JPS58216425A - 半導体シリコン基板の製造方法 - Google Patents
半導体シリコン基板の製造方法Info
- Publication number
- JPS58216425A JPS58216425A JP9927082A JP9927082A JPS58216425A JP S58216425 A JPS58216425 A JP S58216425A JP 9927082 A JP9927082 A JP 9927082A JP 9927082 A JP9927082 A JP 9927082A JP S58216425 A JPS58216425 A JP S58216425A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- wafer
- bsd
- oxygen
- hold time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 11
- 229910052710 silicon Inorganic materials 0.000 title claims description 11
- 239000010703 silicon Substances 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000002344 surface layer Substances 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000005498 polishing Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005507 spraying Methods 0.000 abstract description 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9927082A JPS58216425A (ja) | 1982-06-11 | 1982-06-11 | 半導体シリコン基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9927082A JPS58216425A (ja) | 1982-06-11 | 1982-06-11 | 半導体シリコン基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58216425A true JPS58216425A (ja) | 1983-12-16 |
| JPH0319688B2 JPH0319688B2 (enrdf_load_stackoverflow) | 1991-03-15 |
Family
ID=14242988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9927082A Granted JPS58216425A (ja) | 1982-06-11 | 1982-06-11 | 半導体シリコン基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58216425A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238629A (ja) * | 1986-04-09 | 1987-10-19 | Nec Corp | 半導体基板の製造方法 |
| JPH01244621A (ja) * | 1988-03-25 | 1989-09-29 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の表面清浄化方法 |
| JPH0222823A (ja) * | 1988-07-11 | 1990-01-25 | Toshiba Corp | シリコン基板の製造方法 |
-
1982
- 1982-06-11 JP JP9927082A patent/JPS58216425A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238629A (ja) * | 1986-04-09 | 1987-10-19 | Nec Corp | 半導体基板の製造方法 |
| JPH01244621A (ja) * | 1988-03-25 | 1989-09-29 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の表面清浄化方法 |
| JPH0222823A (ja) * | 1988-07-11 | 1990-01-25 | Toshiba Corp | シリコン基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319688B2 (enrdf_load_stackoverflow) | 1991-03-15 |
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