JPH0319686B2 - - Google Patents

Info

Publication number
JPH0319686B2
JPH0319686B2 JP14233481A JP14233481A JPH0319686B2 JP H0319686 B2 JPH0319686 B2 JP H0319686B2 JP 14233481 A JP14233481 A JP 14233481A JP 14233481 A JP14233481 A JP 14233481A JP H0319686 B2 JPH0319686 B2 JP H0319686B2
Authority
JP
Japan
Prior art keywords
hold time
wafers
mirror
heat treatment
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14233481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5844724A (ja
Inventor
Nobuyuki Akyama
Mitsuo Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP14233481A priority Critical patent/JPS5844724A/ja
Publication of JPS5844724A publication Critical patent/JPS5844724A/ja
Publication of JPH0319686B2 publication Critical patent/JPH0319686B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP14233481A 1981-09-11 1981-09-11 シリコン基板の製造方法 Granted JPS5844724A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14233481A JPS5844724A (ja) 1981-09-11 1981-09-11 シリコン基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14233481A JPS5844724A (ja) 1981-09-11 1981-09-11 シリコン基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5844724A JPS5844724A (ja) 1983-03-15
JPH0319686B2 true JPH0319686B2 (enrdf_load_stackoverflow) 1991-03-15

Family

ID=15312932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14233481A Granted JPS5844724A (ja) 1981-09-11 1981-09-11 シリコン基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5844724A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5844724A (ja) 1983-03-15

Similar Documents

Publication Publication Date Title
US3923567A (en) Method of reclaiming a semiconductor wafer
KR940016544A (ko) 반도체기판의 작성방법 및 고체촬상장치의 제조방법
KR20060040733A (ko) 웨이퍼의 제조방법
JP2742247B2 (ja) シリコン単結晶基板の製造方法および品質管理方法
JPS63227026A (ja) シリコン結晶基板のゲツタリング方法
JPS60247935A (ja) 半導体ウエハの製造方法
JPH0319686B2 (enrdf_load_stackoverflow)
JPH0319687B2 (enrdf_load_stackoverflow)
JPH05326467A (ja) 半導体基板及びその製造方法
JPH0561240B2 (enrdf_load_stackoverflow)
JPH0319688B2 (enrdf_load_stackoverflow)
JP2000269221A (ja) シリコン基板の熱処理方法および熱処理された基板、その基板を用いたエピタキシャルウェーハ
JP2725460B2 (ja) エピタキシャルウェハーの製造方法
JPH039078B2 (enrdf_load_stackoverflow)
JPS63198334A (ja) 半導体シリコンウエ−ハの製造方法
JPS5885534A (ja) 半導体シリコン基板の製造法
JPS6326541B2 (enrdf_load_stackoverflow)
JPS5818929A (ja) 半導体装置の製造方法
KR100312971B1 (ko) 실리콘 웨이퍼내의 산소 불순물 농도 감소방법
JPS5854497B2 (ja) 半導体基板の内部欠陥によるゲッタリング効果を増大させる方法
JP3238957B2 (ja) シリコンウェーハ
JP2004221435A (ja) 半導体ウエーハの製造方法及び半導体ウエーハ
JPS60176241A (ja) 半導体基板の製造方法
JPH0318330B2 (enrdf_load_stackoverflow)
JP2639470B2 (ja) GaAs単結晶のウエハの製造方法