JPH0142511B2 - - Google Patents
Info
- Publication number
- JPH0142511B2 JPH0142511B2 JP56166754A JP16675481A JPH0142511B2 JP H0142511 B2 JPH0142511 B2 JP H0142511B2 JP 56166754 A JP56166754 A JP 56166754A JP 16675481 A JP16675481 A JP 16675481A JP H0142511 B2 JPH0142511 B2 JP H0142511B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- resin
- strips
- pair
- lead wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 39
- 239000011347 resin Substances 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 21
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】
この発明は半導体装置、特に半導体発光装置を
製造する際に用いられるリードフレームの新規な
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel method for manufacturing a lead frame used in manufacturing semiconductor devices, particularly semiconductor light emitting devices.
従来、半導体発光装置の一つであるLEDラン
プは、リード固定部がセラミツク製のリードフレ
ームを用いて製造されている。ところがこのセラ
ミツク製のリード固定部は単品としてしか取り扱
えず、このためLEDランプの製造工程が複雑に
なつて製造コストが高価となる欠点がある。 Conventionally, an LED lamp, which is one type of semiconductor light emitting device, has been manufactured using a lead frame whose lead fixing portion is made of ceramic. However, this ceramic lead fixing part can only be handled as a single item, which has the drawback of complicating the manufacturing process of the LED lamp and increasing manufacturing costs.
そこで最近では、樹脂成型によつて多数のリー
ド固定部を一度にしかも連続した状態で形成する
ことによつて、LEDランプの自動製造に適した
構成のリードフレームが開発されている。このリ
ードフレームは第１図の平面図に示すように、鉄
製あるいは銅製で厚みが0.4〜0.5mmの細長い平坦
な金属細条を打抜き加工またはエツチング加工し
たものである。１ａ，１ｂは互いに平行に延長さ
れた一対のリード線支持細条であり、この細条１
ａ，１ｂの所定位置には自動製造時に用いられる
ピツチ送り用孔２が開孔されている。上記細条１
ａ，１ｂ相互間にはこの細条１ａ，１ｂと直交す
る方向に２本を１組とするリード線３ａ，３ｂが
複数組形成されていて、このリード線３ａ，３ｂ
がアノードリード線およびカソードリード線とな
るものである。また上記各組のリード線３ａ，３
ｂと直交する方向には、これらリード線３ａ，３
ｂの変形を防止するための一対の橋絡細条４ａ，
４ｂが所定間隔を保つて平行に形成されている。
そしてこのように加工されたリードフレームの、
一対の橋絡細条４ａ，４ｂ相互間の各組のリード
線３ａ，３ｂの図中斜線を付して示す２個所を樹
脂によつて結合成型してリード固定部となる２個
の単位樹脂部５ａ，５ｂを形成する。この樹脂成
型後は、各単位樹脂部５ａ，５ａ，…および各単
位樹脂部５ｂ，５ｂ，…はそれぞれ一列に配列さ
れた状態となる。次に一列に配列形成された単位
樹脂５ａ，５ｂ間の図中破線を付して示す位置で
各組のリード線３ａ，３ｂを切断することによつ
て、前記リード線支持細条１ａまたは１ｂによつ
て支持された二つのリードフレームを得る。この
後は、このようにして得られたリードフレームを
自動製造工程にかけて、各単位樹脂部５ａまたは
５ｂの端面から突出している一方のリード線たと
えば３ａ上に発光素子をマウントし、次にこの素
子と他方のリード線３ｂとをボンデイングワイヤ
で結線し、さらに次に発光素子およびボンデイン
グワイヤの保護ならびに効率良く光を出させるた
めに光透過性のエポキシ樹脂を用いて単位樹脂部
５ａまたは５ｂ上にたとえば半球状のレンズ部を
形成した後に一つずつ分離する。 Therefore, recently, lead frames have been developed that are suitable for automatic manufacturing of LED lamps by forming a large number of lead fixing parts at once and in a continuous state by resin molding. As shown in the plan view of FIG. 1, this lead frame is made of iron or copper and is formed by punching or etching an elongated flat metal strip with a thickness of 0.4 to 0.5 mm. 1a and 1b are a pair of lead wire support strips extending parallel to each other;
Pitch feed holes 2 used during automatic manufacturing are opened at predetermined positions of a and 1b. Above article 1
A plurality of sets of lead wires 3a, 3b are formed between each lead wire 3a, 3b in a direction orthogonal to the strips 1a, 1b.
become the anode lead wire and cathode lead wire. In addition, each set of lead wires 3a, 3
In the direction perpendicular to b, these lead wires 3a, 3
a pair of bridging strips 4a to prevent deformation of b;
4b are formed in parallel with a predetermined interval.
And of the lead frame processed in this way,
Two unit resin units are formed by joining and molding the two parts shown with diagonal lines in the figure of each pair of lead wires 3a, 3b between the pair of bridging strips 4a, 4b with resin to form lead fixing parts. Sections 5a and 5b are formed. After this resin molding, each unit resin part 5a, 5a, . . . and each unit resin part 5b, 5b, . . . are arranged in a line. Next, each set of lead wires 3a, 3b is cut at a position indicated by a broken line in the figure between the unit resins 5a, 5b arranged in a row, so that the lead wire support strips 1a or 1b are cut. Obtain two lead frames supported by. Thereafter, the lead frame thus obtained is subjected to an automatic manufacturing process to mount a light emitting element on one lead wire, for example 3a, protruding from the end face of each unit resin part 5a or 5b, and then this element and the other lead wire 3b are connected with a bonding wire, and then, in order to protect the light emitting element and the bonding wire and to emit light efficiently, a light-transmitting epoxy resin is used to coat the unit resin part 5a or 5b. For example, after forming hemispherical lens parts, they are separated one by one.
上記のような方法によつてリードフレームを製
造すれば、自動製造工程を適用してLEDランプ
を連続的に製造することができるために製造コス
トの大幅な低下が実現できる。ところが前記単位
樹脂部５ａ，５ｂ間で各組のリード線３ａ，３ｂ
を切断して二つのリードフレームを得る際、リー
ド線３ａ，３ｂは第２図の断面図に示すように単
位樹脂部５の端面から突出した構造となる。この
ため第２図に示すように一方のリード線３ａの端
面上に発光素子６をマウントすると、点灯時にこ
のリード線３ａの突出部分がどうしても暗部とな
り、均一な効率の良い発光状態が得にくいという
不都合が生じる。 If the lead frame is manufactured by the method described above, LED lamps can be manufactured continuously by applying an automatic manufacturing process, and therefore manufacturing costs can be significantly reduced. However, each set of lead wires 3a, 3b between the unit resin parts 5a, 5b
When the two lead frames are obtained by cutting, the lead wires 3a and 3b have a structure in which they protrude from the end surface of the unit resin part 5, as shown in the cross-sectional view of FIG. For this reason, if the light emitting element 6 is mounted on the end face of one of the lead wires 3a as shown in FIG. 2, the protruding portion of the lead wire 3a will inevitably become a dark area during lighting, making it difficult to obtain a uniform and efficient light emitting state. This will cause inconvenience.
この発明は上記のような事情を考慮してなされ
たものであり、その目的とすところは、自動製造
工程が適用可能でありしたがつて半導体装置を安
価に製造することができると共に、点灯時に暗部
が生ぜず均一な効率の良い発光状態を得ることが
できる半導体装置を製造できる半導体装置用リー
ドフレームの製造方法を提供することにある。 This invention was made in consideration of the above-mentioned circumstances, and its purpose is to be able to apply an automatic manufacturing process, thereby making it possible to manufacture semiconductor devices at low cost, and to provide a It is an object of the present invention to provide a method for manufacturing a lead frame for a semiconductor device, which can manufacture a semiconductor device that can obtain a uniform and efficient light emitting state without producing dark areas.
以下図面を参照してこの発明の一実施例を説明
する。このリードフレームは前記第１図の場合と
同様、まず第３図に示すように鉄製あるいは銅製
で厚みが0.4〜0.5mmの細長い平坦な金属細条を打
抜き加工またはエツチング加工して、ピツチ送り
用孔２が開孔された一対のリード線支持細条１
ａ，１ｂ、複数組のリード線３ａ，３ｂおよび一
対の橋絡細条４ａ，４ｂそれぞれを形成する。次
に樹脂を導びくゲート部分が上記一対の橋絡細条
４ａ，４ｂ相互間のほぼ中央部となるように設定
したトランスフアモールド用金型に上記リードフ
レームをセツトし、熱硬化性の白色樹脂たとえば
不飽和ポリエステル樹脂を用いて、第４図に示す
ように一対の橋絡細条４ａ，４ｂ相互間の各組の
リード線３ａ，３ｂを結合成型してリード固定部
となる単位樹脂部７を形成する。なおこの単位樹
脂部７の形状はその目的に応じて種々に設定され
るが、ここではたとえば第５図に示すように直径
が３mm程度の円筒状に設定される。また第４図お
よび第５図中、各単位樹脂部７を連結している連
結樹脂部８は前記ゲート部に残つた樹脂が固化し
たものであり、各単位樹脂部７はこの連結樹脂部
８を介して一体的に連結した状態となつている。
次に樹脂成型が終了したならば、上記各単位樹脂
部７をそのほぼ中央部から上記リード線支持細条
１ａ，１ｂと平行する方向にブレードなどで切断
してリードフレームを二つに分割する。この切断
の際、ブレードはほぼ前記連結樹脂部８上に位置
するため、リードフレームの切断と同時に連結樹
脂部８が除去され第６図の斜視図に示すようなリ
ードフレームが二つ得られる。 An embodiment of the present invention will be described below with reference to the drawings. As in the case of Fig. 1, this lead frame is first made by punching or etching a long, flat metal strip made of iron or copper with a thickness of 0.4 to 0.5 mm, as shown in Fig. 3, and then used for pitch feeding. A pair of lead wire support strips 1 with holes 2 formed therein.
a, 1b, a plurality of sets of lead wires 3a, 3b, and a pair of bridging strips 4a, 4b, respectively. Next, the lead frame was set in a transfer molding die set so that the gate portion for guiding the resin was located approximately in the center between the pair of bridging strips 4a and 4b, and a thermosetting white Using resin, for example, unsaturated polyester resin, each set of lead wires 3a and 3b between a pair of bridging strips 4a and 4b are molded together as shown in FIG. 4 to form a unit resin part that becomes a lead fixing part. form 7. The shape of this unit resin part 7 can be set in various ways depending on its purpose, but here, for example, as shown in FIG. 5, it is set to have a cylindrical shape with a diameter of about 3 mm. In addition, in FIGS. 4 and 5, the connecting resin part 8 connecting each unit resin part 7 is solidified resin remaining in the gate part, and each unit resin part 7 is connected to this connecting resin part 8. They are integrally connected via.
Next, when the resin molding is completed, the lead frame is divided into two by cutting each of the unit resin parts 7 from approximately the center thereof with a blade or the like in a direction parallel to the lead wire support strips 1a and 1b. . At the time of this cutting, since the blade is located almost on the connecting resin part 8, the connecting resin part 8 is removed at the same time as the lead frame is cut, and two lead frames as shown in the perspective view of FIG. 6 are obtained.
このようにして得られたリードフレームを用い
れば、第１図のものと同様に自動製造工程を適用
してLEDランプを製造的に製造することができ
るために製造コストの大幅な低下が実現できる。
しかも第６図に示すように、リード線３ａ，３ｂ
の端面は単位樹脂部７の端面とほぼ同一面となる
ために、この後、第７図に示すように発光素子６
をマウントし、またボンデイングワイヤ９によつ
て結線しさらにレンズ部１０を形成して完成され
たLEDランプを点灯する場合、前記突出部分が
存在しないので暗部は生ぜず、したがつて均一な
効率の良い発光状態が容易に得られる。なお、発
光素子のマウント部およびボンデイング部には予
め必要に応じてAuやAgによるメツキが施こされ
ると共にリード線３ａ，３ｂにはSnによるメツ
キや半田被覆が行なわれる。 By using the lead frame obtained in this way, it is possible to manufacture LED lamps using an automated manufacturing process similar to the one shown in Figure 1, which can significantly reduce manufacturing costs. .
Moreover, as shown in FIG. 6, the lead wires 3a, 3b
Since the end face of the unit resin portion 7 is almost the same as the end face of the unit resin portion 7, the light emitting element 6 is then placed as shown in FIG.
When lighting a completed LED lamp by mounting the LED lamp, connecting it with the bonding wire 9, and forming the lens part 10, there is no dark part because the protruding part does not exist, and therefore uniform efficiency is achieved. Good light emitting conditions can be easily obtained. Note that the mounting portion and bonding portion of the light emitting element are plated with Au or Ag in advance as required, and the lead wires 3a and 3b are plated with Sn or coated with solder.
またこの発明は上記実施例に限定されるもので
はなく、たとえば単位樹脂部７は熱硬化性樹脂に
よつて形成する場合について説明したが、これは
熱軟化性樹脂を用いるようにしてもよい。 Further, the present invention is not limited to the above-mentioned embodiments. For example, although the case where the unit resin portion 7 is formed of a thermosetting resin has been described, a thermosetting resin may be used instead.
以上説明したようにこの発明によれば、各組の
リード線を樹脂によつて結合成型して単位樹脂部
を形成し、これら各単位樹脂部をそのほぼ中央部
からリード線支持細条と平行する方向に切断分離
するようにしたので、自動製造工程が適用できし
たがつて半導体装置を安価に製造することがで
き、またリード線端面と単位樹脂部の端面とがほ
ぼ同一面となつて点灯時に暗部が生ぜず、均一な
効率の良い発光状態を得ることができる半導体装
置を製造することができる。 As explained above, according to the present invention, each set of lead wires is bonded and molded with resin to form a unit resin part, and each of these unit resin parts is extended from approximately the center thereof parallel to the lead wire support strip. Since the device is cut and separated in the direction in which it is cut and separated, an automatic manufacturing process can be applied, which makes it possible to manufacture semiconductor devices at low cost.Also, the end face of the lead wire and the end face of the unit resin part are almost on the same surface, making it possible to light up the device. Accordingly, it is possible to manufacture a semiconductor device in which a uniform and efficient light emitting state can be obtained without the occurrence of dark areas.
第１図および第２図はそれぞれこの発明の途中
経過の段階で開発された製造方法を説明するため
の平面図および断面図、第３図ないし第７図はそ
れぞれこの発明の一実施例方法を説明するための
平面図および斜視図である。
１ａ，１ｂ……リード線支持細条、２……ピツ
チ送り用孔、３ａ，３ｂ……リード線、４ａ，４
ｂ……橋絡細条、６……発光素子、７……単位樹
脂部、８……連結樹脂部、９……ボンデイングワ
イヤ、１０……レンズ部。
1 and 2 are a plan view and a sectional view, respectively, for explaining a manufacturing method developed at an intermediate stage of the invention, and FIGS. 3 to 7 each illustrate an embodiment of the method of the invention. FIG. 2 is a plan view and a perspective view for explanation. 1a, 1b...Lead wire support strip, 2...Pitch feed hole, 3a, 3b...Lead wire, 4a, 4
b...Bridging strip, 6...Light emitting element, 7...Unit resin part, 8...Connecting resin part, 9...Bonding wire, 10...Lens part.
Claims (1)
された一対のリード線支持細条およびこの細条の
相互間にこれの延長方向と直交する方向に複数本
を一組として複数組のリード線を設けかつこれら
のリード線と直交する方向に所定間隔を保つて一
対の橋絡細条を設ける工程と、樹脂を導びくゲー
ト部分を上記一対の橋絡細条相互間のほぼ中央部
に設定し、上記各組のリード線を樹脂によつて結
合成型して単位樹脂部を形成する工程と、上記各
単位樹脂部をそのほぼ中央部から上記リード線支
持細条と平行する方向に切断分割する工程とを具
備したことを特徴とする半導体装置用リードフレ
ームの製造方法。1 A pair of lead wire support strips extending in parallel from a single long and flat metal strip, and a plurality of sets of lead wires extending between the strips in a direction perpendicular to the direction in which they extend. and providing a pair of bridging strips at a predetermined interval in a direction perpendicular to these lead wires, and setting a gate portion for guiding the resin approximately in the center between the pair of bridging strips. and a step of forming unit resin parts by bonding and molding each set of lead wires with resin, and cutting and dividing each of the unit resin parts from approximately the center thereof in a direction parallel to the lead wire support strips. A method for manufacturing a lead frame for a semiconductor device, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166754A JPS5867077A (en) | 1981-10-19 | 1981-10-19 | Manufacture of lead frame for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166754A JPS5867077A (en) | 1981-10-19 | 1981-10-19 | Manufacture of lead frame for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5867077A JPS5867077A (en) | 1983-04-21 |
| JPH0142511B2 true JPH0142511B2 (en) | 1989-09-13 |
Family
ID=15837110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56166754A Granted JPS5867077A (en) | 1981-10-19 | 1981-10-19 | Manufacture of lead frame for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5867077A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0744283B2 (en) * | 1988-03-23 | 1995-05-15 | 株式会社精工舎 | Manufacturing method of light receiving device |
| US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
| US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
| US10490712B2 (en) | 2011-07-21 | 2019-11-26 | Cree, Inc. | Light emitter device packages, components, and methods for improved chemical resistance and related methods |
| US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
| US9496466B2 (en) * | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
| US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
| US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
-
1981
- 1981-10-19 JP JP56166754A patent/JPS5867077A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5867077A (en) | 1983-04-21 |
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