JP3217763B2 - Structure of semiconductor laser device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor laser device using a semiconductor laser chip as a light emitting element of a laser beam.

[0002]

2. Description of the Related Art Conventionally, this type of semiconductor laser device is described in, for example, Japanese Patent Application Laid-Open No. 64-28882 and has a first lead terminal B as shown in FIGS. A portion of the semiconductor laser chip C mounted on the support plate A made of a metal plate is sealed with a synthetic resin mold D having a light transmitting property, and the front of the mold D in the semiconductor laser chip C is sealed. The laser beam E is emitted in a coherent state by attaching a transparent plate F such as a glass plate to a portion where the laser beam E is emitted from the cleavage plane. The symbols G and H indicate the second and third lead terminals.

[0003]

Incidentally, in this conventional semiconductor laser device, a synthetic resin molded body D for sealing the semiconductor laser chip C is disclosed in Japanese Patent Application Laid-Open No. 64-28882 or the like. As described above, by molding using a synthetic resin transfer molding method, a support plate A on which a semiconductor laser chip C is mounted and lead terminals G and H for the semiconductor laser chip C are formed in this molded body D. Are strongly connected.

However, in this transfer molding method, a semiconductor laser chip C is mounted on a support plate A, and then the semiconductor laser chip C and each of the lead terminals G and H are wire-bonded with a thin metal wire. These are sandwiched by a pair of molds, and the cavity of both molds is filled with a synthetic resin in a molten state at a high pressure. C and each metal wire are made of molten synthetic resin pressure-filled in the cavity,
Since both the damage due to the pressure and the damage due to the heat are received at the same time, the performance of the semiconductor laser chip C is degraded, or the thin metal wire is cut, and the product is cut. There was a problem that the yield rate decreased.

In the conventional semiconductor laser device, since the entire support plate A on which the semiconductor laser chip C is mounted is embedded in the synthetic resin mold body D, There is also a problem that heat dissipation from the semiconductor laser chip is low.

An object of the present invention is to provide a structure of a semiconductor laser device which solves these problems.

[0007]

In order to achieve the technical object, the present invention provides a semiconductor laser chip, a support plate made of a metal plate on which the semiconductor laser chip is mounted, and a lead connected to the semiconductor laser chip. In the semiconductor laser device provided with a terminal, the semiconductor laser chip is formed into a frame shape that surrounds the periphery of the semiconductor laser chip except for the laser emission direction, and is formed by transfer molding with a synthetic resin so as to embed the support plate and the lead terminal. And a mounting piece is integrally provided on the support plate such that the mounting piece protrudes from the frame body. "

[0008]

[Operation] In this way, the molded body formed by the transfer molding of the synthetic resin is used, in addition to the fact that the support plate and the lead terminal can be firmly connected to each other. When the molded body is formed by transfer molding of a synthetic resin, the semiconductor laser chip is prevented from being blocked by the frame when the mold is formed by transfer molding of a synthetic resin. As a result, it is possible to avoid applying pressure and heat load during transfer molding, so that the product yield can be improved.

The mounting piece is integrally provided on the support on which the semiconductor laser chip is mounted such that the mounting piece protrudes from the synthetic resin mold part. Since it can also be used for heat dissipation from the semiconductor laser chip, high heat dissipation can be provided.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS.

In FIG. 1, reference numeral 1 denotes a support plate 5 made of a metal plate. The support plate 5 is provided with first lead terminals 2 integrally therewith.
The lead terminal 3 and the third lead terminal 4 are arranged in parallel.

A submount 7 is provided on the upper surface of the support plate 5.
The semiconductor laser chip 8 is mounted on the upper surface of the submount 7 so that the laser beam 9 from the front cleavage surface 8a of the semiconductor laser chip 8 is emitted in a direction opposite to the first lead terminal 2. The semiconductor laser chip 8 and the sub-mount 7 and the second and third lead terminals 3 and 4 are wire-bonded with a thin metal wire (not shown). I have.

Reference numeral 6 denotes a molded body formed by transfer molding of a synthetic resin. The molded body 6 emits a laser beam from a front cleavage surface 8a of the semiconductor laser chip 8 in the periphery of the semiconductor laser chip 8 and the submount 7. It is formed in a frame shape so as to surround it except for the direction, and the support plate 5, the second lead 3, and the third lead terminal 4 are embedded in the molded body 6.

Further, on both left and right sides of the support plate 5, mounting pieces 5a formed by drilling mounting holes 5b are integrally provided, and these mounting pieces 5a are directed outward from the side faces of the mold body 6. It is constituted so that it may protrude.

In this configuration, the molded body 6 formed by transfer molding of the synthetic resin is provided with the support plate 5 and the lead terminals 3 and 4 embedded therein, and the surroundings of the semiconductor laser chip 8 and the submount 7 are formed. Since the frame is formed so as to surround except for the laser emission direction, the laser emission direction of the semiconductor laser chip 8 is blocked by the frame when the molded body 6 is subjected to transfer molding of synthetic resin. Under the prevented state, it is possible to avoid applying pressure and heat load during transfer molding to the semiconductor laser chip 8 and the submount 7.

The support plate 5 embedded in the mold part 6 is provided with a mounting piece 5a integrally provided so as to protrude from the mold part, so that the semiconductor laser chip 8 and the submount 7 are provided. Can be quickly dissipated through the mounting piece 5.

When it is necessary to completely seal the semiconductor laser chip 8 and the submount 7 surrounded by the mold 6, the inside of the frame mold 6 is made of a material such as silicon resin. The semiconductor laser chip 8 and the submount 7 are covered with the first sealing material 11 by pouring and injecting a first sealing material 11 made of a relatively soft translucent synthetic resin into a liquid state. The first sealing material 11 is filled so as to fill the space between the front cleavage plane 8a of the semiconductor laser chip 8 and the transparent plate 10, and the frame 6 is made of a synthetic resin such as an epoxy resin. What is necessary is just to pour and inject the second sealing material 12 in the same liquid state.

The first sealing material 11 and the second sealing material 12 made of a synthetic resin are not formed by transfer molding as in a conventional molding part, but are formed by a semiconductor laser chip 8 and lead terminals 3. , 4 in which the synthetic resin is poured in a liquid state into the inside of the mold body 6 by transfer molding of the synthetic resin in advance and is hardened, so that the semiconductor laser chip 8 and the submount 7 and the The connected metal wires are not damaged by pressure and heat as in the related art, and the front end surface of the mold body 6 is opposed to the front cleavage surface 8a of the semiconductor laser chip 8. The transparent plate 10 such as a glass plate to be formed may be fixed by an adhesive or a metal solder for glass.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an embodiment of the present invention.

FIG. 2 is an enlarged vertical sectional front view of FIG. 1;

FIG. 3 is a sectional view taken along line VII-VII of FIG. 2;

FIG. 4 is a sectional view taken along line VIII-VIII of FIG. 2;

FIG. 5 is a perspective view showing a conventional molded semiconductor laser device.

FIG. 6 is a vertical sectional front view of a conventional molded semiconductor laser device.

[Explanation of symbols]

 2, 3, 4 Lead terminal 5 Support plate 6 Mold body 7 Submount 8 Semiconductor laser chip 5a Mounting piece

Claims (1)

(57) [Claims] 1. A semiconductor laser device comprising: a semiconductor laser chip; a support plate made of a metal plate on which the semiconductor laser chip is mounted; and a lead terminal connected to the semiconductor laser chip. Out of which, the laser emission direction is to be a frame type surrounding, and, further comprising a molded body which is transfer-molded with a synthetic resin so as to embed the support plate and the lead terminals, and further, the support plate, a mounting piece, A structure of a semiconductor laser device, wherein the mounting piece is integrally provided so as to protrude from the frame.