JP2951077B2 - Mold type semiconductor laser device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device using a semiconductor laser chip as a light emitting element of a laser beam. The present invention relates to a semiconductor laser device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, this type of molded semiconductor laser device has been described in, for example, Japanese Patent Application Laid-Open No. 64-28882, and has a first lead terminal B as shown in FIGS. A portion of the semiconductor laser chip C mounted on the supporting plate A provided is sealed with a mold part D made of a synthetic resin having translucency, and the front cleavage of the semiconductor laser chip C in the mold part D is performed. The laser beam E is emitted in a coherent state by attaching a transparent plate F such as a glass plate to a portion where the laser beam E is emitted from the surface. The symbols G and H are
2 shows the second and third lead terminals.

[0003]

Incidentally, in this type of molded semiconductor laser device, a molded portion D made of a synthetic resin for encapsulating the semiconductor laser chip C is disclosed in Japanese Patent Application Laid-Open No. 64-28882 and the like. As described in the above, molding is performed by a transfer molding method.

However, in this transfer molding method, a semiconductor laser chip C is mounted on a support plate A, and then the semiconductor laser chip C and each of the lead terminals G and H are wire-bonded with a thin metal wire. These are sandwiched between a pair of molds, and the cavity of both molds is filled with a molten synthetic resin at a high pressure. When performing transfer molding in the mold part D, a semiconductor laser chip is used. C and each metal wire are made of molten synthetic resin pressure-filled in the cavity,
Since both the damage due to the pressure and the damage due to the heat are received at the same time, the performance of the semiconductor laser chip C is degraded, or the thin metal wire is cut, and the product is cut. There was a problem that the yield rate decreased.

According to the present invention, when a semiconductor laser chip portion is sealed with a synthetic resin mold portion, the performance of the semiconductor laser chip is degraded and the occurrence of cutting of a metal wire is reliably reduced. Mall that was made possible
It is an object of the present invention to provide a semiconductor laser device and a method of manufacturing the same.

[0006]

Means for Solving the Problems] mold type semiconductor laser device of the present invention to achieve this technical problem, "semiconductive
Body laser chip and the semiconductor laser chip mounted
Support and a laser beam connected to the semiconductor laser chip.
And at least the semiconductor laser chip
Enclose except for the laser emission direction, and
Transfer molding to embed lead terminals
And a resin frame . "Things
It is. In addition, the manufacturing method of the present invention may be configured such that “a support plate for mounting a semiconductor laser chip and a portion of each lead terminal for the semiconductor laser chip surround the semiconductor laser chip except for at least a laser emission direction thereof.
The formed synthetic resin frame is attached to the support plate and the support plate.
Transfer molding so as to embed the lead terminals and the lead terminals , and then mount and wire-bond the semiconductor laser chip to a support plate, and then, in a portion of the frame body facing the front cleavage plane in the semiconductor laser chip. A transparent plate such as a glass plate is fixed, and a sealing material made of a synthetic resin for the semiconductor laser chip is poured into the frame body in a liquid state and then cured. Is the thing.

[0007]

[ Operation ] As described above, a synthetic tree formed by transfer molding is used.
A support frame and lead terminals are embedded in a frame made of oil.
In addition, at least the semiconductor laser chip
With the exception of the laser emission direction,
A semiconductor laser is used for transfer molding of this frame.
Damage pressure and heat to the chip
After the synthetic resin frame is formed by transfer molding, the semiconductor laser chip is mounted, wire-bonded, and a transparent plate is fixed. the manufacturing of the sealing material, by curing after injected pouring in liquid, a portion of the semiconductor laser chip mounted on the support plate, the sealing material made of a synthetic resin in the frame body, the semiconductor laser chip By transfer molding
Sealing can be reliably performed without damaging pressure and heat .

[0008]

Therefore, according to the present invention, a semiconductor laser
Turns the device into a mold by transfer molding of synthetic resin
When configuring, the transfer molding of the synthetic resin
Due to the performance degradation of the semiconductor laser chip, it is possible to reliably reduce the occurrence of breaks in the metal wire connecting between the semiconductor laser chip and the lead terminal,
This has the effect of significantly improving the product yield.

[0009]

Embodiments of the present invention will be described below with reference to the drawings. First, FIGS. 1 to 8 show a first embodiment, in which reference numeral 1 indicates a lead frame made of a thin metal plate, and this lead frame 1 constitutes one semiconductor laser device. Three lead terminals 2, 3, 4 are integrally formed at appropriate intervals in the longitudinal direction, and a tip of the first lead terminal 2 located at the center of the three lead terminals 2, 3, 4. In addition, a rectangular support plate 5 also serving as a heat radiating plate is integrally formed.

During the transfer of the lead frame 1 along its longitudinal direction, three lead terminals 2
As shown in FIG. 2, a frame 6 having a substantially U-shape in plan view is integrally formed on the distal ends of the 3 and 4 by transfer molding of synthetic resin. At this time, the support plate 5 is exposed on the lower surface side of the frame 6. Then
As shown in FIG. 3, a submount 7 is mounted on the upper surface of the support plate 5, and a semiconductor laser chip 8 is mounted on the upper surface of the submount 7 from a front cleavage surface 8 a of the semiconductor laser chip 8. A light beam 9 is mounted laterally so as to be emitted in a direction opposite to the first lead terminal 2, and further, between the semiconductor laser chip 8 and the submount 7, and between the semiconductor laser chip 8 and the submount 7.
Wire bonding is performed between the lead terminals 3 and 4 to a thin metal wire (not shown).

Next, as shown in FIG. 4, a transparent plate 1 such as a glass plate facing the front cleavage surface 8a of the semiconductor laser chip 8 is provided on the front end surfaces of the support plate 5 and the frame 6.
0 is fixed with an adhesive or a metal solder for glass.
In the frame 6, as shown in FIG. 5, a first soft synthetic resin made of a relatively soft material such as silicone resin is used.
The semiconductor laser chip 8 and the submount 7 are covered with the first sealing material 11 by pouring and injecting the sealing material 11 in a liquid state.
1 is a front cleavage plane 8a of the semiconductor laser chip 8;
And between the transparent plate 10 and further,
The second sealing material 12 made of a synthetic resin such as an epoxy resin is also poured into the frame 6 in a liquid state and injected.

In this manner, the portion of the semiconductor laser chip 8 mounted on the support plate 5 is made of a synthetic resin frame 6 integrally formed with the support plate 5 as shown in FIGS. The first sealing material 11 and the second sealing material 12 made of synthetic resin can be securely sealed by the first sealing material 11 and the second sealing material 12 made of synthetic resin.
2 is not formed by transfer molding as in a conventional mold portion, but is formed inside a frame 6 integrally formed by transfer molding on the semiconductor laser chip 8 and the lead terminals 3 and 4 in advance. Since the synthetic resin is poured and injected in a liquid state and cured, the semiconductor laser chip 8 and each metal wire connected thereto are prevented from being damaged by pressure and heat as in the related art. You can.

FIGS. 9 to 12 show a second embodiment. In the second embodiment, the first lead terminal 2 provided with a support plate 5 at the end thereof is connected to the support plate 5 at the end. After being bent so as to be appropriately lower in size than the other second and third lead terminals 3 and 4, a synthetic resin frame 6 is integrally formed therewith by transfer molding. The other points are the same as those in the first embodiment. Thus, the support plate 5 at the tip of the first lead terminal 2 is appropriately dimensioned more than the other second and third lead terminals 3, 4. By lowering the bottom of the frame 6,
Since it can be completely closed, there is an advantage that the synthetic resin can be easily poured and injected into the frame 6 in a liquid state.

In the above embodiment, the sealing material for the semiconductor laser chip 8 is the first sealing material 11 and the second sealing material 1.
2, the present invention is not limited to this, and a light-transmitting synthetic resin is used as a sealing material, and the synthetic resin is placed in the frame body 6 so as to form a liquid. The support plate 5 may be provided with an extension 5a from the frame 6, and a mounting hole 5b may be formed in the extension 5a, as shown in FIG. Needless to say, it may be configured to pierce.

[Brief description of the drawings]

FIG. 1 is a perspective view of a lead frame used in a first embodiment of the present invention.

FIG. 2 is a perspective view showing a state where a frame is formed on the lead frame of FIG. 1;

FIG. 3 is a perspective view showing a state in which a semiconductor laser chip is mounted inside each frame of the lead frame of FIG. 1;

FIG. 4 is a perspective view showing a state in which a transparent plate is fixed to each frame of the lead frame of FIG. 1;

FIG. 5 is a sectional view taken along line VV of FIG. 4;

FIG. 6 is a vertical sectional front view of the semiconductor laser device manufactured according to the first embodiment;

FIG. 7 is a sectional view taken along the line VII-VII in FIG. 6;

8 is a sectional view taken along line VIII-VIII of FIG.

FIG. 9 is a perspective view of a lead frame used in a second embodiment of the present invention.

FIG. 10 is a perspective view showing a state where a first lead terminal of the lead frame of FIG. 9 is bent.

FIG. 11 is a perspective view showing a state where a frame is formed on the lead frame of FIG. 9;

12 is a sectional view taken along the line XII-XII in FIG.

FIG. 13 is a perspective view showing still another embodiment of the present invention.

FIG. 14 is a perspective view of a conventional molded semiconductor laser device.

FIG. 15 is a vertical sectional front view of a conventional molded semiconductor laser device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead frame 2, 3, 4 Lead terminal 5 Support plate 6 Frame 7 Submount 8 Semiconductor laser chip 10 Transparent plate 11 First sealing material 12 Second sealing material

Claims (3)

(57) [Claims] (1) Semiconductor laser chip and semiconductor laser
A support for mounting the chip, and the semiconductor laser chip;
Lead terminal connected to the semiconductor laser chip,
At least excluding its laser emission direction, and
Transfer so that the support and the lead terminals are embedded.
And a synthetic resin frame to be molded.
Mold type semiconductor laser device. (2) Semiconductor laser chip and semiconductor laser
A support for mounting the chip, and the semiconductor laser chip;
Lead terminal connected to the semiconductor laser chip,
At least excluding its laser emission direction, and
Transfer so that the support and the lead terminals are embedded.
A frame made of synthetic resin to be molded, and filling the frame.
Characterized by having a hardened synthetic resin sealing material
Semiconductor laser device. 3. The semiconductor laser chip is mounted on a supporting plate for mounting the semiconductor laser chip and at least a lead terminal for the semiconductor laser chip.
Synthetic resin frame configured to surround except for the emission direction
The support plate and the lead terminals are embedded in the frame.
Sea urchin and transfer molding, then subjected to mount and wire bonding of the semiconductor laser chip with respect to the support plate, then a transparent plate such as a glass plate on the front cleavage plane opposed to those in the semiconductor laser chip of the frame A method of manufacturing a mold-type semiconductor laser device, comprising: adhering, and injecting a sealing material made of a synthetic resin for the semiconductor laser chip in a liquid state into the inside of the frame, injecting the liquid, and then curing.