JPS5868992A - 半導体発光素子装置 - Google Patents

半導体発光素子装置

Info

Publication number
JPS5868992A
JPS5868992A JP56166378A JP16637881A JPS5868992A JP S5868992 A JPS5868992 A JP S5868992A JP 56166378 A JP56166378 A JP 56166378A JP 16637881 A JP16637881 A JP 16637881A JP S5868992 A JPS5868992 A JP S5868992A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
resin
resin base
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56166378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244876B2 (cg-RX-API-DMAC10.html
Inventor
Iwao Matsumoto
松本　岩夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56166378A priority Critical patent/JPS5868992A/ja
Publication of JPS5868992A publication Critical patent/JPS5868992A/ja
Publication of JPS6244876B2 publication Critical patent/JPS6244876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/0198—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Led Device Packages (AREA)
JP56166378A 1981-10-20 1981-10-20 半導体発光素子装置 Granted JPS5868992A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56166378A JPS5868992A (ja) 1981-10-20 1981-10-20 半導体発光素子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56166378A JPS5868992A (ja) 1981-10-20 1981-10-20 半導体発光素子装置

Publications (2)

Publication Number Publication Date
JPS5868992A true JPS5868992A (ja) 1983-04-25
JPS6244876B2 JPS6244876B2 (cg-RX-API-DMAC10.html) 1987-09-22

Family

ID=15830299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56166378A Granted JPS5868992A (ja) 1981-10-20 1981-10-20 半導体発光素子装置

Country Status (1)

Country Link
JP (1) JPS5868992A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677614B1 (en) * 1992-12-17 2004-01-13 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US6808950B2 (en) * 1992-12-17 2004-10-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
JP2011044718A (ja) * 2002-12-06 2011-03-03 Cree Inc １つの小さい設置面積を有するｌｅｄパッケージダイ
WO2012169147A1 (ja) * 2011-06-07 2012-12-13 パナソニック株式会社 光半導体パッケージおよびその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677614B1 (en) * 1992-12-17 2004-01-13 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US6808950B2 (en) * 1992-12-17 2004-10-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7094619B2 (en) 1992-12-17 2006-08-22 Kabushiki Kaisha Toshiba Method of fabricating a light emitting device
US7288795B2 (en) 1992-12-17 2007-10-30 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7297984B2 (en) 1992-12-17 2007-11-20 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7315046B2 (en) 1992-12-17 2008-01-01 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
JP2011044718A (ja) * 2002-12-06 2011-03-03 Cree Inc １つの小さい設置面積を有するｌｅｄパッケージダイ
WO2012169147A1 (ja) * 2011-06-07 2012-12-13 パナソニック株式会社 光半導体パッケージおよびその製造方法
JPWO2012169147A1 (ja) * 2011-06-07 2015-02-23 パナソニック株式会社 光半導体パッケージおよびその製造方法
US9018658B2 (en) 2011-06-07 2015-04-28 Panasonic Intellectual Property Management Co., Ltd. Optical semiconductor package and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6244876B2 (cg-RX-API-DMAC10.html) 1987-09-22

Similar Documents

Publication Publication Date Title
KR20060054302A (ko) 리드프레임 상에 오버몰딩된 렌즈와 리드프레임 상에렌즈를 오버몰딩하는 방법
JP3659635B2 (ja) 光半導体装置
JP2002093202A (ja) 面発光バックライト装置の製造方法及び面発光バックライト装置
JPH11274447A (ja) 全モールド型固体撮像装置およびその製造方法
JPS5868992A (ja) 半導体発光素子装置
JPH0142511B2 (cg-RX-API-DMAC10.html)
JP3127584B2 (ja) 樹脂製中空パッケージを用いた半導体装置
US3194953A (en) Encapsulated lamp construction
JPS5868991A (ja) 半導体発光素子装置用ステムの製造方法
TWI559577B (zh) SMT type LED package element, its manufacturing method and light emitting device
JPS58103183A (ja) ステムの製造方法
JP2948382B2 (ja) パッケージ型半導体レーザ装置
JPH0337192B2 (cg-RX-API-DMAC10.html)
JPS63293584A (ja) 発光表示体
JP2594207B2 (ja) 表面実装型ｌｅｄの製造方法
JPS6273785A (ja) 発光素子
JPS58194382A (ja) 発光装置用電極構体
JPS5925292A (ja) 半導体レ−ザ装置
JPH05129730A (ja) モールド型半導体レーザ装置
JPS60137076A (ja) 光半導体装置
JPH036939Y2 (cg-RX-API-DMAC10.html)
JPS62209Y2 (cg-RX-API-DMAC10.html)
JPH0329382A (ja) Ｌｅｄランプの製造方法
JPH05291626A (ja) 発光光学部品
JPH036940Y2 (cg-RX-API-DMAC10.html)