reflecting surface (7) can be simultaneously press-molded integrally, so there is no need to provide a separate reflecting member and the number of parts can be reduced. Can be reduced. Further, the top surface of the cavity (31) of the mold (30) is brought into contact with the upper surface (8) of the support plate (1), and the concave portion (5) of the support plate (1) is made to be the top surface of the cavity (31). Since the support plate (1) is disposed in the cavity (31) of the mold (30) while being covered with, the inflow of the resin into the recess (5) can be reliably prevented. Since the lead (3) is disposed in the groove (9) formed in the upper surface (8) of the support plate (1), the height of the semiconductor light emitting device can be suppressed and the semiconductor light emitting device can be miniaturized. Further, since the resin sealing body (4) covers at least a pair of side surfaces (11, 12) facing the upper surface (8) of the support plate (1), the resin sealing body (4) and the support plate (1) The connection strength with is sufficiently high. In addition, since the resin sealing body (4) that integrally covers the support plate (1) and the leads (3, 17) can be formed by using the resin molding technique, the productivity of the light-emitting diode device is improved. Further, a closing projection (32) having a shape complementary to the recess (5) of the support plate (1) is mounted in the recess (5) of the support plate (1), so that one part of the support plate assembly (20). Since the portion is covered with the resin sealing body (4), the inflow of the resin into the recess (5) can be reliably prevented.

金属により形成される支持板(1)は、良好な放熱性と、高い機械的強度と、優れた光反射性と、金属製のリードフレームへの良好な取付性を有する。半導体発光素子(2)からの光を低光損失で反射する所定の表面粗度を有する反射面(7)を支持板(1)のプレス成型により同時に形成することができる。半導体発光素子(2)を金属製の支持板(1)上に固着するので、支持板(1)を通じて半導体発光素子(2)から熱を良好に放出できる。このため、半導体発光素子(2)に比較的大きな電流を流して、半導体発光素子(2)を高輝度で発光させることができる。また、半導体発光素子(2)から放出される光は、反射面(7)上で所定の方向に反射されるので、半導体発光素子(2)から発生する光を一定の方向に指向させて、輝度を増加することができる。   The support plate (1) formed of metal has good heat dissipation, high mechanical strength, excellent light reflectivity, and good attachment to a metal lead frame. A reflective surface (7) having a predetermined surface roughness that reflects light from the semiconductor light emitting element (2) with low light loss can be simultaneously formed by press molding of the support plate (1). Since the semiconductor light emitting device (2) is fixed on the metal support plate (1), heat can be favorably released from the semiconductor light emitting device (2) through the support plate (1). For this reason, it is possible to cause the semiconductor light emitting element (2) to emit light with high luminance by flowing a relatively large current through the semiconductor light emitting element (2). Also, the light emitted from the semiconductor light emitting element (2) is reflected in a predetermined direction on the reflecting surface (7), so that the light generated from the semiconductor light emitting element (2) is directed in a certain direction, The brightness can be increased.

本発明の実施態様は前記の実施の形態に限定されず、種々の変更が可能である。例えば、図9に示すように、上型(30a)に閉鎖突起(32)を形成せずに、凹部(5)の入口の周囲に環状溝(5a)を支持板(1)に形成し、環状溝(5a)に嵌合する環状突起(36)を上型(30a)に形成して、環状溝(5a)と環状突起(36)とを嵌合させて、凹部(5)内への樹脂の流入を阻止してもよい。また、上記の実施の形態では、円形の底面(6)とその底面(6)から外側に向かって逆円錐状に拡径する反射面(7)とを支持板(1)の凹部(5)に設けたが、方形の底面とその底面から外側に向かって逆角錐状に拡大する三角錐若しくは四角錐等の錐体面、回転放物面、回転楕円面、回転双曲面又は球面の一部から選択される反射面を設けてもよい。底面の形状は円形又は方形に限らず、楕円形、三角形又は多角形でもよい。また、不要ならば第2の溝(16)と第2のリード(17)とを省略してもよい。また、上記の実施の形態では支持板(1)の凹部(5)付近の樹脂封止体(4)の未被覆部分を方形状としたが、凹部(5)の開口部と相似な円形状にしても良い。また、樹脂封止後の支持板組立体(25)を成形型(30)から離型する押し出しピンを上型(30a)又は下型(30b)に設けてもよい。   Embodiments of the present invention are not limited to the above-described embodiments, and various modifications can be made. For example, as shown in FIG. 9, without forming the closing protrusion (32) on the upper mold (30a), an annular groove (5a) is formed on the support plate (1) around the inlet of the recess (5), An annular projection (36) that fits into the annular groove (5a) is formed on the upper mold (30a), and the annular groove (5a) and the annular projection (36) are fitted together into the recess (5). The inflow of resin may be prevented. Further, in the above-described embodiment, the recess (5) of the support plate (1) includes the circular bottom surface (6) and the reflection surface (7) whose diameter increases from the bottom surface (6) to the outside in an inverted conical shape. From a pyramid surface such as a triangular pyramid or a quadrangular pyramid that expands in a reverse pyramid shape from the bottom surface to the outside from the bottom surface, a rotating paraboloid, a spheroidal surface, a rotating hyperboloid, or a part of a spherical surface. A selected reflective surface may be provided. The shape of the bottom surface is not limited to a circle or a rectangle, and may be an ellipse, a triangle, or a polygon. Further, if unnecessary, the second groove (16) and the second lead (17) may be omitted. Further, in the above embodiment, the uncovered portion of the resin sealing body (4) in the vicinity of the recess (5) of the support plate (1) is rectangular, but a circular shape similar to the opening of the recess (5). Anyway. Further, an extrusion pin for releasing the support plate assembly (25) after resin sealing from the mold (30) may be provided on the upper mold (30a) or the lower mold (30b).

本発明は、小型且つ薄型で高輝度の半導体発光装置を製造する際に効果が顕著である。   The present invention is particularly effective when manufacturing a small, thin and high-luminance semiconductor light emitting device.

本発明による半導体発光装置の製法に使用する支持板の斜視図The perspective view of the support plate used for the manufacturing method of the semiconductor light-emitting device by this invention 図1に示す支持板にリードを取り付けた支持組立体を示す斜視図The perspective view which shows the support assembly which attached the lead to the support plate shown in FIG. 図2の支持組立体を成形型のキャビティ内に配置した状態を示す断面図Sectional drawing which shows the state which has arrange | positioned the support assembly of FIG. 2 in the cavity of a shaping | molding die 支持板組立体を成形型のキャビティ内に収容して、樹脂封止体を形成する状態を示す断面図Sectional drawing which shows the state which accommodates a support plate assembly in the cavity of a shaping | molding die, and forms a resin sealing body 本発明による半導体発光装置の製法により製造した発光ダイオード装置の斜視図The perspective view of the light-emitting-diode apparatus manufactured by the manufacturing method of the semiconductor light-emitting device by this invention 図1の平面図Plan view of FIG. 図8のB−B線に沿う断面図Sectional drawing which follows the BB line of FIG. 図6のA−A線に沿う断面図Sectional drawing which follows the AA line of FIG. 本発明による製法の他の実施の形態を示す成形型の断面図Sectional drawing of the shaping | molding die which shows other embodiment of the manufacturing method by this invention

符号の説明Explanation of symbols

(1)・・支持板、 (2)・・発光ダイオードチップ(半導体発光素子)、 (3)・・第1のリード(リード)、 (4)・・樹脂封止体、 (5)・・凹部、 (6,15)・・底面、 (7)・・反射面、 (8)・・上面、 (9)・・第1の溝(溝)、 (10)・・スペーサ、 (11,12,14)・・側面、 (13)・・リード細線、 (16)・・第2の溝、 (17)・・第2のリード、 (18)・・ピン、 (19)・・ワイヤボンディング領域、 (25)・・支持板組立体、 (30)・・成形型、 (30a)・・上型、 (30b)・・下型、 (31)・・キャビティ、 (32)・・閉鎖突起、 (33)・・押圧突起、 (34)・・拡大凹部、 (35)・・係合凹部、   (1) ・ ・ Support plate, (2) ・ ・ Light-emitting diode chip (semiconductor light-emitting element), (3) ・ ・ First lead (4) ・ ・ Resin sealing body, (5) ・ ・Recess, (6,15) ・ ・ Bottom surface, (7) ・ ・ Reflective surface, (8) ・ ・ Top surface, (9) ・ ・ First groove, (10) ・ ・ Spacer, (11,12 , 14) ・ ・ Side, (13) ・ ・ Lead wire, (16) ・ ・ Second groove, (17) ・ ・ Second lead, (18) ・ Pin, (19) ・ Wire bonding area (25) ・ ・ Support plate assembly, (30) ・ ・ Molding die, (30a) ・ ・ Upper die, (30b) ・ ・ Lower die, (31) ・ Cavity, (32) ・ ・ Closed projection, (33) ・ ・ Pressing protrusion, (34) ・ ・ Enlarged recess, (35) ・ ・ Engaged recess,

Claims (2)

凹部及び該凹部を包囲する環状溝を設けた上面を備え且つ底面及び該底面から外側に向かって拡大する反射面を前記凹部に設けた支持板を用意すると共に、キャビティ及び環状突起を有する成形型を用意する工程と、
前記成形型のキャビティの頂面に前記支持板の上面を当接させて前記支持板の凹部を前記キャビティの頂面で塞ぐと共に、前記成形型の環状突起を前記支持板の環状溝に嵌合して、前記成形型のキャビティ内に前記支持板を配置する工程と、
前記キャビティ内に流動化した樹脂を注入して、前記凹部を除く前記支持板の上面と少なくとも対向する一対の側面とを樹脂封止体により被覆する工程と、
前記支持板を前記成形型から取出す工程とを含むことを特徴とする半導体発光装置の製法。
A mold having a recess and a support plate having an upper surface provided with an annular groove surrounding the recess and having a bottom surface and a reflecting surface that expands outward from the bottom surface, and having a cavity and an annular protrusion A process of preparing
Wherein the top surface of the support plate by abutment on the top surface of the mold cavity, the support plate top surface in busy Gutotomoni the recess of the cavity of the mold annular projection of the annular groove of the support plate Fitting and placing the support plate within the cavity of the mold ; and
Injecting the fluidized resin into the cavity, and covering the upper surface of the support plate excluding the recess with at least a pair of side surfaces facing each other with a resin sealing body,
Preparation of a semiconductor light-emitting device which comprises a step of taking out the support plate from said mold.
前記成形型のキャビティ内に前記支持板を配置する工程は、前記成形型のキャビティ内に突出し且つ前記支持板の凹部と相補的な形状を有する突起を前記支持板の凹部内に装着する工程を含む請求項1に記載の半導体発光装置の製法。 The step of disposing the support plate in the cavity of the mold includes the step of mounting a protrusion protruding into the cavity of the mold and having a shape complementary to the recess of the support plate in the recess of the support plate. The manufacturing method of the semiconductor light-emitting device of Claim 1 containing.
JP2003362041A 2003-10-22 2003-10-22 Manufacturing method of semiconductor light emitting device Expired - Fee Related JP4389263B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003362041A JP4389263B2 (en) 2003-10-22 2003-10-22 Manufacturing method of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003362041A JP4389263B2 (en) 2003-10-22 2003-10-22 Manufacturing method of semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JP2005129640A JP2005129640A (en) 2005-05-19
JP4389263B2 true JP4389263B2 (en) 2009-12-24

Family

ID=34641814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003362041A Expired - Fee Related JP4389263B2 (en) 2003-10-22 2003-10-22 Manufacturing method of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP4389263B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005036266A1 (en) * 2005-07-11 2007-01-25 Osram Opto Semiconductors Gmbh Housing for a laser diode device, laser diode device and method of manufacturing a laser diode device
KR100631992B1 (en) * 2005-07-19 2006-10-09 삼성전기주식회사 Light emitting diode package having dual lens structure for laterally emitting light
TWI537626B (en) * 2011-03-28 2016-06-11 柯尼卡美能達精密光學股份有限公司 Manufacturing method of image pickup lens unit and image pickup lens unit
JP2013084827A (en) * 2011-10-12 2013-05-09 Accelerate Device Co Ltd Led package

Also Published As

Publication number Publication date
JP2005129640A (en) 2005-05-19

Similar Documents

Publication Publication Date Title
USRE46851E1 (en) High power light emitting diode package
JP3912607B2 (en) Manufacturing method of semiconductor light emitting device
US6060729A (en) Light-emitting device
JP3910144B2 (en) Semiconductor light emitting device and manufacturing method thereof
US6936855B1 (en) Bendable high flux LED array
JP4432275B2 (en) Light source device
US7557384B2 (en) Semiconductor light emitting device and semiconductor light emitting unit
JP5038623B2 (en) Optical semiconductor device and manufacturing method thereof
US8097937B2 (en) Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component
US7592631B2 (en) LED package frame and LED package having the same
JP4174823B2 (en) Semiconductor light emitting device
US8169128B2 (en) LED package having recess in heat conducting part
KR101101476B1 (en) Light emitting apparatus and semiconductor apparatus, and method for manufacturing the same
EP2479810B1 (en) Light-emitting device package and method of manufacturing the same
JP2005294736A (en) Manufacturing method for semiconductor light emitting device
JP2007049152A (en) Led package and its manufacturing method
WO2008047933A1 (en) Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same
JP2008147203A (en) Semiconductor light-emitting device
KR102168935B1 (en) Bonding led die to lead frame strips
JP2003303936A (en) Lead frame and manufacturing method thereof, and chip type led employing the lead frame
JP4242194B2 (en) Semiconductor light emitting device and manufacturing method thereof
JP2008103401A (en) Package for upper/lower electrode type light emitting diode, and its manufacturing method
JP2008130735A (en) Manufacturing method of light-emitting device
KR100610275B1 (en) Power LED package and method for producing the same
JP4572892B2 (en) Semiconductor light emitting device, method of manufacturing the same, and reflector for semiconductor light emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060613

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090427

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090623

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090914

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090927

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121016

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131016

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees