JPS5844725A - 半導体シリコン基板の製造方法 - Google Patents
半導体シリコン基板の製造方法Info
- Publication number
- JPS5844725A JPS5844725A JP14233581A JP14233581A JPS5844725A JP S5844725 A JPS5844725 A JP S5844725A JP 14233581 A JP14233581 A JP 14233581A JP 14233581 A JP14233581 A JP 14233581A JP S5844725 A JPS5844725 A JP S5844725A
- Authority
- JP
- Japan
- Prior art keywords
- hold time
- wafer
- silicon substrate
- mirror
- finished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 14
- 229910052710 silicon Inorganic materials 0.000 title claims description 14
- 239000010703 silicon Substances 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims description 18
- 239000002344 surface layer Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 230000002950 deficient Effects 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 23
- 239000013078 crystal Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14233581A JPS5844725A (ja) | 1981-09-11 | 1981-09-11 | 半導体シリコン基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14233581A JPS5844725A (ja) | 1981-09-11 | 1981-09-11 | 半導体シリコン基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844725A true JPS5844725A (ja) | 1983-03-15 |
| JPH0319687B2 JPH0319687B2 (enrdf_load_stackoverflow) | 1991-03-15 |
Family
ID=15312958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14233581A Granted JPS5844725A (ja) | 1981-09-11 | 1981-09-11 | 半導体シリコン基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5844725A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0313544A (ja) * | 1989-06-09 | 1991-01-22 | Nippon Steel Corp | 高Ｍｎ非磁性鉄筋棒鋼の製造方法 |
| JPH03295235A (ja) * | 1990-04-12 | 1991-12-26 | Toshiba Corp | エピタキシャルウェーハの製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010016586A1 (ja) | 2008-08-08 | 2010-02-11 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェーハの製造方法 |
-
1981
- 1981-09-11 JP JP14233581A patent/JPS5844725A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0313544A (ja) * | 1989-06-09 | 1991-01-22 | Nippon Steel Corp | 高Ｍｎ非磁性鉄筋棒鋼の製造方法 |
| JPH03295235A (ja) * | 1990-04-12 | 1991-12-26 | Toshiba Corp | エピタキシャルウェーハの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319687B2 (enrdf_load_stackoverflow) | 1991-03-15 |
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