JPS5845830B2 - 集積回路とその製法 - Google Patents

集積回路とその製法

Info

Publication number
JPS5845830B2
JPS5845830B2 JP51018538A JP1853876A JPS5845830B2 JP S5845830 B2 JPS5845830 B2 JP S5845830B2 JP 51018538 A JP51018538 A JP 51018538A JP 1853876 A JP1853876 A JP 1853876A JP S5845830 B2 JPS5845830 B2 JP S5845830B2
Authority
JP
Japan
Prior art keywords
region
substrate
power device
integrated circuit
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51018538A
Other languages
English (en)
Japanese (ja)
Other versions
JPS51109784A (enExample
Inventor
アーマンド・パスクウエル・フエロ
スリンダー・クリシユナ
ブルーノ・クルズ
マヌエル・ルイズ・トレノ・ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS51109784A publication Critical patent/JPS51109784A/ja
Publication of JPS5845830B2 publication Critical patent/JPS5845830B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/103Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP51018538A 1975-02-25 1976-02-24 集積回路とその製法 Expired JPS5845830B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55295275A 1975-02-25 1975-02-25

Publications (2)

Publication Number Publication Date
JPS51109784A JPS51109784A (enExample) 1976-09-28
JPS5845830B2 true JPS5845830B2 (ja) 1983-10-12

Family

ID=24207504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51018538A Expired JPS5845830B2 (ja) 1975-02-25 1976-02-24 集積回路とその製法

Country Status (2)

Country Link
JP (1) JPS5845830B2 (enExample)
NL (1) NL7601442A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11580674B2 (en) 2019-09-25 2023-02-14 Jvckenwood Corporation Information distribution apparatus, information generation method, and information generation program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11580674B2 (en) 2019-09-25 2023-02-14 Jvckenwood Corporation Information distribution apparatus, information generation method, and information generation program

Also Published As

Publication number Publication date
NL7601442A (en) 1976-08-27
JPS51109784A (enExample) 1976-09-28

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