JPS5856343A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5856343A
JPS5856343A JP15458381A JP15458381A JPS5856343A JP S5856343 A JPS5856343 A JP S5856343A JP 15458381 A JP15458381 A JP 15458381A JP 15458381 A JP15458381 A JP 15458381A JP S5856343 A JPS5856343 A JP S5856343A
Authority
JP
Japan
Prior art keywords
heat treatment
temperature
wafer
semiconductor device
crystal defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15458381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0119265B2 (enrdf_load_stackoverflow
Inventor
Kazunori Imaoka
今岡　和典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15458381A priority Critical patent/JPS5856343A/ja
Publication of JPS5856343A publication Critical patent/JPS5856343A/ja
Publication of JPH0119265B2 publication Critical patent/JPH0119265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15458381A 1981-09-29 1981-09-29 半導体装置の製造方法 Granted JPS5856343A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15458381A JPS5856343A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15458381A JPS5856343A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856343A true JPS5856343A (ja) 1983-04-04
JPH0119265B2 JPH0119265B2 (enrdf_load_stackoverflow) 1989-04-11

Family

ID=15587374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15458381A Granted JPS5856343A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856343A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法
JPS58501927A (ja) * 1981-12-31 1983-11-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン シリコン・ウエハ中の酸素析出を減少させるための方法
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH0897222A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法およびシリコンウェーハ
EP2345753A1 (en) * 2009-12-29 2011-07-20 Siltronic AG Silicon wafer and production method therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2838865B1 (fr) * 2002-04-23 2005-10-14 Soitec Silicon On Insulator Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法
JPS58501927A (ja) * 1981-12-31 1983-11-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン シリコン・ウエハ中の酸素析出を減少させるための方法
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH0897222A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法およびシリコンウェーハ
EP2345753A1 (en) * 2009-12-29 2011-07-20 Siltronic AG Silicon wafer and production method therefor
US8357939B2 (en) 2009-12-29 2013-01-22 Siltronic Ag Silicon wafer and production method therefor

Also Published As

Publication number Publication date
JPH0119265B2 (enrdf_load_stackoverflow) 1989-04-11

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