JP2948382B2 - Package type semiconductor laser device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor laser device in which a semiconductor laser chip is used as a light emitting element of a laser beam and a portion of the semiconductor laser chip is packaged with a cap.

[0002]

2. Description of the Related Art Conventionally, this type of package type semiconductor laser device is described in, for example, Japanese Patent Application Laid-Open No. 62-219672 or Japanese Utility Model Application Laid-Open No. 62-58066.
As shown in FIGS. 14 to 16, a heat sink body 2 is integrally formed on the upper surface of a disk-shaped stem 1 having a diameter D and a thickness T made of metal such as carbon steel. Then, the semiconductor laser chip 3 is mounted on the side surface of the heat sink body 2 via the submount 4, and the cap body 5 having a transparent window 6 such as glass on the upper surface of the stem 1 is attached to the heat sink body 2. 2, the semiconductor laser chip 3 and the submount 4 are packaged.

Here, reference numeral 9 denotes a monitoring photodiode provided in a concave portion 9a on the upper surface of the stem 1, reference numeral 7a denotes a first lead terminal fixed to the lower surface of the stem 1, and reference numerals 7b and 7c denote the same. The second and third lead terminals inserted through through holes 1a and 1b formed in the stem 1 are shown, respectively, and the second and third lead terminals 7b and 7c are shown.
Are fixed in an insulated state in the through holes 1a and 1b via an insulating sealing material 8. Further, between the semiconductor laser chip 3 and the submount 4, the second lead terminal 7b and the submount 4 And between the third lead terminal 7c and the monitoring photodiode 9 are connected by thin metal wires A, B, and C in the cap body 5.

[0004]

However, in this conventional package type semiconductor laser device, a laser beam emitted from the semiconductor laser chip 3 is applied to a block 2 projecting from a stem 1. It is mounted so that the axis of E is directed upward from the upper surface of the stem 1.

Therefore, in the package type semiconductor laser device, the height H of the laser beam E along the axis is at least a value obtained by adding the height of the heat sink 2 to the thickness T of the stem 1. In addition, the thickness T of the stem 1 cannot be reduced because the heat sink 2 is integrally formed with the stem 1, and the height H is considerably increased. However, there is a problem that it cannot be made thin.

Moreover, in the conventional package type semiconductor laser device, the heat sink 2 for mounting the semiconductor laser chip 3 is integrally formed on the upper surface of the stem 1, and the heat sink 2 is mounted on the stem 1. And a large number of processing steps are required to integrally form the second and third lead terminals 7b and 7c with the stem 1 in an insulating state with the insulating seal 8.
There was also a problem that the manufacturing cost increased significantly.

An object of the present invention is to provide a package type semiconductor laser device which solves these problems.

[0008]

In order to achieve this technical object, the present invention provides a support plate made of a metal plate and a support plate made of the metal plate.
The laser beam is emitted in a direction substantially parallel to the upper surface.
A semiconductor laser chip mounted on a support plate;
Open the top of the board so that it surrounds the semiconductor laser chip.
A synthetic resin frame formed in a release form, and an upper surface of the frame
And a transparent plate for closing, wherein the frame or the frame is provided inside the frame.
Is provided with a mounting portion formed integrally with the support plate,
A laser emitted from the semiconductor laser chip to the attachment portion
Reflector for changing the direction of light toward the transparent plate
Attach. ].

[0009]

As described above, on the upper surface of the support plate,
While mounting the semiconductor laser chip horizontally, a frame made of a synthetic resin whose upper surface is covered with a transparent plate is formed around the support plate, and the laser beam from the semiconductor laser chip is transparently formed in the frame. By providing a reflecting portion that changes the direction toward the plate, the laser beam is emitted upward from the upper surface of the support plate, which is necessary in the conventional packaged semiconductor laser device. Since the heat sink can be omitted, the height dimension along the axis of the laser beam can be reduced, and the number of steps required for processing the support plate can be greatly reduced.

Further, by embedding each lead terminal for the semiconductor laser chip in the synthetic resin frame, it is possible to fix each lead terminal in an insulating state.
Because it can be simultaneously formed by molding the synthetic resin frame,
The trouble of fixing each lead terminal in an insulated state can be greatly reduced. Therefore, according to the present invention, the package type semiconductor laser device can be made thinner and the manufacturing cost can be greatly reduced.

[0011]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show a first embodiment. In this figure, reference numeral 10 denotes a package type semiconductor laser device according to the present invention.
Reference numeral 0 denotes a support plate 11 made of a metal plate, a frame 12 made of a synthetic resin integrally molded around the support plate 11, and a frame 12 made of a synthetic resin.
And a transparent plate 13 such as a glass plate fixed with an adhesive or the like so as to cover a release portion on the upper surface .

On the upper surface of the support plate 11 in the frame 12, a submount 14 provided with a monitoring photodiode 15 on a part of the upper surface is fixed. On the upper surface of the submount 14, a semiconductor laser chip 16 is mounted. Then, the laser beam from the front cleavage surface 16a of the semiconductor laser chip 16 is fixed laterally so as to be emitted in a direction substantially parallel to the upper surface of the support plate 11.

On the other hand, on the left and right sides of a first lead terminal 17 extending integrally from the support plate 11, a second lead terminal 1 is provided.
8 and third lead terminals 19 are arranged in parallel with each other, and these second and third lead terminals 18 and 19 are connected to the support plate 1.
When the frame 12 is formed around the periphery of the
It is configured to be buried inside. A mounting portion 20 for a reflection portion is formed integrally with the frame 12 at a portion of the frame 12 facing the semiconductor laser chip 15. A reflecting portion 21 that fixes a laser beam E emitted from a front cleavage surface 16a of the laser chip 16 toward the transparent plate 13 is fixed.

In the first embodiment, the rear cleavage surface 16b of the semiconductor laser chip 16 on the upper surface of the submount 14 and the monitor photodiode 1
5, a monitoring laser beam emitted from the rear cleavage plane 16b is supplied to the monitoring photodiode 15 from the rear cleavage plane 16b.
A waveguide 22 made of a transparent or translucent synthetic resin is applied to lead to the surface.

With this configuration, while the semiconductor laser chip 16 in the frame 12 is mounted laterally with respect to the upper surface of the support plate 11, the semiconductor laser chip 16 extends from the front cleavage surface 16a of the horizontally oriented semiconductor laser chip 16. Of the laser beam E of
The light can be emitted upward from the upper surface of the support plate 11 through the transparent body 13 fixed to the upper surface of the frame body 12.

Therefore, it is not necessary to mount the semiconductor laser chip 16 vertically on the upper surface of the support plate 11, so that in a conventional package type semiconductor laser device, the semiconductor laser chip is mounted vertically. It is possible to abolish the heat sink that was necessary for the purpose. The second and third lead terminals 18 and 19 for the semiconductor laser chip 16 are connected to the frame 12.
Can be fixed to the frame 12 in an insulated state at the same time as the molding.

Incidentally, in manufacturing the package type semiconductor laser device 10 having this configuration, the following method can be adopted. That is, first, FIG.
As shown in (1), a lead formed by integrally forming a first lead terminal 17 extending integrally from the support plate 11 and second and third lead terminals 18 and 19 on both sides thereof at appropriate intervals along the longitudinal direction. A frame 23 is prepared, and while the lead frame 23 is being transported along its longitudinal direction, as shown in FIG. Are bent so as to be lower than the second and third lead terminals 18 and 19 by an appropriate dimension, and then, the tip ends of the lead terminals 17, 18, and 19 are sandwiched between a pair of dies (not shown). 6 to 8 by press-injecting the synthetic resin in a molten state into the molding cavity formed on the mating surface of both molds.
As shown in FIG. 2, a frame 12 made of synthetic resin is integrally formed around the support plate 11 so that the second and third lead terminals 18 and 19 are embedded in the frame 12. .

A submount 14 and a semiconductor laser chip 16 are mounted in the frame 12, and a metal wire (not shown) is used to connect the submount 14 and the semiconductor laser chip 16 to each other and to each other between the lead terminals 18 and 19. After the wire bonding, the transparent plate 13 is fixed on the upper surface of the frame body 12, and finally,
By cutting off from the lead frame 23, the package type semiconductor laser device 10 as shown in FIGS. 1 to 3 can be manufactured.

FIGS. 9 to 11 show a second embodiment. The second embodiment is a semiconductor laser chip mounted laterally on a top surface of a support plate 11 via a submount 14. FIG. By completely blocking the rear cleavage plane at 16 with the reflective film 24, all of the laser beam
a, a reflector mounting portion 20a bent in an inclined manner is integrally formed at the tip of the support plate 11, and a monitor photodiode is attached to the reflector mounting portion 20a. On the surface of the photodiode 25, most (about 80%) of the laser beam emitted from the front cleavage surface 16a of the semiconductor laser chip 16 is changed in direction toward the transparent plate 13 and the remaining laser beam is changed. This is provided with a reflection film 21a that allows light to pass through the photodiode 25.

According to the package type semiconductor laser device 10a of the second embodiment, the laser beam E emitted from the front cleavage surface 16a of the semiconductor laser chip 16 can be directly monitored by the photodiode 25. Therefore, there is an advantage that the output of the monitor can be increased and the control accuracy of the monitor of the laser beam can be improved.

When manufacturing the package type semiconductor laser device 10a in the second embodiment, as shown in FIG.
A lead frame 23a is prepared by integrally molding the first lead terminal 17 extending integrally from 1 and the second and third lead terminals 18 and 19 on both sides thereof at appropriate intervals along the longitudinal direction. While the lead frame 23a is being transported along its longitudinal direction, as shown in FIG. 13, a middle portion of the first lead terminal 17 provided with the support plate 11 is moved by the support plate 11 to the second and third leads. Terminals 18, 19
In addition to bending so as to lower the size by a more appropriate size, the mounting portion 20a for the reflecting portion is bent in an inclined shape.
As in the case of the first embodiment, the molding of the frame body 12, the mounting of the submount 14 and the semiconductor laser chip 16, the wire bonding with a metal wire, and the fixing of the transparent plate 13 are performed, and then the lead frame 23a is cut off. It is.

[Brief description of the drawings]

FIG. 1 is a vertical sectional front view of a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a plan sectional view taken along line II-II of FIG.

FIG. 3 is a sectional view taken along line III-III of FIG.

FIG. 4 is a perspective view of a lead frame used for manufacturing the semiconductor laser device according to the first embodiment.

FIG. 5 is a perspective view showing a state in which a first lead terminal of the lead frame is bent.

FIG. 6 is a perspective view showing a state where a synthetic resin frame is formed on each support plate of the lead frame.

FIG. 7 is a sectional view taken along the line VII-VII in FIG. 6;

8 is a sectional view taken along line VIII-VIII of FIG.

FIG. 9 is a vertical sectional front view of a semiconductor laser device according to a second embodiment of the present invention.

10 is a plan sectional view taken along line XX of FIG. 9;

11 is a sectional view taken along line XI-XI of FIG. 9;

FIG. 12 is a perspective view of a lead frame used for manufacturing a semiconductor laser device according to a second embodiment.

FIG. 13 is a perspective view showing a state where a first lead terminal of the lead frame is bent.

FIG. 14 is a vertical sectional front view of a conventional semiconductor laser device.

15 is a sectional view taken along the line XV-XV in FIG.

16 is a sectional view taken along the line XVI-XVI in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10, 10a Semiconductor laser device 11 Heat sink 12 Frame 13 Transparent plate 14 Submount 16 Semiconductor laser chip 17 First lead terminal 18, 19 Second and third lead terminal 20, 20a Reflector mounting portion 21, 21a Reflector 25 Photodiode for monitor

Claims (2)

(57) [Claims] 1. A support plate made of a metal plate, and an upper surface of the support plate
The support plate emits a laser beam in a substantially parallel direction.
And a semiconductor laser chip mounted on the support plate.
Open-top type to surround the semiconductor laser chip
The formed synthetic resin frame and a transparent film for closing the upper surface of the frame.
And a light plate, inside the frame body, integral with the frame body.
A package-type semiconductor laser device comprising: a mounting portion formed in the semiconductor laser chip; and a reflection portion for changing a direction of a laser beam emitted from the semiconductor laser chip toward the transparent plate. . 2. A support plate made of a metal plate, and an upper surface of the support plate.
The support plate emits a laser beam in a substantially parallel direction.
And a semiconductor laser chip mounted on the support plate.
Open-top type to surround the semiconductor laser chip
The formed synthetic resin frame and a transparent film for closing the upper surface of the frame.
And a support plate inside the frame body.
A package-type semiconductor laser , comprising: a mounting portion formed in a uniform manner; and a mounting portion for mounting a reflecting portion for changing a direction of a laser beam emitted from the semiconductor laser chip toward the transparent plate. apparatus.