JPS58502078A - 半導体装置の製造方法およびそうして得られる半導体装置 - Google Patents
半導体装置の製造方法およびそうして得られる半導体装置Info
- Publication number
- JPS58502078A JPS58502078A JP83500001A JP50000183A JPS58502078A JP S58502078 A JPS58502078 A JP S58502078A JP 83500001 A JP83500001 A JP 83500001A JP 50000183 A JP50000183 A JP 50000183A JP S58502078 A JPS58502078 A JP S58502078A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silver
- temperature
- paste
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 105
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 73
- 229910052709 silver Inorganic materials 0.000 claims description 71
- 239000004332 silver Substances 0.000 claims description 71
- 229910052782 aluminium Inorganic materials 0.000 claims description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 30
- 238000001723 curing Methods 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229920000137 polyphosphoric acid Polymers 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 238000003486 chemical etching Methods 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 7
- -1 phosphorus compound Chemical class 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052705 radium Inorganic materials 0.000 claims description 5
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 229960000583 acetic acid Drugs 0.000 claims description 3
- 239000008119 colloidal silica Substances 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 229910003087 TiOx Inorganic materials 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 229920002301 cellulose acetate Polymers 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 46
- 230000000414 obstructive effect Effects 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- 239000011260 aqueous acid Substances 0.000 claims 1
- 238000006664 bond formation reaction Methods 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 150000002170 ethers Chemical class 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 235000012431 wafers Nutrition 0.000 description 21
- 241000257465 Echinoidea Species 0.000 description 13
- 238000001465 metallisation Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 10
- 240000004808 Saccharomyces cerevisiae Species 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000002452 interceptive effect Effects 0.000 description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000012216 screening Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 235000011007 phosphoric acid Nutrition 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000013519 translation Methods 0.000 description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 125000004494 ethyl ester group Chemical group 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- FXRJDJNKKJZYNN-UHFFFAOYSA-N 1-(2-hydroxyethoxy)butan-2-ol Chemical compound CCC(O)COCCO FXRJDJNKKJZYNN-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 241000370685 Arge Species 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 241001620634 Roger Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000002894 chemical waste Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000001495 ethyl group Chemical class [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- REOJLIXKJWXUGB-UHFFFAOYSA-N mofebutazone Chemical group O=C1C(CCCC)C(=O)NN1C1=CC=CC=C1 REOJLIXKJWXUGB-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
Landscapes
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU8383139EEFR | 1981-12-10 | ||
| LU83831A LU83831A1 (fr) | 1981-12-10 | 1981-12-10 | Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus |
| PCT/BE1982/000024 WO1983002200A1 (en) | 1981-12-10 | 1982-12-09 | Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58502078A true JPS58502078A (ja) | 1983-12-01 |
Family
ID=19729782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP83500001A Pending JPS58502078A (ja) | 1981-12-10 | 1982-12-09 | 半導体装置の製造方法およびそうして得られる半導体装置 |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0108065B1 (OSRAM) |
| JP (1) | JPS58502078A (OSRAM) |
| DE (1) | DE3274927D1 (OSRAM) |
| ES (2) | ES8405557A1 (OSRAM) |
| GR (1) | GR79601B (OSRAM) |
| IT (1) | IT1191122B (OSRAM) |
| LU (1) | LU83831A1 (OSRAM) |
| PT (1) | PT75974B (OSRAM) |
| WO (1) | WO1983002200A1 (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05502759A (ja) * | 1990-08-01 | 1993-05-13 | エイエスイー・アメリカス・インコーポレーテッド | 蒸着接点を太陽電池に付与する方法 |
| JP2005506705A (ja) * | 2001-10-10 | 2005-03-03 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | エッチングおよびドーピング複合物質 |
| JP2005510885A (ja) * | 2001-11-26 | 2005-04-21 | シェル・ゾラール・ゲーエムベーハー | 背面接点を有する太陽電池の製造 |
| JP2005184025A (ja) * | 2005-02-03 | 2005-07-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
| DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| JP5687837B2 (ja) * | 2007-02-16 | 2015-03-25 | ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ | 太陽電池構造体、光起電モジュール及びこれらに対応する方法 |
| TWI449183B (zh) * | 2007-06-13 | 2014-08-11 | Schott Solar Ag | 半導體元件及製造金屬半導體接點之方法 |
| WO2012067117A1 (ja) * | 2010-11-17 | 2012-05-24 | 日立化成工業株式会社 | 太陽電池の製造方法 |
| US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2412164A1 (fr) * | 1977-12-13 | 1979-07-13 | Radiotechnique Compelec | Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede |
| US4158591A (en) * | 1978-04-24 | 1979-06-19 | Atlantic Richfield Company | Solar cell manufacture |
| US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
-
1981
- 1981-12-10 LU LU83831A patent/LU83831A1/fr unknown
-
1982
- 1982-12-09 EP EP83900009A patent/EP0108065B1/en not_active Expired
- 1982-12-09 JP JP83500001A patent/JPS58502078A/ja active Pending
- 1982-12-09 DE DE8383900009T patent/DE3274927D1/de not_active Expired
- 1982-12-09 WO PCT/BE1982/000024 patent/WO1983002200A1/en active IP Right Grant
- 1982-12-09 GR GR70029A patent/GR79601B/el unknown
- 1982-12-10 ES ES518107A patent/ES8405557A1/es not_active Expired
- 1982-12-10 PT PT75974A patent/PT75974B/pt not_active IP Right Cessation
- 1982-12-10 IT IT24680/82A patent/IT1191122B/it active
-
1984
- 1984-03-01 ES ES530223A patent/ES8501169A1/es not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05502759A (ja) * | 1990-08-01 | 1993-05-13 | エイエスイー・アメリカス・インコーポレーテッド | 蒸着接点を太陽電池に付与する方法 |
| JP2005506705A (ja) * | 2001-10-10 | 2005-03-03 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | エッチングおよびドーピング複合物質 |
| JP2005510885A (ja) * | 2001-11-26 | 2005-04-21 | シェル・ゾラール・ゲーエムベーハー | 背面接点を有する太陽電池の製造 |
| JP2005184025A (ja) * | 2005-02-03 | 2005-07-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0108065B1 (en) | 1986-12-30 |
| PT75974A (fr) | 1983-01-01 |
| IT8224680A1 (it) | 1984-06-10 |
| IT8224680A0 (it) | 1982-12-10 |
| LU83831A1 (fr) | 1983-09-01 |
| DE3274927D1 (en) | 1987-02-05 |
| ES530223A0 (es) | 1984-11-01 |
| ES518107A0 (es) | 1984-06-01 |
| ES8501169A1 (es) | 1984-11-01 |
| WO1983002200A1 (en) | 1983-06-23 |
| ES8405557A1 (es) | 1984-06-01 |
| IT1191122B (it) | 1988-02-24 |
| GR79601B (OSRAM) | 1984-10-31 |
| PT75974B (fr) | 1985-11-18 |
| EP0108065A1 (en) | 1984-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4361950A (en) | Method of making solar cell with wrap-around electrode | |
| EP2595197B1 (en) | Method for producing solar cell and film-producing device | |
| US6071437A (en) | Electrically conductive composition for a solar cell | |
| JPH07501184A (ja) | 改良した太陽電池及びその製作方法 | |
| EP0006810A1 (fr) | Procédé de fabrication d'un circuit intégré hybride | |
| JP3303975B2 (ja) | オーミックコンタクト及びオーミックコンタクトを有する光電池の製造方法 | |
| JPH057872B2 (OSRAM) | ||
| TWI401808B (zh) | 糊狀組成物，電極及具備該電極之太陽電池元件 | |
| JPS58502078A (ja) | 半導体装置の製造方法およびそうして得られる半導体装置 | |
| US8197718B2 (en) | Paste composition and solar cell element using the same | |
| US9024179B2 (en) | Solderable polymer thick film conductive electrode composition for use in thin-film photovoltaic cells and other applications | |
| JPH0364964B2 (OSRAM) | ||
| RU2570814C2 (ru) | Способ изготовления солнечного элемента и солнечный элемент | |
| DE3790981B4 (de) | Verfahren zum Herstellen einer Photovoltaik-Solarzelle | |
| JP3566901B2 (ja) | 太陽電池の製造方法 | |
| JP2006229178A (ja) | 絶縁コーティング層を有する半導性チップ素子及びその製造方法 | |
| JP6875252B2 (ja) | ポリイミドペーストの乾燥方法及び高光電変換効率太陽電池の製造方法 | |
| JP4808994B2 (ja) | 太陽電池の製造方法 | |
| JPS6169178A (ja) | 太陽電池の製造方法 | |
| JPS60227483A (ja) | 太陽電池 | |
| JP2006032680A (ja) | 太陽電池の製造方法 | |
| JPS59168669A (ja) | 電極用ペースト材料 | |
| JPS60227482A (ja) | 太陽電池の製造方法 | |
| CN110600375A (zh) | 一种半导体元件制造方法 | |
| JP2002314103A (ja) | 太陽電池の製造方法 |