IT7919362A0 - Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso. - Google Patents

Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso.

Info

Publication number
IT7919362A0
IT7919362A0 IT7919362A IT1936279A IT7919362A0 IT 7919362 A0 IT7919362 A0 IT 7919362A0 IT 7919362 A IT7919362 A IT 7919362A IT 1936279 A IT1936279 A IT 1936279A IT 7919362 A0 IT7919362 A0 IT 7919362A0
Authority
IT
Italy
Prior art keywords
manufacture
semiconductor device
integrated circuit
circuit semiconductor
integrated
Prior art date
Application number
IT7919362A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7919362A0 publication Critical patent/IT7919362A0/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/916Autodoping control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT7919362A 1978-02-15 1979-01-17 Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso. IT7919362A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/877,856 US4170501A (en) 1978-02-15 1978-02-15 Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition

Publications (1)

Publication Number Publication Date
IT7919362A0 true IT7919362A0 (it) 1979-01-17

Family

ID=25370869

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7919362A IT7919362A0 (it) 1978-02-15 1979-01-17 Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso.

Country Status (5)

Country Link
US (1) US4170501A (it)
JP (1) JPS5585052A (it)
DE (1) DE2904480B2 (it)
IT (1) IT7919362A0 (it)
SE (1) SE7900229L (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
JPS5676560A (en) * 1979-11-28 1981-06-24 Hitachi Ltd Semiconductor device
JPS57136342A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of semiconductor device
US4487653A (en) * 1984-03-19 1984-12-11 Advanced Micro Devices, Inc. Process for forming and locating buried layers
US5055417A (en) * 1987-06-11 1991-10-08 National Semiconductor Corporation Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
US5243214A (en) * 1992-04-14 1993-09-07 North American Philips Corp. Power integrated circuit with latch-up prevention
JP3353277B2 (ja) * 1992-09-25 2002-12-03 ソニー株式会社 エピタキシャルウェハの製造方法
JP2647057B2 (ja) * 1995-06-02 1997-08-27 日本電気株式会社 半導体装置
JP3409548B2 (ja) 1995-12-12 2003-05-26 ソニー株式会社 半導体装置の製造方法
US5731619A (en) * 1996-05-22 1998-03-24 International Business Machines Corporation CMOS structure with FETS having isolated wells with merged depletions and methods of making same
DE102017121693B4 (de) 2017-09-19 2022-12-08 Infineon Technologies Ag Dotierungsverfahren

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL273009A (it) * 1960-12-29
GB1050478A (it) * 1962-10-08
US3479233A (en) * 1967-01-16 1969-11-18 Ibm Method for simultaneously forming a buried layer and surface connection in semiconductor devices
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
FR2041710B1 (it) * 1969-05-08 1974-06-14 Radiotechnique Compelec
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
US3885998A (en) * 1969-12-05 1975-05-27 Siemens Ag Method for the simultaneous formation of semiconductor components with individually tailored isolation regions
DE2044863A1 (de) * 1970-09-10 1972-03-23 Siemens Ag Verfahren zur Herstellung von Schottkydioden
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
US3961340A (en) * 1971-11-22 1976-06-01 U.S. Philips Corporation Integrated circuit having bipolar transistors and method of manufacturing said circuit
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS51132784A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of semiconductor device
JPS5261976A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production

Also Published As

Publication number Publication date
SE7900229L (sv) 1979-08-16
DE2904480B2 (de) 1981-02-19
US4170501A (en) 1979-10-09
JPS5585052A (en) 1980-06-26
DE2904480A1 (de) 1979-08-16

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