JPH0319688B2 - - Google Patents

Info

Publication number
JPH0319688B2
JPH0319688B2 JP9927082A JP9927082A JPH0319688B2 JP H0319688 B2 JPH0319688 B2 JP H0319688B2 JP 9927082 A JP9927082 A JP 9927082A JP 9927082 A JP9927082 A JP 9927082A JP H0319688 B2 JPH0319688 B2 JP H0319688B2
Authority
JP
Japan
Prior art keywords
mirror
bsd
wafer
hold time
surface layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9927082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58216425A (ja
Inventor
Nobuyuki Akyama
Mitsuo Kono
Ryusuke Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP9927082A priority Critical patent/JPS58216425A/ja
Publication of JPS58216425A publication Critical patent/JPS58216425A/ja
Publication of JPH0319688B2 publication Critical patent/JPH0319688B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Formation Of Insulating Films (AREA)
JP9927082A 1982-06-11 1982-06-11 半導体シリコン基板の製造方法 Granted JPS58216425A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9927082A JPS58216425A (ja) 1982-06-11 1982-06-11 半導体シリコン基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9927082A JPS58216425A (ja) 1982-06-11 1982-06-11 半導体シリコン基板の製造方法

Publications (2)

Publication Number Publication Date
JPS58216425A JPS58216425A (ja) 1983-12-16
JPH0319688B2 true JPH0319688B2 (enrdf_load_stackoverflow) 1991-03-15

Family

ID=14242988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9927082A Granted JPS58216425A (ja) 1982-06-11 1982-06-11 半導体シリコン基板の製造方法

Country Status (1)

Country Link
JP (1) JPS58216425A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238629A (ja) * 1986-04-09 1987-10-19 Nec Corp 半導体基板の製造方法
JPH01244621A (ja) * 1988-03-25 1989-09-29 Shin Etsu Handotai Co Ltd シリコン単結晶基板の表面清浄化方法
JPH0222823A (ja) * 1988-07-11 1990-01-25 Toshiba Corp シリコン基板の製造方法

Also Published As

Publication number Publication date
JPS58216425A (ja) 1983-12-16

Similar Documents

Publication Publication Date Title
US7763541B2 (en) Process for regenerating layer transferred wafer
US6376335B1 (en) Semiconductor wafer manufacturing process
US4608095A (en) Gettering
US4042419A (en) Process for the removal of specific crystal structure defects from semiconductor discs and the product thereof
JP3085184B2 (ja) Ｓｏｉ基板及びその製造方法
JPH0845944A (ja) シリコンウェーハの製造方法
US20090203212A1 (en) Surface Grinding Method and Manufacturing Method for Semiconductor Wafer
JPH0319688B2 (enrdf_load_stackoverflow)
JPH05326467A (ja) 半導体基板及びその製造方法
JPH0561240B2 (enrdf_load_stackoverflow)
JP3177937B2 (ja) 半導体シリコンウェーハの製造方法
JP4259881B2 (ja) シリコンウエハの清浄化方法
JPS5933972B2 (ja) シリコン基板の製造方法
JPS63129633A (ja) 半導体表面処理方法
JPS5885534A (ja) 半導体シリコン基板の製造法
JPH1116844A (ja) エピタキシャルシリコンウェーハの製造方法と素材用ウェーハ
JPH0319687B2 (enrdf_load_stackoverflow)
CN112059736A (zh) 一种硅片制造工艺
JPS61240638A (ja) 半導体装置の製法
JP2004221435A (ja) 半導体ウエーハの製造方法及び半導体ウエーハ
JP3386083B2 (ja) シリコンウエーハの処理方法
JP3359434B2 (ja) エピタキシャルウェーハの製造方法
JP3238957B2 (ja) シリコンウェーハ
JPH0319686B2 (enrdf_load_stackoverflow)
JPS61154134A (ja) 半導体装置の製造方法