IT1191122B - Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti - Google Patents

Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti

Info

Publication number
IT1191122B
IT1191122B IT24680/82A IT2468082A IT1191122B IT 1191122 B IT1191122 B IT 1191122B IT 24680/82 A IT24680/82 A IT 24680/82A IT 2468082 A IT2468082 A IT 2468082A IT 1191122 B IT1191122 B IT 1191122B
Authority
IT
Italy
Prior art keywords
devices
semi
manufacturing procedure
semiconductive
conductive
Prior art date
Application number
IT24680/82A
Other languages
English (en)
Italian (it)
Other versions
IT8224680A1 (it
IT8224680A0 (it
Inventor
Louis Frisson
Robert Janssens
Mia Honore
Robert Pierre Mertens
Overstraeten Roger Van
Original Assignee
Belge Etat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Belge Etat filed Critical Belge Etat
Publication of IT8224680A0 publication Critical patent/IT8224680A0/it
Publication of IT8224680A1 publication Critical patent/IT8224680A1/it
Application granted granted Critical
Publication of IT1191122B publication Critical patent/IT1191122B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
IT24680/82A 1981-12-10 1982-12-10 Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti IT1191122B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LU83831A LU83831A1 (fr) 1981-12-10 1981-12-10 Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus

Publications (3)

Publication Number Publication Date
IT8224680A0 IT8224680A0 (it) 1982-12-10
IT8224680A1 IT8224680A1 (it) 1984-06-10
IT1191122B true IT1191122B (it) 1988-02-24

Family

ID=19729782

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24680/82A IT1191122B (it) 1981-12-10 1982-12-10 Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti

Country Status (9)

Country Link
EP (1) EP0108065B1 (OSRAM)
JP (1) JPS58502078A (OSRAM)
DE (1) DE3274927D1 (OSRAM)
ES (2) ES8405557A1 (OSRAM)
GR (1) GR79601B (OSRAM)
IT (1) IT1191122B (OSRAM)
LU (1) LU83831A1 (OSRAM)
PT (1) PT75974B (OSRAM)
WO (1) WO1983002200A1 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151386A (en) * 1990-08-01 1992-09-29 Mobil Solar Energy Corporation Method of applying metallized contacts to a solar cell
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
DE19910816A1 (de) 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
ES2289168T3 (es) * 2001-11-26 2008-02-01 Shell Solar Gmbh Celula solar con contactos en la parte posterior y su procedimiento de fabricacion.
JP3926822B2 (ja) * 2005-02-03 2007-06-06 三菱電機株式会社 半導体装置及び半導体装置の製造方法
JP5687837B2 (ja) * 2007-02-16 2015-03-25 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ 太陽電池構造体、光起電モジュール及びこれらに対応する方法
TWI449183B (zh) * 2007-06-13 2014-08-11 Schott Solar Ag 半導體元件及製造金屬半導體接點之方法
WO2012067117A1 (ja) * 2010-11-17 2012-05-24 日立化成工業株式会社 太陽電池の製造方法
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412164A1 (fr) * 1977-12-13 1979-07-13 Radiotechnique Compelec Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede
US4158591A (en) * 1978-04-24 1979-06-19 Atlantic Richfield Company Solar cell manufacture
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
EP0108065B1 (en) 1986-12-30
PT75974A (fr) 1983-01-01
IT8224680A1 (it) 1984-06-10
IT8224680A0 (it) 1982-12-10
LU83831A1 (fr) 1983-09-01
DE3274927D1 (en) 1987-02-05
ES530223A0 (es) 1984-11-01
ES518107A0 (es) 1984-06-01
ES8501169A1 (es) 1984-11-01
WO1983002200A1 (en) 1983-06-23
ES8405557A1 (es) 1984-06-01
GR79601B (OSRAM) 1984-10-31
PT75974B (fr) 1985-11-18
EP0108065A1 (en) 1984-05-16
JPS58502078A (ja) 1983-12-01

Similar Documents

Publication Publication Date Title
IT1223135B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso
IT1066832B (it) Metodo per la fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
IT1137408B (it) Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
JPS55108752A (en) Semiconductor device and method of fabricating same
DE3270703D1 (en) Field effect semiconductor device and method of manufacturing such a device
IT1085067B (it) Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
IT1172413B (it) Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
JPS5567172A (en) Method of fabricating semiconductor and semiconductor device
JPS5623779A (en) Semiconductor device and method of manufacturing same
IT7969499A0 (it) Procedimento e dispositivo per la fabbricazione di cerniere lampo
DE3069594D1 (en) Semiconductor device and method of manufacturing the same
JPS54158190A (en) Semiconductor device and method of fabricating same
GB2030002B (en) Semiconductor devices and methods of manufacturing them
IT1086058B (it) Metodo di fabbricazione di un dispositivi semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
JPS5650578A (en) Semiconductor device and method of manufacturing same
IT1078440B (it) Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo fabbricato con l'ausilio di tale metodo
IT1191122B (it) Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti
IT1086123B (it) Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
JPS55105375A (en) Nonnvolatile semiconductor memory element and method of fabricating same
IT1110092B (it) Stampo e procedimento per l'incapsulamento a trasferimento di dispositivi elettronici a semiconduttori
FR2555846B1 (fr) Reperage electrique d'imageurs a semi-conducteurs
DE3264580D1 (en) Semiconductor device and method of manufacturing the same
GB2104722B (en) Mos semiconductor device and method of manufacturing the same
JPS54136281A (en) Semiconductor device and method of fabricating same
IT7919362A0 (it) Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso.