JPH05502759A - 蒸着接点を太陽電池に付与する方法 - Google Patents
蒸着接点を太陽電池に付与する方法Info
- Publication number
- JPH05502759A JPH05502759A JP3512445A JP51244591A JPH05502759A JP H05502759 A JPH05502759 A JP H05502759A JP 3512445 A JP3512445 A JP 3512445A JP 51244591 A JP51244591 A JP 51244591A JP H05502759 A JPH05502759 A JP H05502759A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ink
- pad
- printing ink
- printing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 191
- 238000000034 method Methods 0.000 claims description 102
- 238000007639 printing Methods 0.000 claims description 102
- 229910052709 silver Inorganic materials 0.000 claims description 38
- 239000004332 silver Substances 0.000 claims description 38
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 37
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 241000238413 Octopus Species 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 14
- 239000011230 binding agent Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000000976 ink Substances 0.000 description 128
- 238000007650 screen-printing Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- 238000013519 translation Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004945 silicone rubber Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
- 239000005041 Mylar™ Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007649 pad printing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 241001313288 Labia Species 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 235000001270 Allium sibiricum Nutrition 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 organic acid salt Chemical class 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
- Printing Methods (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (24)
- 1.蒸着導体を半導体基板の面に付与する方法にして、(a)タコ印刷装置であ って、(1)半導体基板の面に付与される蒸着導体の寸法及び形状に対応する寸 法及び形状を有するキャビティがエッチング腐食された上面を有する板と、(2 )可撓性パッドと、(3)半導体基板を解放可能に支持する支持体であって、前 記板に隣接しかつ前記板に対し固定状態に配置された支持体とを備えるタコ印刷 装置を提供する段階と、(b)前記基板の片面が露出されるように半導体基板を 前記支持体上に配置する段階と、 (c)前記板の前記キャビティに金属を含む印刷インキを充填する段階と、(d )前記パッドで前記板に接触し、前記印刷インキが前記パッドに接着するのを許 容する段階と、 (e)前記パッドを動かし、前記基板の片面に係合させる段階と、(f)前記パ ッドを動かし、前記基板と非接触状態にし、これにより、前記印刷インキが前記 片面に転写されるようにする段階とを備えることを特徴とする方法。
- 2.請求の範囲第1項に記載の方法にして、前記印刷インキが、熱分解型バイン ダと、揮発性溶剤とを含み、前記基板を加熱し、前記印刷インキの金属成分を前 記片面に強固に接着させる段階を更に備えることを特徴とする方法。
- 3.請求の範囲第1項に記載の方法にして、前記基板の前記片面の1又は2以上 の選択された部分を物理的にマスキングし、前記パッドが前記片面の1又は2以 上の選択された部分に前記印刷インキを付与するのを阻止するようにする段階を 更に備えることを特徴とする方法。
- 4.請求の範囲第1項に記載の方法にして、前記パッドの組成及び形状、前記キ ャビティの深さ及び前記印刷インキの組成が、前記印刷インキが前記基板の前記 片面に2−4ミルの範囲の均一な厚さで転写されるように選択されることを特徴 とする方法。
- 5.請求の範囲第1項に記載の方法にして、提供される前記パッドが、15乃至 40(ショア硬度00スケール)の範囲のジュロメータ硬度を有することを特徴 とする方法。
- 6.請求の範囲第5項に記載の方法にして、前記ジュロメータ硬度が約20(シ ョア硬度00スケール)であることを特徴とする方法。
- 7.請求の範囲第1項に記載の方法にして、前記段階(d)、(e)及び(f) が、一群として1又は2回以上反復され、多数の印刷インキ層を前記基板に付与 することを特徴とする方法。
- 8.請求の範囲第1項に記載の方法にして、前記インキが25℃で約50ポイズ の粘度及び10/秒のせん断速度を備えることを特徴とする方法。
- 9.請求の範囲第1項に記載の方法にして、前記基板が表面と、前記表面を被覆 する絶縁層とを備え、前記片面が前記絶縁層の面であり、前記インキを加熱し、 前記インキを前記絶縁層に貫入させ、前記基板に対する抵抗接点を形成するよう にする段階を更に備えることを特徴とする方法。
- 10.請求の範囲第1項に記載の方法にして、段階(e)の前、前記基板の前記 片面の少なくとも1つの選択された部分をマスキングし、前記パッドにより前記 金属印刷インキが前記片面の前記少なくとも選択された部分に付与されるのを阻 止し、段階(f)の後、前記マスクを除去し、前記基板を加熱し、前記印刷イン キの金属成分を金属層として前記片面に強固に接着させることを特徴とする方法 。
- 11.請求の範囲第10項に記載の方法にして、前記印刷インキが熱分解型バイ ンダと、揮発性溶剤とを含み、前記バインダ及び溶剤が前記インキから除去され 、前記金属成分が前記片面に冶金的に結合されるような状態で前記基板を加熱す ることを更に特徴とする方法。
- 12.請求の範囲第10項に記載の方法にして、第2の金属印刷インキが前記片 面の前記少なくとも1つの選択された部分に付与され、前記第2の金属印刷イン キを加熱して、前記第2のインキの金属成分が前記基板に接着されるようにする ことを特徴とする方法。
- 13.請求の範囲第12項に記載の方法にして、前記第1のインキがアルミニウ ムを含むインキであり、前記第2のインキが銀を含むインキであることを特徴と する方法。
- 14.請求の範囲第10項に記載の方法にして、前記片面の前記少なくとも1つ の選択された部分が少なくとも2つの相互に離間した部分を備えることを特徴と する方法。
- 15.請求の範囲第12項に記載の方法にして、前記第2のインキが前記片面の 相互に離間した部分及び前記金属層の隣接部分を被覆し得るように付与されるこ とを特徴とする方法。
- 16.請求の範囲第1項に記載の方法にして、前記基板がその反対面に隣接する 浅い接合部を備え、前記反対面上に銀電極を形成する段階を更に備えることを特 徴とする方法。
- 17.請求の範囲第16項に記載の方法にして、前記銀電極がタコ印刷により形 成されることを特徴とする方法。
- 18.結晶シリコン基板の不均一な面に蒸着導体を付与する方法にして、(a) タコ印刷装置であって、(1)半導体基板の面に付与される蒸着導体の寸法及び 形状に対応する寸法及び形状を有するキャビティがエッチング腐食された上面を 有する板と、(2)可撓性パッドと、(3)半導体基板を解放可能に支持する支 持体であって、前記板に隣接して配置された支持体とを備えるタコ印刷装置を提 供する段階と、 (b)前記不均一な面が露出されるように不均一な面を有する結晶シリコン基板 を前記支持体上に配置する段階と、 (c)前記板の前記キャビティに金属印刷インキを充填する段階と、(d)前記 パッドで前記板に接触し、前記印刷インキが前記パッドに接着するのを許容する 段階と、 (e)前記パッドを動かし、前記基板の不均一な面に係合させ、前記パッドに接 着した前記印刷インキを前記不均一な面に転写し、その上に均一な厚さのインキ パターンを形成する段階とを備えることを特徴とする方法。
- 19.請求の範囲第18項に記載の方法にして、前記段階(e)が、前記印刷パ ターンが前記板の前記キャビティの形状に対応する形状を有するように実行され ることを特徴とする方法。
- 20.請求の範囲第18項に記載の方法にして、前記印刷パターンの厚さが2乃 至4ミルであることを特徴とする方法。
- 21.請求の範囲第18項に記載の方法にして、前記基板の前記不均一な面の1 又は2以上の選択された部分を物理的にマスキングし、前記パッドに接着した印 刷インキが前記面の前記1又は2以上の選択された部分に付与されるのを阻止す る段階を更に備えることを特徴とする方法。
- 22.裏側接点を結晶太陽電池基板に付与する方法にして、(a)タコ印刷装置 であって、(1)選択された形状の第1のキャビティが形成された上面を有する 第1の板であって、前記第1のキャビティ内に配置された複数のランド部を備え 、前記複数のランド部の各々が前記第1の板の前記上面と同一程度に伸長する上 面を有する第1の板と、(2)可撓性パッドと、(3)半導体基板を前記板に対 し固定状態で解放可能に支持する支持体とを備えるタコ印刷装置を提供する段階 と、 (b)表面及び裏面を有する太陽電池基板を提供し、前記裏面が露出されるよう に前記基板を前記支持体上に配置する段階と、(c)前記第1の板の前記第1の キャビティにアルミニウム印刷インキを充填し、前記ランド部の前記上面が前記 インキで被覆されないようにする段階と、(d)前記パッドで前記板に接触し、 前記印刷インキが前記パッドに接着するのを許容する段階と、 (e)前記パッドを動かし、前記基板の前記裏面に接触させ、前記パッド上の前 記印刷インキを前記裏面に転写し、前記選択された形状に適合する形状を有する インキパターンを前記裏面に付与し、前記パターンが複数の穴を備え、前記穴の 各々が前記複数のランド部のそれぞれ1つのランド部に対応する形状及び配置位 置を備えるようにする段階と、 (f)タコ印刷装置であって、(1)前記第1の板の前記ランド部の形状及び位 置に対応する複数の第2のキャビティが形成された第2の板と、(2)可撓性パ ッドと、(3)前記太陽電池基板を解放可能に支持する支持体とを備えるタコ印 刷装置を提供する段階と、 (g)前記裏面が露出されるように、前記太陽電池基板を前記支持体上に配置す る段階と、 (h)前記複数の第2のキャビティにガラスフリットを含む銀印刷インキを充填 する段階と、 (i)前記パッドで前記第2の板に接触し、前記銀印刷インキが前記パッドに接 着するのを許容する段階と、 (j)前記パッドを動かし、前記パターン内の前記複数の穴を通じて露出された 前記基板の前記裏面の前記部分に接触させ、パッドに接着した前記銀インキが前 記基板の前記露出部分に転写されるようにする段階とを備えることを特徴とする 方法。
- 23.請求の範囲第22項に記載の方法にして、前記段階(e)の前、前記裏面 の周縁部分を物理的にマスキングし、前記アルミニウム印刷インキが前記周縁部 分に転写されるのを阻止するようにする段階を更に備えることを特徴とする方法 。
- 24.蒸着インキのパターンを半導体基板の面に付与する方法にして、(a)タ コ印刷装置であって、(1)半導体基板の面に付与される蒸着インキのパターン の寸法及び形状に対応する寸法及び形状を有する少なくとも1つのキャビティが エッチング腐食された上面を有する板と、(2)可撓性パッドと、(3)半導体 基板を解放可能に支持する支持体であって、前記板に隣接しかつ前記板に対し固 定状態に配置された支持体とを構えるタコ印刷装置を提供する段階と、(b)前 記基板の片面が露出されるように、半導体基板を前記支持体上に配置する段階と 、 (c)前記板の前記キャビティに金属印刷インキを充填する段階と、(d)前記 パッドで前記板に接触し、印刷インキが前記パッドに接着するのを許容する段階 と、 (e)前記パッドを動かし、前記基板の前記片面に係合させる段階と、(f)前 記パッドを動かし、前記基板と非接触状態にし、これにより、前記印刷インキが 前記片面に転写されるようにする段階とを備えることを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US561101 | 1983-12-13 | ||
US07/561,101 US5151386A (en) | 1990-08-01 | 1990-08-01 | Method of applying metallized contacts to a solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05502759A true JPH05502759A (ja) | 1993-05-13 |
JP2831130B2 JP2831130B2 (ja) | 1998-12-02 |
Family
ID=24240640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3512445A Expired - Lifetime JP2831130B2 (ja) | 1990-08-01 | 1991-07-01 | 蒸着接点を太陽電池に付与する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5151386A (ja) |
EP (1) | EP0495035B1 (ja) |
JP (1) | JP2831130B2 (ja) |
AU (2) | AU643550B2 (ja) |
CA (1) | CA2065871A1 (ja) |
DE (1) | DE69129185T2 (ja) |
WO (1) | WO1992002952A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004358931A (ja) * | 2003-06-09 | 2004-12-24 | Kanji Maruyama | パッドによるuv印刷システム |
JP2005184025A (ja) * | 2005-02-03 | 2005-07-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2014095937A (ja) * | 2012-11-07 | 2014-05-22 | Toyoda Gosei Co Ltd | タッチパネル装置の製造方法 |
WO2014080894A1 (ja) * | 2012-11-21 | 2014-05-30 | 長州産業株式会社 | 光発電装置 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
US5302224A (en) * | 1992-06-18 | 1994-04-12 | Fashion Nails, Inc. | Method and apparatus for creating images on nails |
US5411897A (en) * | 1994-02-04 | 1995-05-02 | Mobil Solar Energy Corporation | Machine and method for applying solder paste to electronic devices such as solar cells |
US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
US5476553A (en) * | 1994-02-18 | 1995-12-19 | Ase Americas, Inc. | Solar cell modules and method of making same |
US5599046A (en) * | 1994-06-22 | 1997-02-04 | Scientific Games Inc. | Lottery ticket structure with circuit elements |
US5471039A (en) * | 1994-06-22 | 1995-11-28 | Panda Eng. Inc. | Electronic validation machine for documents |
US5475205A (en) * | 1994-06-22 | 1995-12-12 | Scientific Games Inc. | Document verification system |
US5588359A (en) * | 1995-06-09 | 1996-12-31 | Micron Display Technology, Inc. | Method for forming a screen for screen printing a pattern of small closely spaced features onto a substrate |
US5904504A (en) * | 1998-02-19 | 1999-05-18 | Fairchild Semiconductor Corp. | Die attach method and integrated circuit device |
US5988179A (en) | 1998-04-08 | 1999-11-23 | Fashion Nails, Inc. | Method and machine for creating nail art on person's digit |
US5960798A (en) * | 1998-02-26 | 1999-10-05 | Fashion Nails, Inc. | Method and apparatus for creating art on an object such as a person's fingernail or toenail |
US6024099A (en) * | 1998-05-13 | 2000-02-15 | Fashion Nails, Inc. | Apparatus for creating art on an object such as the nail of a person's digit or a golf ball and method for making same |
US6029673A (en) * | 1998-02-26 | 2000-02-29 | Fashion Nails, Inc. | Method and apparatus for creating art on a person's fingernail or toenail |
DE19851703A1 (de) * | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Verfahren zur Herstellung von elektronischen Strukturen |
US6129012A (en) * | 1999-02-03 | 2000-10-10 | Illinois Tool Works Inc. | Ink cups for pad printing machines |
US6641860B1 (en) | 2000-01-03 | 2003-11-04 | T-Ink, L.L.C. | Method of manufacturing printed circuit boards |
EP1321446A1 (de) | 2001-12-20 | 2003-06-25 | RWE Solar GmbH | Verfahren zum Ausbilden einer Schichtstruktur auf einem Substrat |
NO20026107L (no) * | 2001-12-20 | 2003-06-23 | Rwe Schott Solar Gmbh | Fremgangsmåte for dannelse av en sjiktstruktur på et substrat |
US6983688B1 (en) * | 2003-08-26 | 2006-01-10 | The Gem Group, Inc. | Decoration for bags and cases and method for applying the same |
US7686563B2 (en) * | 2007-08-23 | 2010-03-30 | 1708828 Ontario Ltd. O/A Horst Welding | Coupling apparatus for releasably coupling hydraulically powered work implements to a work vehicle |
US7927976B2 (en) * | 2008-07-23 | 2011-04-19 | Semprius, Inc. | Reinforced composite stamp for dry transfer printing of semiconductor elements |
US8506867B2 (en) * | 2008-11-19 | 2013-08-13 | Semprius, Inc. | Printing semiconductor elements by shear-assisted elastomeric stamp transfer |
WO2010129325A2 (en) | 2009-04-28 | 2010-11-11 | 7Solar Technologies, Inc. | Backskin material for solar energy modules |
US7910393B2 (en) * | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
DE102009026027B4 (de) * | 2009-06-24 | 2013-05-29 | Hanwha Q.CELLS GmbH | Wafersolarzelle |
US8261660B2 (en) * | 2009-07-22 | 2012-09-11 | Semprius, Inc. | Vacuum coupled tool apparatus for dry transfer printing semiconductor elements |
DE102010006329A1 (de) * | 2010-01-29 | 2011-08-04 | RENA GmbH, 78148 | Verwendung einer Auftragswalze zum strukturierten Auftragen eines Ätz- oder Dotiermediums sowie Auftragswalze |
CN101880914B (zh) * | 2010-05-25 | 2012-09-12 | 中国科学院微电子研究所 | 利用等离子体浸没离子注入制备黑硅的方法 |
US20140021400A1 (en) * | 2010-12-15 | 2014-01-23 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
KR20120073615A (ko) * | 2010-12-27 | 2012-07-05 | 삼성전자주식회사 | 국소 영역 인쇄장치 및 방법 |
ITUD20110171A1 (it) * | 2011-10-24 | 2013-04-25 | Applied Materials Italia Srl | Metodo ed impianto di controllo in retroazione ad anello chiuso per la stampa di uno schema multistrato |
US10132453B2 (en) | 2016-08-23 | 2018-11-20 | Orsam Sylvania Inc. | Flexible light engine with bus bars and interconnectors |
FR3084663B1 (fr) * | 2018-07-31 | 2020-07-17 | Saint-Gobain Glass France | Procede et installation de primage de vitrage par tampographie mettant en oeuvre un solvant a base d'eau. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58502078A (ja) * | 1981-12-10 | 1983-12-01 | ベルギ−国 | 半導体装置の製造方法およびそうして得られる半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2959502A (en) * | 1959-09-01 | 1960-11-08 | Wolfgang W Gaertner | Fabrication of semiconductor devices |
GB1196201A (en) * | 1967-09-19 | 1970-06-24 | Tokyo Shibaura Electric Co | A method of Printing Electrical Circuits onto Substrates |
DE2534845A1 (de) * | 1975-08-05 | 1977-02-10 | Schering Ag | Druckverfahren und dafuer geeignete schmelzdruckfarben |
US4019436A (en) * | 1976-06-16 | 1977-04-26 | Martin Handweiler | Technique for producing a pre-distorted design format for use in transfer printing |
FR2412164A1 (fr) * | 1977-12-13 | 1979-07-13 | Radiotechnique Compelec | Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede |
US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
GB2078762B (en) * | 1980-06-23 | 1984-06-27 | Ici Ltd | Printing compositions and process |
DE3328869A1 (de) * | 1983-08-10 | 1985-02-28 | Nukem Gmbh, 6450 Hanau | Photovoltaische zelle und verfahren zum herstellen dieser |
JPS6249676A (ja) * | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
US4865999A (en) * | 1987-07-08 | 1989-09-12 | Glasstech Solar, Inc. | Solar cell fabrication method |
-
1990
- 1990-08-01 US US07/561,101 patent/US5151386A/en not_active Expired - Lifetime
-
1991
- 1991-07-01 WO PCT/US1991/004670 patent/WO1992002952A1/en active IP Right Grant
- 1991-07-01 EP EP91913335A patent/EP0495035B1/en not_active Expired - Lifetime
- 1991-07-01 DE DE69129185T patent/DE69129185T2/de not_active Expired - Lifetime
- 1991-07-01 CA CA002065871A patent/CA2065871A1/en not_active Abandoned
- 1991-07-01 AU AU82286/91A patent/AU643550B2/en not_active Expired
- 1991-07-01 JP JP3512445A patent/JP2831130B2/ja not_active Expired - Lifetime
-
1993
- 1993-11-08 AU AU50501/93A patent/AU5050193A/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58502078A (ja) * | 1981-12-10 | 1983-12-01 | ベルギ−国 | 半導体装置の製造方法およびそうして得られる半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004358931A (ja) * | 2003-06-09 | 2004-12-24 | Kanji Maruyama | パッドによるuv印刷システム |
JP2005184025A (ja) * | 2005-02-03 | 2005-07-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2014095937A (ja) * | 2012-11-07 | 2014-05-22 | Toyoda Gosei Co Ltd | タッチパネル装置の製造方法 |
WO2014080894A1 (ja) * | 2012-11-21 | 2014-05-30 | 長州産業株式会社 | 光発電装置 |
JP2014103301A (ja) * | 2012-11-21 | 2014-06-05 | Choshu Industry Co Ltd | 光発電装置 |
Also Published As
Publication number | Publication date |
---|---|
DE69129185T2 (de) | 1998-10-22 |
JP2831130B2 (ja) | 1998-12-02 |
EP0495035A4 (en) | 1993-10-20 |
EP0495035B1 (en) | 1998-04-01 |
EP0495035A1 (en) | 1992-07-22 |
AU643550B2 (en) | 1993-11-18 |
AU8228691A (en) | 1992-03-02 |
AU5050193A (en) | 1994-01-13 |
DE69129185D1 (de) | 1998-05-07 |
CA2065871A1 (en) | 1992-02-02 |
WO1992002952A1 (en) | 1992-02-20 |
US5151386A (en) | 1992-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH05502759A (ja) | 蒸着接点を太陽電池に付与する方法 | |
KR101028479B1 (ko) | 회로기판용 부재, 회로기판의 제조방법 및 회로기판의제조장치 | |
US3950200A (en) | Method of fabricating thermal printing head | |
CN100579333C (zh) | 电路基板用部件、电路基板的制造方法及电路基板的制造装置 | |
US5312643A (en) | Method of producing a transparent conductive film provided with supplementary metal lines | |
JPS608426Y2 (ja) | 半導体ウエハ−の保持基板 | |
KR101063041B1 (ko) | 미세회로 필름기판 및 제조방법 | |
US10675888B1 (en) | Method for manufacturing thermal print head | |
CN116033670A (zh) | 一种新的电路板阻焊绝缘层制作工艺 | |
TWI716300B (zh) | 熱印頭之製造方法 | |
EP4211725B1 (en) | Method of deposition on a substrate used for the manufacture of a solar cell, screen for screen printing on a substrate, processing line for processing a substrate | |
JP2634724B2 (ja) | 厚膜形成方法 | |
JP2606416B2 (ja) | 絶縁基板表面への抵抗体層形成方法および金属有機物抵抗体フィルム | |
JPH0697711B2 (ja) | セラミツク回路基板の製造方法 | |
JP2658953B2 (ja) | レジストベーキング装置 | |
JP2003258409A (ja) | 被パターン形成物およびそのパターン形成方法 | |
KR20230170173A (ko) | 이형특성이 향상된 전사필름의 제조 방법, 상기 방법에 따라 제조된 전사필름, 및 상기 전사필름을 이용한 소자의 전사 방법 | |
JP2731059B2 (ja) | 発熱体形成基板上のグレーズ層の形成法およびサーマルヘッド基板 | |
CN114822248A (zh) | 一种显示面板的制作方法及显示面板 | |
JPH09193435A (ja) | 平面型グレーズ基板の製造方法 | |
JP2001063115A (ja) | サーマルヘッドの製造方法 | |
JPH09142970A (ja) | ガラス被覆層の形成方法 | |
JPH02130155A (ja) | サーマルヘッド用グレーズドセラミック基板の製法 | |
JPS6227555B2 (ja) | ||
JPS6360541A (ja) | 転写バンプ用基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080925 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090925 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090925 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100925 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100925 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110925 Year of fee payment: 13 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110925 Year of fee payment: 13 |